2D C‐Axis‐Aligned Crystalline In─S─O Transistors Processed from Aqueous Solution DOI Creative Commons
Wangying Xu,

Jierui Lin,

Yanwei Li

и другие.

Advanced Electronic Materials, Год журнала: 2024, Номер unknown

Опубликована: Июль 28, 2024

Abstract There is a growing interest in exploring nanometer‐thin 2D oxide semiconductor transistors for future scaled and multifunctional (e.g., ultraflexible high transparency) devices. However, further development hindered due to the degraded device performance with channels use of costly vacuum‐based techniques. Here, (2.7 nm thick) c‐axis‐aligned crystalline In─S─O channel material processed from aqueous solution reported. The based on Si/SiO 2 substrates exhibit mobility ( µ ) 22.15 cm V −1 s , on/off current ratio I / off ≈10 7 good bias stress stability. Detailed investigations show that this achievement attributed highly structure, well‐designed material, atomically smooth surface. Furthermore, integrated an sol‐gel‐derived 6 thick high‐ k ZrO insulator. all‐aqueous‐solution‐based quasi‐2D In─S─O/ZrO devices 15.65 ─1 low operating voltage 1.5 V. This wide‐bandgap opens tremendous opportunities multifunctional, ultra‐scaled low‐cost electronics.

Язык: Английский

Enhancement of In2O3 Field-Effect Mobility Up To 152 cm2.V−1·s−1Using HZO-Based Higher-k Linear Dielectric DOI
Zehao Lin, Chang Niu,

Hyeongjun Jang

и другие.

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Год журнала: 2024, Номер unknown, С. 1 - 2

Опубликована: Июнь 16, 2024

Язык: Английский

Процитировано

1
Liquid Metal Interface for Two-Precursor Autogenous Deposition of Metal Telluride–Tellurium Networks DOI
Maedehsadat Mousavi, Mohammad B. Ghasemian, Mahroo Baharfar

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2023, Номер 15(40), С. 47394 - 47404

Опубликована: Сен. 27, 2023

Liquid metal-electrolyte can offer electrochemically reducing interfaces for the self-deposition of low-dimensional nanomaterials. We show that implementing such from multiprecursors is a promising pathway achieving nanostructured films with combinatory properties and functionalities. Here, we explored liquid metal-driven interfacial growth metal tellurides using eutectic gallium-indium (EGaIn) as cation pairs Ag+-HTeO2+ Cu2+-HTeO2+ precursors. At EGaIn-electrolyte interface, precursors were reduced self-deposited autogenously to form interconnected nanoparticle networks. The deposited materials consisted telluride tellurium their relative abundance depending on ion type (Ag+ Cu2+) metal-to-tellurium ratios. When used electrode modifiers, synthesized increased electroactive surface area unmodified electrodes by over 10 times demonstrated remarkable activity model electrochemical reactions, including HexRu(III) responses dopamine sensing. Our work reveals potential metal-templated deposition method synthesizing complex material systems applications.

Язык: Английский

Процитировано

2
Control of Oxygen Vacancies of 2D-InOx Fabricated by Liquid Metal Printing via Temperature Modulation DOI Creative Commons
Kuan‐Hung Chen,

Chang-Hsun Huang,

Chen-Chih Hsiang

и другие.

The Journal of Physical Chemistry C, Год журнала: 2024, Номер 128(12), С. 5355 - 5365

Опубликована: Март 16, 2024

In our study, we introduce a novel concept concerning the formation of oxygen vacancies at varying temperatures during oxide skin in liquid metal. Specifically, by adjusting 2D-InOx printing temperatures, successfully regulated concentration specific defects, unveiling decrease higher temperatures. Employing comprehensive suite analytical techniques, present swift and efficient method for producing while simultaneously evaluating its internal defect content both macroscopic microscopic levels. Furthermore, employed electron energy loss spectroscopy (EELS) scans proximity grain boundaries, enabling us to effectively probe fluctuation vacancy between these boundaries interior grains. Our findings underscore notable accumulation boundaries. Notably, capacity manipulate through temperature adjustments enhances significance investigation, offering valuable insights into 2D memristor materials their potential role development memory devices based on 2D-InOx.

Язык: Английский

Процитировано

0
Surface chemistry altering electronic behaviour of liquid metal-derived tin oxide nanosheets DOI

Xiaotian Wei,

Chung Kim Nguyen, Patrick D. Taylor

и другие.

Nanoscale, Год журнала: 2024, Номер 16(28), С. 13551 - 13561

Опубликована: Янв. 1, 2024

Interactions between solvents with surface Sn atoms are unravelled experimentally and theoretically for impacting the electronic properties of 2D SnO 2 nanosheets.

Язык: Английский

Процитировано

0
2D C‐Axis‐Aligned Crystalline In─S─O Transistors Processed from Aqueous Solution DOI Creative Commons
Wangying Xu,

Jierui Lin,

Yanwei Li

и другие.

Advanced Electronic Materials, Год журнала: 2024, Номер unknown

Опубликована: Июль 28, 2024

Abstract There is a growing interest in exploring nanometer‐thin 2D oxide semiconductor transistors for future scaled and multifunctional (e.g., ultraflexible high transparency) devices. However, further development hindered due to the degraded device performance with channels use of costly vacuum‐based techniques. Here, (2.7 nm thick) c‐axis‐aligned crystalline In─S─O channel material processed from aqueous solution reported. The based on Si/SiO 2 substrates exhibit mobility ( µ ) 22.15 cm V −1 s , on/off current ratio I / off ≈10 7 good bias stress stability. Detailed investigations show that this achievement attributed highly structure, well‐designed material, atomically smooth surface. Furthermore, integrated an sol‐gel‐derived 6 thick high‐ k ZrO insulator. all‐aqueous‐solution‐based quasi‐2D In─S─O/ZrO devices 15.65 ─1 low operating voltage 1.5 V. This wide‐bandgap opens tremendous opportunities multifunctional, ultra‐scaled low‐cost electronics.

Язык: Английский

Процитировано

0