Demonstration of AlGaN/GaN HEMT-based non-classical optoelectronic logic inverter DOI
Ramit Kumar Mondal, Fuad Indra Alzakia, Ravikiran Lingaparthi

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(17)

Опубликована: Апрель 28, 2025

AlGaN/GaN high electron mobility transistor (HEMT) has excellent promise for developing industrially viable optoelectronic logic gates (OELGs). We demonstrate HEMT-based non-classical inverter circuit (OLIC) serving as the primary step toward realization of complex OELGs. The OLIC consists a Schottky diode (SD) and phototransistor (PT) fabricated on HEMT epi-structure SiC substrate. SD PT work load driver, respectively, so that voltage signals could be easily extracted output in response to electrical optical inputs with suitable gate biasing. Simple fabrication process technological compatibility our will provide promising solution can extended advanced computing circuits.

Язык: Английский

Demonstration of AlGaN/GaN HEMT-based non-classical optoelectronic logic inverter DOI
Ramit Kumar Mondal, Fuad Indra Alzakia, Ravikiran Lingaparthi

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(17)

Опубликована: Апрель 28, 2025

AlGaN/GaN high electron mobility transistor (HEMT) has excellent promise for developing industrially viable optoelectronic logic gates (OELGs). We demonstrate HEMT-based non-classical inverter circuit (OLIC) serving as the primary step toward realization of complex OELGs. The OLIC consists a Schottky diode (SD) and phototransistor (PT) fabricated on HEMT epi-structure SiC substrate. SD PT work load driver, respectively, so that voltage signals could be easily extracted output in response to electrical optical inputs with suitable gate biasing. Simple fabrication process technological compatibility our will provide promising solution can extended advanced computing circuits.

Язык: Английский

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