Temperature‐Resilient Polymeric Memristors for Effective Deblurring in Static and Dynamic Imaging

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Янв. 24, 2025

Abstract Organic memristors have emerged as promising candidates for neuromorphic computing due to their potential low‐cost fabrication, large‐scale integration, and biomimetic functionality. However, practical applications are often hindered by limited thermal stability device‐to‐device variability. Here, an organic polymer‐based memristor using a thiadiazolobenzotriazole (TBZ) 2,5‐Dioctyl‐3,6‐di(thiophen‐2‐yl)pyrrolo[3,4‐c]pyrrole‐1,4(2H,5H)‐dione (DPP)‐based conjugated polymer is presented that exhibits exceptional reliable resistance switching behavior over wide temperature range (153–573 K). The device leverages charge‐transfer mechanism achieve gradual uniform switching, overcoming the challenges associated with filamentary‐based mechanisms. memristor's consistent performance enable its integration into various applications, including image processing. device's ability demonstrated effectively deblur images, even under varying conditions, showcasing robust computing. This study establishes pathway toward high‐performance, thermally stable advanced artificial intelligence applications.

Язык: Английский

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Cognitive Learning and Neuromorphic Systems Using Resistive Switching Random-Access Memory

ACS Applied Electronic Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 8, 2025

Язык: Английский

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Emulating nociceptor and synaptic functions in GaOx-based resistive random-access memory for bio-inspired computing

Applied Surface Science, Год журнала: 2025, Номер unknown, С. 162973 - 162973

Опубликована: Март 1, 2025

Язык: Английский

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Multifunctional memristors based on N-doped Nb2C MXene nanosheets for neuromorphic computing

Journal of Alloys and Compounds, Год журнала: 2025, Номер unknown, С. 179892 - 179892

Опубликована: Март 1, 2025

Язык: Английский

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Dynamic resistive switching of WOx-based memristor for associative learning activities, on-receptor, and reservoir computing

Chaos Solitons & Fractals, Год журнала: 2025, Номер 196, С. 116381 - 116381

Опубликована: Март 31, 2025

Язык: Английский

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Depolarization Field Controllable HfZrO_x-Based Ferroelectric Capacitors for Physical Reservoir Computing System

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Март 31, 2025

Reservoir computing as one of the artificial neural networks can process input signals in various ways, thereby showing strength modeling data that changes over time. The reservoir is utilized fields because it particularly energy efficient learning and exhibit powerful performance with relatively few trainings cost. This study emphasizes significant advantages hafnium zirconium oxide (HZO) film applications by controlling depolarization field. decay time HZO-based ferroelectric memory devices investigated, focusing on impact both layer thickness interlayer (IL) physical system. Devices HZO thicknesses 10, 15, 20 nm were fabricated characterized. Among these, 15 demonstrated optimal thickness, exhibiting excellent properties, including enhanced orthorhombic phase (o-phase) formation reliable short-term characteristics. When optimized device for integrated into a system, achieved remarkable average accuracy 93.42% image recognition tasks, emphasizing its capability high-precision computations.

Язык: Английский

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Dynamic NiOx-based memristors for edge computing

Chinese Journal of Physics, Год журнала: 2025, Номер unknown

Опубликована: Апрель 1, 2025

Язык: Английский

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Improved memory and synaptic device performance of HfO2-based multilayer memristor by inserting oxygen gradient TiOx layer

Chaos Solitons & Fractals, Год журнала: 2024, Номер 191, С. 115910 - 115910

Опубликована: Дек. 17, 2024

Язык: Английский

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