The Journal of Physical Chemistry C, Год журнала: 2024, Номер unknown
Опубликована: Дек. 22, 2024
Materials Today, Год журнала: 2024, Номер 77, С. 142 - 184
Опубликована: Июль 2, 2024
Язык: Английский
Процитировано
15
Advanced Optical Materials, Год журнала: 2024, Номер unknown
Опубликована: Окт. 3, 2024
Abstract High‐resolution infrared (IR) imaging technology holds substantial significance across diverse fields including biomedical imaging, environmental surveillance, and IR digital cameras. Current detectors used in commercial applications are based on ultra‐high vacuum‐processed traditional inorganic semiconductors like silicon or III‐V compounds (e.g., Si, Ge, InGaAs). However, the rapid advancements such as autonomous vehicles, virtual reality, point‐of‐care healthcare driving an escalating need for innovative technologies. This review aims to bridge gap by exploring solution‐processed semiconductor photodetectors (PDs), which offer distinct advantages cost‐effectiveness, tunable spectral response, potential multiple‐exciton generation. These characteristics make them particularly suitable optical communication, biological monitoring applications. provides comprehensive insights into research trends pertaining imagers colloidal quantum dots, perovskites, organic compounds, 2D materials. The commences with current market worth of image sensors, fundamental principles single‐pixel multipixel array imagers, key parameters assess detector performance. In essence, concludes a summary recent future prospects next‐generation PD devices their application imager.
Язык: Английский
Процитировано
5
Nano Energy, Год журнала: 2024, Номер 128, С. 109906 - 109906
Опубликована: Июнь 18, 2024
Язык: Английский
Процитировано
4
Korean Journal of Chemical Engineering, Год журнала: 2024, Номер 41(13), С. 3469 - 3482
Опубликована: Окт. 16, 2024
Язык: Английский
Процитировано
3
Materials Today Chemistry, Год журнала: 2024, Номер 43, С. 102466 - 102466
Опубликована: Дек. 12, 2024
Язык: Английский
Процитировано
3
Applied Physics Reviews, Год журнала: 2025, Номер 12(1)
Опубликована: Март 1, 2025
Optoelectronic devices, such as photodetectors (PDs), are needed in many applications including high-speed optical communications, robotics, healthcare, and biomimetic visual systems, which require detection interaction using light. As a result, wide variety of PDs on planar substrates have been reported various light sensitive materials traditional micro-/nano-fabrication technologies. In recent years, considerable efforts devoted to developing with flexible form factors eco-friendly approaches. These resulted exploration degradable printed electronics resource-efficient route for manufacturing contain end-of-life issues. This paper reviews new advances, particularly focusing based inorganic (e.g., crystalline silicon, compound semiconductors, metal oxides, etc.) semiconductor nanostructures [e.g., Nanowires (NWs), Nanoribbons (NRs), etc.]. The advantages disadvantages bottom-up top-down methods explored realize the wet (solution-processable) dry printing assembly print substrates, discussed along their suitability applications. discussion is supported by comparative analysis terms key performance metrics responsivity, detectivity, ILight/IDark ratio, response speed, external quantum efficiency. comprehensive expected benefit researchers practitioners from academia industry interested field PDs.
Язык: Английский
Процитировано
0
Nano Materials Science, Год журнала: 2025, Номер unknown
Опубликована: Май 1, 2025
Язык: Английский
Процитировано
0
IntechOpen eBooks, Год журнала: 2025, Номер unknown
Опубликована: Май 15, 2025
This chapter mainly discusses the fundamental principles of photovoltaic detection, namely, energy conversion procedure light into electrical signals in photodetectors (PD) and avalanche (APD). After briefly introducing basic PIN PD APD, focuses on analyzing dark current’s noise sources origin, bridging relationship between device’s sensitivity performance its material device characteristics. From these analyses, readers could understand that PD, especially under high data rates, can be significantly enhanced by merely increasing bias voltage to turn it APD mode. A step further, this provides deeper insights modifying structure from perspective carrier transportation impact ionization engineering. Besides, Geiger mode which is capable sensing weak at a single photon level, also described. In final part chapter, challenges detectors are discussed, many recent technical approaches, including linear high-gain digital alloys SPAD with dynamic memristor quenching, have been presented tackle challenges. By demonstrating detectors, particularly analysis receiver sensitivity, provide comprehensive valuable for designing optimizing high-sensitivity detection systems. These systems find applications various fields, optical interconnection, communication, LiDAR.
Язык: Английский
Процитировано
0
Photonics, Год журнала: 2024, Номер 11(11), С. 1052 - 1052
Опубликована: Ноя. 9, 2024
Two-dimensional materials have excellent optoelectronic properties and great significance in the field of photodetectors. We prepared a thin film photodetector based on bismuth telluride (Bi2Te3) topological insulator using dual-temperature-zone vapor deposition technology. Due to high-quality lattice structure Bi2Te3 uniform dense surface morphology film, device exhibits photoelectric response Vis–NIR spectral range. Under 405 nm illumination, responsivity is 5.6 mA/W, specific detectivity 1.22 × 107 Jones, time 262/328 ms. designed single-point scanning imaging system successfully achieved high-resolution at wavelength 532 nm. This work provides guidance for application two-dimensional materials, especially Bi2Te3, fields photodetectors imaging.
Язык: Английский
Процитировано
1
The Journal of Physical Chemistry C, Год журнала: 2024, Номер unknown
Опубликована: Дек. 22, 2024
Процитировано
1