
Sensors, Год журнала: 2025, Номер 25(9), С. 2750 - 2750
Опубликована: Апрель 26, 2025
We report an ion-gel-gated amorphous indium gallium zinc oxide (a-IGZO) optoelectronic neuromorphic transistors capable of synaptic emulation in both photoelectric dual modes. The ion-gel dielectric the coplanar-structured transistor, fabricated via ink-jet printing, exhibits excellent double-layer capacitance (>1 μF/cm2) and supports low-voltage operation through lateral gate coupling. integration printing technology enables scalable large-area fabrication, highlighting its industrial feasibility. Electrical stimulation-induced artificial behaviors were successfully demonstrated ion migration gel matrix. Through a simple controllable oxygen vacancy engineering process involving low-temperature oxygen-free growth post-annealing process, sufficient density stable subgap states was generated IGZO, extending responsivity spectrum to visible-red region enabling wavelength-discriminative photoresponses 450/532/638 nm visible light. Notably, exhibited unique interaction dynamics with low-energy photons optically triggered pulse responses. Critical functionalities—including short-term plasticity (STP), long-term (LTP), paired-pulse facilitation (PPF)—were simulated under optical electrical stimulations. device achieves low energy consumption while maintaining compatibility flexible substrates processing (≤150 °C). This study establishes platform for multimodal systems utilizing printed iontronic architectures.
Язык: Английский