Science China Materials, Journal Year: 2024, Volume and Issue: unknown
Published: Nov. 28, 2024
Language: Английский
Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown
Published: Jan. 30, 2025
Abstract Short‐wave infrared (SWIR) organic photodetectors (OPDs) offer flexibility, cost‐effectiveness, and tunable properties that differentiate them from commercially inorganic SWIR photodetectors. These detectors mainly rely on materials possessing absorption properties. However, the synthesis of new semiconductor with narrow band gaps remains a significant challenge. Here an effective general strategy blending TMBP‐F 4 TCNQ (TMF4) cocrystal PDVT‐10 polymer as SWIR‐absorbing for photoelectronic detection is reported. As prepared field‐effect transistor (FET) device Si/SiO 2 /PDVT‐10:TMF4 (PTF)/Au configuration presents hole mobility up to 1.70 cm V −1 s spectral response range 1000–1700 nm. Surprisingly, remarkable photoresponsivity (R, 801 A W ) detectivity (D*, 1.6 × 10 13 Jones) are obtained at 1060 The PTF film exhibits high surface potential 180 mV, ultrafast transfer within 150 fs when exposed 1350 nm pump laser. existence mobile electrons in TMF4 photogeneration additional carriers upon illumination may create (photo)doping effect allows higher concentration PDVT‐10. Significantly, this enhances detection, therefore showing great prospects field imaging.
Language: Английский
Citations
1
Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown
Published: Feb. 16, 2025
Abstract The growing importance of high‐speed and energy‐efficient photodetectors in broadband communication has sparked widespread interest organic materials owing to their tunable optical characteristics ease production. However, this Schottky‐type photodetector (OPD) low detectivity a high dark current, requiring additional voltage biasing. Herein, the development highly sensitive self‐powered OPD with metal‐semiconductor‐insulator‐metal (MSIM) structure (ITO/PEDOT:PSS/Organic photoactive layer/dielectric/silver) is presented, using polymer PM6, acceptor Y6, its blend parylene as dielectric layer for spectral detection spanning visible near‐infrared (NIR) range at speeds. Such new class devices can produce fast transient photocurrent signals opposite polarity both under light ON/OFF cycles response pulsed stimuli, which makes inherently more distinguishable. detailed measurements are performed fabricated MSIM different illumination conditions various operational frequencies, PM6:Y6‐based found be most compared single‐component due increased charge generation accumulation without Further, faster time (≈nanosecond) positive negative peaks remarkably cutoff frequency 5.6 MHz outperformed state‐of‐the‐art OPD. extraordinary performance demonstrated by real‐time NIR ASCII codes suggests potential infrared communication. signal offers novel platform next‐generation transient‐type photodetectors, enhancing need biasing across wide applications.
Language: Английский
Citations
1
Small, Journal Year: 2025, Volume and Issue: unknown
Published: Feb. 11, 2025
Abstract Organic photodetectors (OPDs) offer significant advantages in biomedical applications, including medical imaging, heart rate monitoring, and tumor therapy. Despite advancements OPD technology, the efficiency of these devices short‐wave infrared (SWIR) region remains considerably lower than that inorganic semiconductors. To tackle this challenge, study developed an ultra‐narrow bandgap acceptor CS‐1, featuring A‐D‐A 1 ‐D‐A structure where benzobisthiadiazole (BBT) serves as electron‐deficient unit A , which exhibits a wide absorption range from 300 to 1550 nm. This molecular design not only enhances properties material but also improves overall performance device. It is worth noting optimal PTB7‐Th:CS‐1 device realizes specific detectivity (D n * ) 2.96 × 10 Jones at 1.30 µm, making it one most efficient wavelength date. Additionally, demonstrates high linear dynamic (LDR) 91.9 dB even 1300 These results indicate significantly detection SWIR region, surpassing commercially available silicon‐based photodetectors. highlights potential BBT for achieving high‐performance OPDs.
Language: Английский
Citations
0
ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown
Published: Feb. 11, 2025
Language: Английский
Citations
0
Small, Journal Year: 2025, Volume and Issue: unknown
Published: April 7, 2025
Abstract Fingerprint‐on‐display (FoD) sensors utilizing organic photodetectors (OPDs) are nearing commercialization, making it crucial to develop novel conjugated polymers that can be used as the active layer for this technology. These should meet several requirements in terms of patent rights, large‐scale synthesis, and OPD performance. In study, containing electron‐withdrawing building blocks, easily synthesized from a 2‐aminothiazole‐4‐carboxylate Schiff base commonly pharmaceutical intermediate, developed high‐performance OPDs FoD sensors. Through alkyl chain engineering polymers, highest photocurrent density lowest dark current values were achieved OPDs. This resulted best performance with promising responsivity 0.42 A/W specific detectivity 2.6 × 10 13 Jones at −2 V under near‐infrared irradiation (810 nm). addition, they exhibited excellent rising response time 3–4 µs, falling 6–11 −3 dB cut‐off frequency 80–100 kHz. Finally, is integrated into an thin‐film transistor array build sensor 80 µm 2 pixels, resulting successful acquisition digital fingerprint image.
Language: Английский
Citations
0
Nano Letters, Journal Year: 2025, Volume and Issue: unknown
Published: April 14, 2025
To overcome the limitations inherent in traditional silicon (Si)-based photodetectors, particularly low light absorption and complex carrier dynamics, this study proposes fabricates situ three-dimensional (3D) graphene/Si Schottky junctions integrated with WS2 quantum dots (QDs). The introduction of QDs enables heterojunction to realize "double-enhanced absorption" by synergistic effect natural nanoresonant cavity surface plasmon resonance (LSPR) QDs. Photodetectors constructed from QDs/3D-graphene/Si demonstrate a broadband, self-powered response 440 1850 nm, maintaining stable operation at 1550 nm for 4 months. They exhibit high-frequency modulation (2 kHz), responsivity up 83 A/W, specific detectivity 5.6 × 1011 Jones, rapid response/recovery times 139 μs/145 μs multifunctionality image acquisition, information encryption, logic operations. This research lays foundation high-performance, photodetectors light-controlled circuits communications imaging.
Language: Английский
Citations
0
ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown
Published: April 30, 2025
Short-wavelength infrared organic photodetectors (SWIR OPDs) have great potential for applications in health monitoring, night vision, optical communication, and image sensing. However, the development of SWIR OPDs is limited by challenges achieving high responsivity (R) detectivity (D*) due to exponentially increased nonradiative recombination rate when decreasing bandgap conjugated polymers or molecules. In this study, we designed synthesized a series donor-acceptor (D-A) type ultralow (≤0.85 eV) containing [1,2,5]thiadiazolo[3,4-g]quinoxaline (TQ) units as A unit selenophene D unit, respectively. The solubility, molecular stacking, charge transport properties, film morphology were finely tuned varying side chain lengths on substituted phenyl groups TQ units. It was found that polymer PTQOD with 2-octyldodecyl alkyl chains has lower losses trap state density. After device optimization, PTQOD-based achieved higher R dark current density (Jd), resulting D* 1.06 × 1010 Jones at 1300 nm under 0 V bias, representing highest value using TQ-based polymers. This work highlights importance optimizing ultralow-band gap donor materials provides promising approach developing highly sensitive OPDs.
Language: Английский
Citations
0
Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown
Published: March 6, 2025
Abstract Typical organic cathode interlayer (CIL) materials for solution‐processed optoelectronic devices usually have polar side chains or polar/ionic groups, making them hydrophilic and thus limiting device stability. This manuscript reports a novel CIL material based on an n‐type polythiophene backbone with semifluoroalkyl (n‐PT11) developing high‐performance photodetectors (OPDs) excellent The of n‐PT11 has low‐lying LUMO/HOMO energy level −4.27 eV/−6.21 eV, suppressing reversed hole injection. enable processing 1,1,1,3,3,3‐hexafluoro‐2‐propanol (HFIP) fabricating multilayer OPDs exhibit low trap density dark current ( J d ). As result, n‐PT11‐based near‐infrared (NIR) ultra‐low 1.00 × 10 −9 A cm −2 high specific detectivity D * ) 3.06 12 Hz 1/2 W −1 at V, which is among the highest values reported so far NIR OPDs. Most importantly, hydrophobicity allows OPD unprecedented air stability, unencapsulated retaining 94% their initial responsiveness after 2000 h in ambient conditions. To best knowledge, this first report conjugated polymers as CILs
Language: Английский
Citations
0
Carbon Energy, Journal Year: 2025, Volume and Issue: unknown
Published: April 1, 2025
ABSTRACT Visible and near‐infrared photodetectors are widely used in intelligent driving, health monitoring, other fields. However, the application of region is significantly impacted by high dark current, which can greatly reduce their performance sensitivity, thereby limiting effectiveness certain applications. In this work, introduction a C 60 back interface layer successfully mitigated reactions to decrease thickness Mo(S,Se) 2 layer, tailoring back‐contact barrier preventing reverse charge injection, resulting kesterite photodetector with an ultralow current density 5.2 × 10 −9 mA/cm ultra‐weak‐light detection at levels as low 25 pW/cm . Besides, under self‐powered operation, it demonstrates outstanding performance, achieving peak responsivity 0.68 A/W, wide response range spanning from 300 1600 nm, impressive detectivity 5.27 14 Jones. addition, offers exceptionally rapid times, rise decay times 70 650 ns, respectively. This research important insights for developing high‐performance that have responsivity, current.
Language: Английский
Citations
0
Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown
Published: April 7, 2025
Abstract Photomultiplication‐type organic photodetectors (PM‐OPDs) are highly effective for detecting weak optical signals; however, achieving a balance between high gain, broad spectral sensitivity, fast response, and low operating voltage remains significant challenge. In this study, solution‐processed approach utilizing tailored non‐fullerene acceptors (NFAs) is presented to enhance electron trapping enable efficient photomultiplication. Two NFAs, BFDO‐Eh‐4F BPDO‐Eh‐4F, with distinct LUMO levels, synthesized incorporated as dopants. Devices incorporating demonstrated an exceptional external quantum efficiency (EQE) of 2500% at 2 V bias rapid response time 420 µs, attributed its deeper level that facilitates trapping. Conversely, BPDO‐Eh‐4F‐based devices operated in photovoltaic (PV) mode due weaker arising from shallower level, dark current specific detectivity ( D *) 4.5 × 10¹ Jones. These findings elucidate the role unbalanced charge transport holes electrons enhancing PM‐OPD performance highlight critical influence offsets optimizing The complementary advantages these position them promising candidates applications imaging, communication biosensing, providing clear pathway development next‐generation OPDs balanced performance.
Language: Английский
Citations
0