Unveiling Controlled Growth of Single‐Crystalline Layered Sb₂Te₃ Via Van Der Waals Epitaxy for Visible‐Light Photodetectors and Optoelectronic Synapses

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 17, 2025

Abstract 2D layered Sb 2 Te 3 has emerged as a promising material for thermoelectric and optoelectronic applications. However, fabricating single‐crystalline flakes with the desired size, shape, orientation remains challenging due to limited understanding of their growth mechanisms. In this study, how substrate, time, carrying gas, its flow rate influence behavior through chemical vapor deposition (CVD) approach combined van der Waals epitaxy (vdWE) is elucidated. By fine‐tuning these parameters, controlled morphology, crystal on mica substrates are successfully achieved. Notably, record‐high anisotropy ratio in exceeding 10,000 obtained. Photodetectors fabricated from demonstrate excellent performance, achieving responsivity 1.34 A W −1 , large external quantum efficiency (EQE) 332%, high specific detectivity (D * ) 1.38 × 10¹⁰ Jones under light power density 10 mW cm − . Moreover, device exhibits modulated photocurrent pulsed light, suggesting potential applications synapses. This work provides detailed insights into flakes, offering unprecedented opportunities exploring fundamental properties development next‐generation devices.

Язык: Английский

Physical mechanisms and integration design of memristors

Materials Today Nano, Год журнала: 2025, Номер unknown, С. 100628 - 100628

Опубликована: Апрель 1, 2025

Язык: Английский