Emerging 2D Ferroelectric Devices for In‐Sensor and In‐Memory Computing

Advanced Materials, Journal Year: 2024, Volume and Issue: unknown

Published: May 13, 2024

Abstract The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. presence a bottleneck data transmission between sensors, computing, and memory units obstructs system's efficiency speed. To minimize latency units, novel in‐memory in‐sensor architectures are proposed as alternatives to conventional von Neumann architecture, aiming for data‐intensive applications. integration 2D materials ferroelectric has been expected build these due dangling‐bond‐free surface, ultra‐fast polarization flipping, ultra‐low power consumption ferroelectrics. Here, recent progress devices in‐sensing neuromorphic reviewed. Experimental theoretical progresses on devices, including passive ferroelectrics‐integrated active reviewed followed by perception, memory, application. Notably, have used simulate synaptic weights, neuronal model functions, neural networks image processing. As an emerging device configuration, potential expand into sensor‐memory application field, leading new possibilities modern electronics.

Language: Английский

---

New-Generation Ferroelectric AlScN Materials

Nano-Micro Letters, Journal Year: 2024, Volume and Issue: 16(1)

Published: June 25, 2024

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric manner. However, complementary metal oxide semiconductor compatibility and uniformity ferroelectric performance after size scaling always been two thorny issues hindering practical application devices. The emerging ferroelectricity wurtzite structure nitride offers opportunities circumvent dilemma. This review covers mechanism domain dynamics AlScN films. optimization films grown different techniques is summarized their applications for memories in-memory computing are illustrated. Finally, challenges perspectives regarding commercial avenue discussed.

Language: Английский

---

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 2, 2025

Abstract Ferroelectrics are considered to be promising candidates for highly energy‐efficient electronic devices in future information technologies owing their nonvolatile and low‐energy operation of spontaneous electric polarization. Driven by the pervasive growing demands miniaturization energy efficiency nanoelectronics, further reductions operating voltage ferroelectric‐based dispensable thus have received immense attentions. Recent remarkable advances atomic‐scale synthesis, cutting‐edge characterizations, multiscale theoretical calculations ferroelectrics gained unprecedented insights into manipulation emergent functionalities multiple length scales, which helps discovery nontrivial polar structures designs device architectures toward promise ultralow‐power consumption. Here, state‐of‐the‐art strategies reducing ferroelectric materials reviewed. This article starts with a brief introduction major achievements ferroelectrics, expounds on techniques probe polarization‐switching process. Moreover, this focuses predominantly recent advancements achieving low voltages through various prevalent such as thickness scaling, defect engineering, chemical doping, surface interfacial design, strain engineering. Finally, perspectives scientific technical challenges discussed, aiming facilitate applications technologies.

Language: Английский

---

Object Motion Detection Enabled by Reconfigurable Neuromorphic Vision Sensor under Ferroelectric Modulation

ACS Nano, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 26, 2024

Increasing the demand for object motion detection (OMD) requires shifts of reducing redundancy, heightened power efficiency, and precise programming capabilities to ensure consistency accuracy. Drawing inspiration from motion-sensitive ganglion cells, we propose an OMD vision sensor with a simple device structure WSe

Language: Английский

---

Ferroelectricity-Defects Synergistic Artificial Synapses for High Recognition Accuracy Neuromorphic Computing

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(15), P. 19235 - 19246

Published: April 8, 2024

The ability of ferroelectric memristors to modulate conductance and offer multilevel storage has garnered significant attention in the realm artificial synapses. On one hand, resistance change mainly depends on polarization reversal. other defects such as oxygen vacancies, which are inevitable presence during high-temperature processes, can undergo diffusion drift with reversal, thereby interface potential barrier. Thus, it is both desirable necessary investigate synergistic effect ferroelectricity defects. Here, we prepare BaTiO3 memristor by pulse laser deposition achieve switching through vacancies. shows excellent characteristics a large ratio (104) good stability (103 s). It effectively emulates features synapses accomplishes decimal logical neural computing. In neuromorphic system crafted memristor, recognition accuracy 28 × pixel image reaches 94.9%. These findings strongly support research devices.

Language: Английский

---

Conductive filament formation in the failure of Hf0.5Zr0.5O2 ferroelectric capacitors

APL Materials, Journal Year: 2025, Volume and Issue: 13(1)

Published: Jan. 1, 2025

Ferroelectric materials provide pathways to higher performance logic and memory technologies, with Hf0.5Zr0.5O2 being the most popular among them. However, critical challenges exist in understanding material’s failure mechanisms design long endurance lifetimes. In this work, dielectric due repeated switching cycles, occurring through oxygen vacancy motion leading formation of a conductive filament, is demonstrated. A field modified hopping barrier ∼150–400 meV observed, indicating charge 0.4–0.6e markedly different from states predicted literature. After failure, capacitor leakage current high (∼25 mA) constant area, consistent filament formation. Conductive atomic force microscopy measurements distribution simulations suggest local mechanism along boundary island an enhanced electric field.

Language: Английский

---

Self‐Powered Artificial Neuron Devices: Towards the All‐In‐One Perception and Computation System

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 18, 2025

Abstract The increasing demand for energy supply in sensing units and the computational efficiency of computation has prompted researchers to explore novel, integrated technology that offers high low consumption. Self‐powered enables environmental perception without external sources, while neuromorphic provides energy‐efficient high‐performance computing capabilities. integration self‐powered presents a promising solution an all‐in‐one system. This review examines recent developments advancements artificial neuron devices based on triboelectric, piezoelectric, photoelectric effects, focusing their structures, mechanisms, functions. Furthermore, it compares electrical characteristics various types discusses effective methods enhancing performance. Additionally, this comprehensive summary systems, encompassing tactile, visual, auditory systems. Moreover, elucidates recently systems combine perception, computing, actuation into configurations, aspiring realize closed‐loop control. seamless holds significant potential shaping more intelligent future humanity.

Language: Английский

---

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Nature Communications, Journal Year: 2024, Volume and Issue: 15(1)

Published: Nov. 9, 2024

The burgeoning interest in two-dimensional semiconductors stems from their potential as ultrathin platforms for next-generation transistors. Nonetheless, there persist formidable challenges fully obtaining high-performance complementary logic components and the underlying mechanisms polarity modulation of transistors are not yet understood. Here, we exploit both ferroelectric domain-based nonvolatile Fermi level transitional metal dichalcogenides (MoS

Language: Английский

---

Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches

ACS Applied Electronic Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 16, 2024

The integration of ferroelectric hafnium oxide (HfO2) into semiconductor device structures has been a breakthrough in the development state-of-the-art in-memory computing (IMC) technology. high compatibility HfO2 with backend-of-the-line (BEOL) as well conventional complementary metal-oxide-semiconductor (CMOS) process technologies enables highly efficient embedded IMC applications. In this work, we consider both resistive and capacitive approaches to realization IMC-compatible devices using HfO2. Process optimization concepts based on are presented context. This Spotlight Applications also reviews reliability reproducibility HfO2-based devices. architectures involving systems established mature. We discuss capabilities remarkable progress toward memristive these architectures. Special attention is given recently emerged capacitor (Fe-Cap)-based memcapacitive systems, which offer low-power consumption their open-circuit nature. Distinguished by nondestructive readout capability, Fe-Caps stand out from other memories that require switching memory states refresh cycles during access operations. Finally, compare electrical performance Fe-Cap for provides insights potential advanced systems.

Language: Английский

---

Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε‐InSe Layers

Advanced Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 14, 2024

Abstract 2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine optoelectronics. Besides induced different resistance states non‐volatile memories, switchable polarizations can also modulate photogenerated carriers potentially ultrafast optoelectronic devices. Here, it is demonstrated room temperature ferroelectricity be used photovoltaic response in ε‐InSe layers. By first‐principles calculations experimental characterizations, revealed out‐of‐plane (OOP) polarization only exists even layer ε‐InSe. The ε‐InSe‐based vertical devices, exhibit high on‐off ratios (≈10 4 ) storage capabilities. Moreover, OOP enables an (≈3 ps) bulk near‐infrared band, rendering a promising self‐powered reconfigurable photodetector. This work reveals essential role on carrier dynamics paves way hybrid multifunctional

Language: Английский

---