Advanced Energy Materials, Год журнала: 2025, Номер unknown
Опубликована: Июнь 1, 2025
Abstract All inorganic CsPbI 3 perovskites have attracted significant attention due to their excellent thermal stability and ideal bandgap characteristics. However, interfacial defects at the perovskite/electron transport layer (ETL) interface uncontrolled crystallization processes of perovskite remain critical bottlenecks for advancing device performance. Herein, a multifunctional buried interface‐modifying additive, pentafluoroaniline trifluoromethane sulfonate (PFAT), is employed. Analytical results confirm that PFAT can effectively anchor TiO 2 /perovskite while passivating in both layers, thereby suppressing recombination losses. Furthermore, this modification reduce surface energy crystal plane, promoting yielding films with enhanced crystallinity. To strengthen PFAT‐perovskite interactions, PFAT‐PbI hybrid solution (PFATLI) synthesized modification. Consequently, optimized PFATLI‐modified achieved power conversion efficiency (PCE) 21.36%, an open‐circuit voltage ( V OC ) 1.23 V, fill factor (FF) 83.44%. For larger‐area devices active area 1 cm , PCE reached 17.41%, under weak illumination conditions, further increased 41.27%. After 800 h storage ambient environment 5% relative humidity (RH) room temperature (RT), unencapsulated retained 87.27% its initial efficiency.
Язык: Английский