2010 12th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA 2010), Год журнала: 2023, Номер unknown, С. 1 - 4
Опубликована: Сен. 28, 2023
Язык: Английский
Chemical Society Reviews, Год журнала: 2023, Номер 52(20), С. 7071 - 7136
Опубликована: Янв. 1, 2023
This review highlights the film preparation methods and application advances in memory neuromorphic electronics of porous crystalline materials, involving MOFs, COFs, HOFs, zeolites.
Язык: Английский
Процитировано
93
Nanomaterials, Год журнала: 2024, Номер 14(5), С. 465 - 465
Опубликована: Март 4, 2024
Flexible electronics is a cutting-edge field that has paved the way for artificial tactile systems mimic biological functions of sensing mechanical stimuli. These have an immense potential to enhance human-machine interactions (HMIs). However, still faces formidable challenges in delivering precise and nuanced feedback, such as achieving high sensitivity emulate human touch, coping with environmental variability, devising algorithms can effectively interpret data meaningful diverse contexts. In this review, we summarize recent advances sensory systems, piezoresistive, capacitive, piezoelectric, triboelectric sensors. We also review state-of-the-art fabrication techniques Next, focus on applications HMIs, intelligent robotics, wearable devices, prosthetics, medical healthcare. Finally, conclude future development trends
Язык: Английский
Процитировано
16
Chemical Engineering Journal, Год журнала: 2023, Номер 479, С. 147900 - 147900
Опубликована: Дек. 6, 2023
Язык: Английский
Процитировано
21
Nature Communications, Год журнала: 2024, Номер 15(1)
Опубликована: Сен. 27, 2024
Язык: Английский
Процитировано
5
Applied Physics Reviews, Год журнала: 2024, Номер 11(4)
Опубликована: Окт. 1, 2024
In the era of artificial intelligence and smart automated systems, quest for efficient data processing has driven exploration into neuromorphic aiming to replicate brain functionality complex cognitive actions. This review assesses, based on recent literature, challenges progress in developing basic focusing “material-neuron” concepts, that integrate structural similarities, analog memory, retention, Hebbian learning brain, contrasting with conventional von Neumann architecture spiking circuits. We categorize these devices filamentary non-filamentary types, highlighting their ability mimic synaptic plasticity through external stimuli manipulation. Additionally, we emphasize importance heterogeneous neural content support conductance linearity, plasticity, volatility, enabling effective storage various types information. Our comprehensive approach categorizes fundamentally different under a generalized pattern dictated by driving parameters, namely, pulse number, amplitude, duration, interval, as well current compliance employed contain conducting pathways. also discuss hybridization protocols fabricating systems making use existing complementary metal oxide semiconductor technologies being practiced silicon foundries, which perhaps ensures smooth translation user interfacing new generation devices. The concludes outlining insights challenges, future directions realizing deployable field intelligence.
Язык: Английский
Процитировано
5
Chemical Engineering Journal, Год журнала: 2024, Номер 498, С. 155244 - 155244
Опубликована: Авг. 28, 2024
Язык: Английский
Процитировано
4
Advanced Materials, Год журнала: 2025, Номер unknown
Опубликована: Фев. 18, 2025
Abstract The increasing demand for energy supply in sensing units and the computational efficiency of computation has prompted researchers to explore novel, integrated technology that offers high low consumption. Self‐powered enables environmental perception without external sources, while neuromorphic provides energy‐efficient high‐performance computing capabilities. integration self‐powered presents a promising solution an all‐in‐one system. This review examines recent developments advancements artificial neuron devices based on triboelectric, piezoelectric, photoelectric effects, focusing their structures, mechanisms, functions. Furthermore, it compares electrical characteristics various types discusses effective methods enhancing performance. Additionally, this comprehensive summary systems, encompassing tactile, visual, auditory systems. Moreover, elucidates recently systems combine perception, computing, actuation into configurations, aspiring realize closed‐loop control. seamless holds significant potential shaping more intelligent future humanity.
Язык: Английский
Процитировано
0
Microsystems & Nanoengineering, Год журнала: 2025, Номер 11(1)
Опубликована: Фев. 28, 2025
Abstract Ionic fluidic devices are gaining interest due to their role in enabling self-powered neuromorphic computing systems. In this study, we present an approach that integrates iontronic memristive (IFM) device with low input impedance and a triboelectric nanogenerator (TENG) based on ferrofluid (FF), which has high impedance. By incorporating contact separation electromagnetic (EMG) signals into our FF TENG device, enhance the TENG’s performance by increasing energy harvesting, thereby autonomous powering of IFM for computing. Further, replicating neuronal activities using artificial systems is key advancing These devices, composed soft-matter materials, dynamically adjust conductance altering solution interface. We developed voltage-controlled memristor memcapacitor memory polydimethylsiloxane (PDMS) structures, utilising interface polyacrylic acid partial sodium salt (PAA Na + ). The confined ion interactions system induce hysteresis transport across various frequencies, resulting significant effects. Our successfully replicates diverse electric pulse patterns, making it highly suitable Furthermore, demonstrates synapse-like learning functions, storing retrieving short-term (STM) long-term (LTM). exhibits dynamic features, promising candidate hardware implementation neural networks. TENG/EMG adaptability seamless integration biological enable development advanced further enhanced intricate chemical designs electronics.
Язык: Английский
Процитировано
0
Energy Technology, Год журнала: 2025, Номер unknown
Опубликована: Март 5, 2025
Harvesting ambient mechanical energy from the environment has gained immense interest due to its application in harvesting and active sensing. Herein, an ABO 3 class ferroelectric semiconducting material BaTiO nanoparticles are used, Antimony (Sb) is used as a dopant, which can be able enhance piezoelectric coefficient of higher level, leading increased energy‐harvesting performances. The fabricated antimony‐doped barium titanate [Sb‐doped designated (BST)] then blended with polydimethylsiloxane (PDMS) prepare composite film. Electrodes attached film on either side fabricate flexible nanogenerator (FCF‐PENG) device. FCF‐PENG device generates maximum electrical output peak‐to‐peak 28 V 1.5 μA, respectively. also shows good power density 1.6 mW m −2 at load resistance 80 MΩ. At last, real‐time impact sensor was employ wearable sensor. detects high low upon human collision tested within laboratory values recorded monitored indicator using ESP32 microcontroller ThingSpeak cloud. above analysis experiments proved that paves way toward sports healthcare rehabilitation Internet Things (IoT) devices soon.
Язык: Английский
Процитировано
0
Advanced Materials Technologies, Год журнала: 2025, Номер unknown
Опубликована: Апрель 9, 2025
Abstract Chalcogenide materials are promising candidates for next generation memories since they can be stacked to integrate both two‐terminal non‐volatile memory and volatile selector devices large‐scale‐integration crossbar arrays. Traditionally, based on chalcogenides have been fabricated using vacuum‐dependent high‐temperature methods. In this study, the first demonstration of ovonic threshold switching (OTS) resistive (RS) behaviors in zinc telluride (ZnTe) thin films produced via a rapid, cost‐effective, vacuum‐free electrodeposition technique is presented. This method also allows control over ZnTe film composition within same electrolyte by varying deposition potentials. These findings reveal that stoichiometric exhibit OTS behavior, while Te‐rich display RS characteristics. The selectors show robust with controllable operating current levels, whereas demonstrate reliable at low voltages, achieving multilevel through variations DC sweeping voltages. A one‐selector‐one‐resistor (1S1R) architecture successfully implemented connecting series element, thereby validating potential as applications. work provides significant advancement toward constructing structures methods, paving way high‐density array
Язык: Английский
Процитировано
0