Two-Dimensional Materials for Brain-Inspired Computing Hardware

Chemical Reviews, Год журнала: 2025, Номер unknown

Опубликована: Янв. 2, 2025

Recent breakthroughs in brain-inspired computing promise to address a wide range of problems from security healthcare. However, the current strategy implementing artificial intelligence algorithms using conventional silicon hardware is leading unsustainable energy consumption. Neuromorphic based on electronic devices mimicking biological systems emerging as low-energy alternative, although further progress requires materials that can mimic function while maintaining scalability and speed. As result their diverse unique properties, atomically thin two-dimensional (2D) are promising building blocks for next-generation electronics including nonvolatile memory, in-memory neuromorphic computing, flexible edge-computing systems. Furthermore, 2D achieve biorealistic synaptic neuronal responses extend beyond logic memory Here, we provide comprehensive review growth, fabrication, integration van der Waals heterojunctions optoelectronic devices, circuits, For each case, relationship between physical properties device emphasized followed by critical comparison technologies different applications. We conclude with forward-looking perspective key remaining challenges opportunities applications leverage fundamental heterojunctions.

Язык: Английский

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Recent Advances in MXene-Based Electrochemical Sensors

Biosensors, Год журнала: 2025, Номер 15(2), С. 107 - 107

Опубликована: Фев. 13, 2025

MXene is a new family of two-dimensional nanomaterials with outstanding electrical conductivity, tunable structure, biocompatibility, and large surface area. Thanks to these unique physicochemical properties, has been used for constructing electrochemical sensors (MECSens) excellent performance. In particular, the abundant termination can contribute greatly enhancing analytical sensitivity selectivity MECSens. Recently, MECSens have widely applied in many fields including clinical diagnosis, infectious disease surveillance, food security. However, not all materials are suitable building sensors. this article, we present an overview different that developed so far. We begin short summary preparation characterization Subsequently, performance, detection strategies, application scenarios classified briefly discussed. The article ends conclusion future perspectives. hope will be helpful designing activity analysis.

Язык: Английский

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Emerging Enhancement and Regulation Strategies for Ferromagnetic 2D Transition Metal Dichalcogenides

Advanced Science, Год журнала: 2023, Номер 10(21)

Опубликована: Май 13, 2023

Two-dimensional transition metal dichalcogenides (2D TMDs) present promising applications in various fields such as electronics, optoelectronics, memory devices, batteries, superconductors, and hydrogen evolution reactions due to their regulable energy band structures unique properties. For emerging spintronics applications, materials with excellent room-temperature ferromagnetism are required. Although most compounds do not possess on own, they widely modified by researchers using the strategies engineer or modulate intrinsic This paper reviews recent enhancement approaches induce magnetism 2D TMDs, mainly doping, vacancy defects, composite of heterostructures, phase modulation, adsorption, also electron irradiation induction, O plasma treatment, etc. On this basis, produced effects these methods for introduction into TMDs compressively summarized constructively discussed. perspective, research magnetic doping techniques should be directed toward more reliable efficient directions, exploring advanced design combine dilute semiconductors, antiferromagnetic superconductors develop new types heterojunctions; advancing experimentation fabricate designed enable functionalities simultaneously pursuing upscalable growth high-quality monolayers multilayers.

Язык: Английский

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Magnetic Real Chern Insulator in 2D Metal–Organic Frameworks

Nano Letters, Год журнала: 2023, Номер 23(16), С. 7358 - 7363

Опубликована: Авг. 3, 2023

Real Chern insulators have attracted great interest, but so far, their material realization is limited to nonmagnetic crystals and systems without spin-orbit coupling. Here, we reveal the magnetic real insulator (MRCI) state in a recently synthesized metal-organic framework Co3(HITP)2. Its ground with in-plane ferromagnetic ordering hosts nontrivial number, enabled by C2zT symmetry robustness against Distinct from previous examples, topological corner zero modes of MRCIs are spin-polarized. Furthermore, under small tensile strains, undergoes phase transition MRCI double-Weyl semimetal phase, via pseudospin-1 critical state. Similar physics can also be found closely related materials Mn3(HITP)2 Fe3(HITP)2, which exist. Possible experimental detections implications an emerging flat band system discussed.

Язык: Английский

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Ultrasensitive Near-Infrared Polarization Photodetectors with Violet Phosphorus/InSe van der Waals Heterostructures

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(15), С. 19214 - 19224

Опубликована: Апрель 5, 2024

Near-infrared (NIR) polarization photodetectors with two-dimensional (2D) semiconductors and their van der Waals (vdW) heterostructures have presented great impact for the development of a wide range technologies, such as in optoelectronics communication fields. Nevertheless, lack photogenerated charge carrier at device's interface leads to poor collection efficiency low linear dichroism ratio, hindering achievement high-performance optoelectronic devices multifunctionalities. Herein, we present type-II violet phosphorus (VP)/InSe vdW heterostructure that is predicted via density functional theory calculation confirmed by Kelvin probe force microscopy. Benefiting from band alignment, VP/InSe heterostructure-based photodetector achieves excellent photodetection performance responsivity (R) 182.8 A/W, detectivity (D*) 7.86 × 1012 Jones, an external quantum (EQE) 11,939% under 1064 nm photon excitation. Furthermore, can be enhanced manipulating device geometry inserting few layers graphene between VP InSe (VP/Gr/InSe). Remarkably, VP/Gr/InSe shows competitive sensitivity 2.59 integrated image sensor. This work demonstrates will effective promising NIR optoelectronics.

Язык: Английский

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Strain-modulated defect engineering of two-dimensional materials

npj 2D Materials and Applications, Год журнала: 2024, Номер 8(1)

Опубликована: Май 7, 2024

Abstract Strain- and defect-engineering are two powerful approaches to tailor the opto-electronic properties of two-dimensional (2D) materials, but relationship between applied mechanical strain behavior defects in these systems remains elusive. Using first-principles calculations, we study response external h -BN, graphene, MoSe 2 , phosphorene, four archetypal 2D which contain substitutional impurities. We find that formation energy defect structures can either increase or decrease with bi-axial strain, tensile compressive, depending on atomic radius impurity atom, be larger smaller than host atom. Analysis maps indicates this is associated compressive local strains produced by impurities interfere strain. further show change related elastic moduli materials upon introduction impurity, correspondingly decrease. The discovered trends consistent across all studied likely general. Our findings open up opportunities for combined strain- specifically, location single-photon emitters.

Язык: Английский

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Flexoelectricity‐Enhanced Self‐Powered Photodetection in 2D van der Waals Heterojunctions With Large Curvatures

Advanced Functional Materials, Год журнала: 2024, Номер 34(27)

Опубликована: Март 4, 2024

Abstract The unique morphology of 2D van der Waals materials enables them to withstand large deformations and significant nonuniform strain, potentially inducing a strong flexoelectric effect. Despite the size‐dependent effect showing potential for modulating optoelectronic performance materials, it is far from being fully exploited owing various challenges. Herein, use nanowires with different diameters as bending media fabricate α‐In 2 Se 3 /β‐InSe heterojunctions curvatures 0.1–1 µm −1 proposed. band alignment modulation in resulting bending‐induced verified through Kelvin probe force microscopy. strain‐induced piezoelectric can be negated because weak vdW forces at interface. polarization β‐InSe screened via accumulated electrons unilateral depleted heterojunction. Compared flat heterojunction, curved heterojunction an average curvature 0.9 shows 2.48‐fold 7.62‐fold increases open‐circuit voltage zero‐biased responsivity, respectively. This study demonstrates first successful photodetection by exploiting effect, providing new perspective high‐performance devices.

Язык: Английский

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Chemical Vapor Deposition of a Single-Crystalline MoS₂ Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

ACS Nano, Год журнала: 2024, Номер 18(4), С. 3173 - 3186

Опубликована: Янв. 18, 2024

Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS2) crystal domain bimodality and yield single-crystalline MoS2 monolayer on commonly employed sapphire substrates. This work reveals an alternative mechanism during metal–organic chemical vapor deposition (MOCVD) of through anisotropic 2D growth. During early stages, epitaxial symmetry commensurability terraces rather than step inclination ultimately govern orientation. Strikingly, as crystals continue grow laterally, steps transform geometry into diamond-shaped domains presumably by diffusion ad-species facet development. Even though these nucleate with predominantly bimodal 0 60° azimuthal rotation, individual reach lateral dimensions up 200 nm before merging seamlessly upon coalescence. Plan-view transmission electron microscopy nature across 50 μm inspection areas. As result, median carrier mobility monolayers peaks at 25 cm2 V–1 s–1 highest value reaching 28 s–1. details synthesis–structure correlations possibilities tune structure material properties substrate topography toward various applications in nanoelectronics, catalysis, nanotechnology. Moreover, shape modulation phenomena stepped surfaces can provide opportunities for nanopatterning wide range materials.

Язык: Английский

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Strain engineering in power-generating and self-powered nanodevices

Nano Energy, Год журнала: 2024, Номер 125, С. 109551 - 109551

Опубликована: Апрель 2, 2024

Язык: Английский

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Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials

Nanomaterials, Год журнала: 2023, Номер 13(16), С. 2378 - 2378

Опубликована: Авг. 19, 2023

Since the discovery of low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability two-dimensional (2D) materials provides an exciting way mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize recent progress engineering FM 2D van der Waals materials. First, introduce how explain strain-mediated on Cr-based Fe-based through ab initio Density functional theory (DFT), calculate magnetic anisotropy energy (MAE) Curie (TC) from interlayer exchange coupling J. Subsequently, focus numerous attempts apply experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force field-cooling. Last, emphasize that this field is still early stages, there are challenges need be overcome. More importantly, strengthening guideline will promote development spintronics straintronics.

Язык: Английский

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