High‐Entropy Liquid Metal Process for Transparent Ultrathin p‐Type Gallium Oxide

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 12, 2025

Abstract The naturally self‐limiting oxide formed on the surface of liquid metals can be exfoliated and transferred onto various substrates. This layer with a thickness few nanometers is typically highly transparent engineered for applications in large‐area optoelectronics. While incorporation solvated elements into interfacial post‐transition metal‐based demonstrated n ‐doping, achieving p ‐doping such ultrathin layers remains significant challenge. In this study, use dissolved indium (In), platinum (Pt), gold (Au), palladium (Pd), copper (Cu) gallium (Ga)‐based alloys investigated to create high‐entropy metal system. allows exfoliation p‐ doped layer, predominantly composed (Ga 2 O 3 ). these system results their atomic dispersion, Cu exhibiting limited presence. atomically dispersed Pt, Au, Pd scavenge oxygen during at moderate temperatures release them cooling down, promoting emergence trivalent metallic Ga layer. work presents novel doping strategy achieve ‐doped liquid‐metal‐derived layers, which maintain high transparency.

Язык: Английский

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Self‐Embedded Schottky Junctions in Liquid‐Metal‐Derived 2D Oxides for Fast and Selective Room‐Temperature H₂ Sensing

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Апрель 4, 2025

Abstract Semiconductor‐based hydrogen sensors provide cost‐efficient solutions for safety and a circular hydrogen‐based economy. Liquid metal‐derived 2D metal oxides show promise as ultrathin sensing materials. However, conventional exfoliation inevitably introduces metallic resides, which are often removed post‐synthesis. Here the residual indium nano‐islands strategically retained within annealed In 2 O 3 layers, creating self‐embedded Schottky junctions. This unique architecture enhances gas‐solid coupling at In/In interfaces. Tuning composition spatial distribution of amplifies thermionic electron emission across barriers. The resulting sensor achieves room‐temperature detection with rapid response time 4.4 s, high 3.4, >2.5 selectivity against common interferents. Remarkably, it exhibits only 6.7% performance deviation after 6 weeks shows good humidity resistance. These merits underscore potential material method addressing formidable challenge in developing high‐performance sensors.

Язык: Английский

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Effect of Zn Concentration in Zinc-Doped 2D Layered Indium Oxides for Room-Temperature Optoelectronic Sensing of NO₂

ACS Applied Nano Materials, Год журнала: 2025, Номер unknown

Опубликована: Апрель 15, 2025

Язык: Английский

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Structural and Electronic Properties of Corundum and Monoclinic (Al_1‐xIn_x)₂O₃ Alloys by First‐Principles

Advanced Theory and Simulations, Год журнала: 2025, Номер unknown

Опубликована: Май 7, 2025

Abstract Ga 2 O 3 ultrawide bandgap semiconductors have garnered significant attention in recent years due to their ultra‐wide bandgap. In this study, the alternative III‐oxide material using indium and aluminum mixing form (Al 1‐x x ) alloy (AlInO) is systematically investigated hybrid density functional theory calculations. The lattice constants, bandgaps bowing parameter are for both corundum monoclinic AlInO, with In‐content ranging from 0 100%. A notable decrease energy of Al observed increase content, providing a wide tuning range 5.59 eV (corundum)/4.79 (monoclinic). addition, results band alignment present type‐I/type‐II offset AlInO/β‐Ga structure among entire composition range. AlInO ranges 7.93 2.77 7.89 2.84 which conduction position exhibits sharp upward becomes dominant tuning. Overall, work indicated that alloys can potentially serve as lattice‐matched materials β ‐Ga electronic optoelectronic applications, promising surface interface characteristics merit further exploration.

Язык: Английский

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Vacuum-Free Liquid-Metal-Printed 2D Semiconducting Tin Dioxide: The Effect of Annealing

ACS Applied Electronic Materials, Год журнала: 2024, Номер unknown

Опубликована: Фев. 12, 2024

Thin film transistors (TFTs) offer unparalleled opportunities for the fabrication of multifunctional electronic and optoelectronic devices. In this work, we report a vacuum-free liquid metal exfoliation technique rapidly printing ∼2 nm-thick layer oxide from molten tin. We explore effect rapid thermal annealing at 450 °C on stoichiometry, morphology, crystal structure resulting tin nanosheets. The annealed samples exhibit dominant SnO2 phase high degree transparency (>99%) in visible spectra. Field-effect based two-dimensional (2D) films show typical n-channel conduction with field-effect mobility ∼7.5 cm2 V–1 s–1. Photodetectors utilizing dioxide demonstrate significant improvement photoresponsivity reaching value 5.2 × 103 A W–1 compared to that found an unannealed sample ultraviolet wavelength 285 nm. device performance is due nanocrystalline changes within layers during process. This work offers straightforward ambient air-compatible method depositing ultrathin, large-area semiconducting oxides as potential candidates enabling emerging applications transparent nanoelectronics optoelectronics.

Язык: Английский

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Sub-5 nm ultrathin IGO film transistor printed by micro-doped InGa liquid alloy

Applied Surface Science, Год журнала: 2024, Номер 663, С. 160131 - 160131

Опубликована: Апрель 20, 2024

Язык: Английский

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Plasmonic Gold Nanoparticle-Decorated Ultrathin SnO₂ Nanosheets with Superior Ultraviolet and Visible Photoresponsivity

ACS Applied Nano Materials, Год журнала: 2024, Номер 7(10), С. 11184 - 11194

Опубликована: Май 14, 2024

Ultrathin transparent semiconducting oxides have attracted considerable attention in multifunctional electronic and optoelectronic devices, owing to their exciting physical properties excellent stability. However, due wide bandgap, absorption the visible region is very limited. Here, we show enhanced light–matter interactions by integrating plasmonic gold nanoparticles onto ultrathin SnO2 nanosheets, leading higher optical spectra. In this work, a vacuum-free liquid metal printing technique used deposit large-area ∼1.9 nm thick which were then decorated with utilizing an electrostatic self-assembly technique. The enhancement of electric field localized surface plasmon resonance plasmon-induced hot electron generation at Au–SnO2 interface verified COMSOL simulations. Moreover, experimental observations fabricated photodetectors based on hybrid structure demonstrate broadband spectral response ranging from ultraviolet wavelengths. particular, observe improved room temperature photoresponsivity ∼950 mA W–1 17-fold photocurrent 400 wavelength as compared bare SnO2. This work provides viable route tune bandgap 2D functional oxides, making them attractive for nanoscale devices.

Язык: Английский

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Synthesis and Selenization of Thickness-Controllable In₂O₃ Films by Printed Oxide Skin of Liquid Metals

ACS Applied Electronic Materials, Год журнала: 2023, Номер 5(2), С. 1088 - 1096

Опубликована: Фев. 17, 2023

Indium oxide (In2O3) has been reported widely due to its good optical properties and stability in optoelectronics other fields. However, it is difficult realize thickness control of atomically thin In2O3, which will confine the use In2O3 films. Here, we report a simple precise method synthesize thickness-controllable films using printed skin liquid metals. The cleaning processes were investigated remove metal residues on It was found that washing annealing procedures could without damaging thus improve uniformity. At same time, controlled by adjusting oxygen concentration atmosphere. Furthermore, band gap regulation indium realized thickness, provided basis for selenization

Язык: Английский

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Adaptive Convolutional Neural Networks for Enhanced Memory Retention and Restoration in Optoelectronic Vision Devices

Advanced Intelligent Systems, Год журнала: 2023, Номер 5(8)

Опубликована: Апрель 18, 2023

Optoelectronic devices based on optically responsive materials have gained significant attention due to their low cross talk and reduced power consumption. These rely light‐induced changes in conductance states, which are used create synaptic weights for image recognition tasks neural networks. However, a major drawback of such is the rapid decay states after light stimulus removal, hinders long‐term memory performance without continuous external place. To address this issue, platform network scheme proposed counter natural optoelectronic devices. The approach restores effect significantly enhances by several orders magnitude using additional energy‐intensive techniques like training pulses or gate fields. Herein, model validated experimentally fabricated with two different materials, BP doped In 2 O 3 , demonstrates restoration memory/image retention ability any material system being studied synapses vision. This has important implications practical application neuromorphic visual processing technologies, bringing them closer real‐world applications.

Язык: Английский

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Probing the Interaction between Individual Metal Nanocrystals and Two-Dimensional Metal Oxides via Electron Energy Loss Spectroscopy

Nano Letters, Год журнала: 2024, Номер 24(6), С. 1944 - 1950

Опубликована: Фев. 2, 2024

Metal nanoparticles can photosensitize two-dimensional metal oxides, facilitating their electrical connection to devices and enhancing abilities in catalysis sensing. In this study, we investigated how individual silver interact with tin oxide antimony-doped indium using electron energy loss spectroscopy (EELS). The measurement of the spectral line width longitudinal plasmon resonance absence presence 2D materials allowed us quantify contribution chemical interface damping width. Our analysis reveals that a stronger interaction (damping) occurs due its highly homogeneous surface. results study offer new insight into between materials.

Язык: Английский

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