Advance in Antimony Triselenide Solar Cell Power Conversion by Dye Sensitized Solar Cell Integration DOI

Vikramachari Mudumala,

Parnapalli Muni Mounika,

Neeraja Adike

и другие.

Solid State Communications, Год журнала: 2025, Номер 404, С. 116025 - 116025

Опубликована: Июнь 3, 2025

Язык: Английский

Phase evolution in AgSbS2 thin films synthesized via a two-stage process DOI Creative Commons
Y.B. Kishore Kumar,

Athipalli Divya,

Radhalayam Dhanalakshmi

и другие.

Materials Research Bulletin, Год журнала: 2025, Номер unknown, С. 113430 - 113430

Опубликована: Март 1, 2025

Язык: Английский

Процитировано

0

Establishing design principles for functional additives in antimony chalcogenide solar cells DOI Creative Commons
Matthew Sutton, Neil Robertson, Tayebeh Ameri

и другие.

Journal of Materials Chemistry A, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

By controlling the pH, formation of Sb 2 O 3 is effectively suppressed through an in situ conversion mechanism, facilitating direct transformation to S and enhancing material quality for high power efficiency solar cells.

Язык: Английский

Процитировано

0

Heterojunction Interface Anomalous High‐Energy Level Insertion Modulating Carrier Dynamics in High‐Efficiency Antimony Selenide Thin‐Film Solar Cells DOI

Bangzhi Shen,

Tingyu Zhang, Junjie Dong

и другие.

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Май 13, 2025

Abstract 1D antimony selenide (Sb 2 Se 3 ) films are commonly used as absorber layers in high‐efficiency thin‐film solar cells due to their excellent optoelectronic properties. However, the performance of Sb is severely limited by serious carrier recombination. Exploring effective recombination and transport regulation crucial enhancing cells. In this work, unlike previously reported conventional gradient band structures, a high‐energy‐level ultrathin amorphous tin oxide layer (SnO deposited atomic deposition an interfacial inserted at cadmium sulfide (CdS)/Sb heterojunction. Unlike layers, SnO interface does not exhibit significant ion diffusion heterojunction interface. Notably, results indicate that can promote [ hk 1] orientation, thereby orientation‐induced transport. Furthermore, significantly reduce both bulk defects, improve extraction, decrease This leads improved collection. Ultimately, cell with efficiency 9.73% achieved based on enhanced increased lifetime, optimized alignment. work also provide theoretical technical support for sustainable development

Язык: Английский

Процитировано

0

Advance in Antimony Triselenide Solar Cell Power Conversion by Dye Sensitized Solar Cell Integration DOI

Vikramachari Mudumala,

Parnapalli Muni Mounika,

Neeraja Adike

и другие.

Solid State Communications, Год журнала: 2025, Номер 404, С. 116025 - 116025

Опубликована: Июнь 3, 2025

Язык: Английский

Процитировано

0