Fully‐Solution‐Processed Inverted Near‐Infrared LEDs Enabled by Wavelength‐Tunable and Oxidation‐Resistant Lead‐Tin Perovskite DOI
Zihang Peng,

Shuai‐Hao Xu,

Wei‐Zhi Liu

и другие.

Advanced Optical Materials, Год журнала: 2025, Номер unknown

Опубликована: Май 6, 2025

Abstract Compared to APbI 3 ‐based perovskites (A = Cs + , MA FA ), ASnI exhibit longer emission wavelengths and lower toxicity, emerging as promising candidates for near‐infrared light‐emitting diodes (NIR‐LEDs). However, the electroluminescence of perovskite LEDs remain below 950 nm, face challenge extreme susceptibility Sn 2+ oxidation. In this study, fabrication high‐performance NIR‐LEDs using hybrid Pb‐Sn (FAPb x 1−x I ) are demonstrated with tunable from 800 958 nm by optimizing Pb:Sn ratios. Furthermore, 5‐aminovaleric acid (5‐AVA) an antioxidant is introduced, which capable suppressing oxidation enhancing stability optoelectronic performance films. The optimized FAPb 0.5 NIR LED exhibits peak at a maximum external quantum efficiency (EQE) 2.5%, representing record band‐edge‐emitting above nm. This work highlights potential efficient light sources, paving way their application in next‐generation devices.

Язык: Английский

Simultaneous Regulation of Crystallization and Suppression of Oxidation in CsSnI3 Perovskite Enables Efficient and Stable Near-Infrared Light-Emitting Diodes DOI
Zirui Liu, Guanglong Wang, Lingmei Kong

и другие.

Nano Letters, Год журнала: 2025, Номер unknown

Опубликована: Апрель 16, 2025

Tin-based halide perovskite light-emitting diodes (PeLEDs) emitting in the near-infrared region beyond 900 nm hold tremendous potential for applications night vision, biomedicine, and communications. However, rapid crystallization oxidation of Sn2+ tin-based perovskites pose significant challenges achieving stable PeLEDs with high performance. Here, we report an efficient all-inorganic CsSnI3-based PeLED by employing a multifunctional hesperetin additive to modulate kinetics inhibit process films. Hesperetin possesses hydroxyl groups alongside oxygen atoms offering lone electron pairs, which form hydrogen bonds I- strongly coordinate Sn2+, respectively, slowing down CsSnI3 resulting coverage density Importantly, coordination protects films from Sn2+-to-Sn4+ oxidation. Finally, demonstrate peak at 948 nm, external quantum efficiency 4.7%, half-lifetime over 11 h.

Язык: Английский

Процитировано

0
Influence of Interfacial Reactions on Perovskite Optoelectronic Devices DOI Creative Commons
Zhongcheng Yuan, Sai Bai,

Feng Gao

и другие.

Small Methods, Год журнала: 2025, Номер unknown

Опубликована: Май 3, 2025

Abstract Interfacial materials tend to alter the crystallization, films growth and defect formation process of as‐deposited perovskites, which has been a critical fundamental factor in determining efficiency operational stability perovskite‐based optoelectronic devices. This review explores underlying mechanism interfacial reactions, can either result degradations or be beneficial. The influence mainly interface‐induced deprotonation organic cations amidation processes, are discussed relation their impact on perovskite film ensuing device performance. It is further proposed strategies regulate these reactions mitigate negative effects achieve high performance

Язык: Английский

Процитировано

0
Fully‐Solution‐Processed Inverted Near‐Infrared LEDs Enabled by Wavelength‐Tunable and Oxidation‐Resistant Lead‐Tin Perovskite DOI
Zihang Peng,

Shuai‐Hao Xu,

Wei‐Zhi Liu

и другие.

Advanced Optical Materials, Год журнала: 2025, Номер unknown

Опубликована: Май 6, 2025

Abstract Compared to APbI 3 ‐based perovskites (A = Cs + , MA FA ), ASnI exhibit longer emission wavelengths and lower toxicity, emerging as promising candidates for near‐infrared light‐emitting diodes (NIR‐LEDs). However, the electroluminescence of perovskite LEDs remain below 950 nm, face challenge extreme susceptibility Sn 2+ oxidation. In this study, fabrication high‐performance NIR‐LEDs using hybrid Pb‐Sn (FAPb x 1−x I ) are demonstrated with tunable from 800 958 nm by optimizing Pb:Sn ratios. Furthermore, 5‐aminovaleric acid (5‐AVA) an antioxidant is introduced, which capable suppressing oxidation enhancing stability optoelectronic performance films. The optimized FAPb 0.5 NIR LED exhibits peak at a maximum external quantum efficiency (EQE) 2.5%, representing record band‐edge‐emitting above nm. This work highlights potential efficient light sources, paving way their application in next‐generation devices.

Язык: Английский

Процитировано

0