Highly stable mixed-phase Cs-Cu-I films with tunable optoelectronic properties for UVB photodetector applications DOI Creative Commons
Dan Tian,

Shunli He,

Lichun Zhang

и другие.

Optics Express, Год журнала: 2024, Номер 32(6), С. 9227 - 9227

Опубликована: Фев. 2, 2024

Ultraviolet (UV) photodetector plays an important role in military, civilian and people's daily life, is indispensable part of spectral detection. However, photodetectors target at the UVB region (280-320 nm) are rarely reported, devices detected by medium-wave UV light generally have problems such as low detection rate, sensitivity, poor stability, which difficult to meet market application needs. Herein, Cs-Cu-I films with mixed-phase been prepared vacuum thermal evaporation. By adjusting proportion evaporation sources (CsI CuI), optical bandgaps can be tuned between 3.7 eV 4.1 eV. This absorption cut-off edge exactly both ends band, indicating its potential field Finally, based on Cs-Cu-I/n-Si heterojunction fabricated. The shows good selectivity for has a photoresponsivity 22 mA/W, specific detectivity 1.83*10 11 Jones, EQE over 8.7% on/off ratio above 20 .

Язык: Английский

High stability self-powered Bi2O3 based ultraviolet photodetector with p-i-n heterojunction DOI
Christian Lång,

Xingyuan Yu,

Hua Tang

и другие.

Journal of Alloys and Compounds, Год журнала: 2025, Номер unknown, С. 180208 - 180208

Опубликована: Апрель 1, 2025

Язык: Английский

Процитировано

0

Vertical Pyro‐Phototronic Effect and Lateral Photothermoelectric Effect in Perovskite Single Crystals‐Based Photodetector for Narrowband and Broadband Dual‐Modal Optical Communications DOI

Wenzhi Hu,

Rui Yan, Yunxia Ma

и другие.

Laser & Photonics Review, Год журнала: 2025, Номер unknown

Опубликована: Апрель 10, 2025

Abstract Creating dual‐modal metal halide perovskite (MHP)‐based photodetectors (PDs) capable of working in either broadband or narrowband modes would enhance optical communication systems. However, challenges such as complex fabrication, and limited detection range (<900 nm) still exist. Herein, self‐powered, PDs‐based on MHPs are demonstrated, which integrate vertical interfacial pyro‐phototronic effect (IPPE) lateral photothermoelectric (PTEE), via doping these crystals with Ag+ integrating wide spectrum absorber. The high‐performance photodetection results from charge collection narrowing (CCN)‐assisted IPPE, enabling light specific wavelength to penetrate into the interface, high carrier separation efficiency temperature rise. In PD, metamaterial absorbers counter electrodes improved photothermal conversion expanded absorption, achieving ultra‐broadband responses 360 2200 nm. By changing type MHP single (SCs), response band PD can be modulated purple red light, while maintaining capability. is fully used achieve double encryption during signal transmission. work offers a promising approach for designing multi‐modal PDs wireless data security, applicable imaging, biomedical, intelligent sensing.

Язык: Английский

Процитировано

0

Broadband-Detection and Low-Operating-Voltage Photodetectors Based on Metal Oxide/Perovskite Quantum Dot Heterojunctions DOI

Dalong Ge,

Jiaqi Xu, Tian Tian

и другие.

The Journal of Physical Chemistry Letters, Год журнала: 2025, Номер unknown, С. 4449 - 4455

Опубликована: Апрель 25, 2025

To achieve comprehensive environmental monitoring, photodetectors with broad operational wavelength range are crucial for capturing realistic wide-spectrum signals and supporting integrated system operations. This study presents a high-performance photodetector based on InSrO nanofiber (NF)/CsPbBr3 quantum dot (QD) heterojunctions, achieving broadband detection (230-500 nm) ultralow operating voltage (0.05 V). By synergistically combining the UV absorption of NFs visible-light sensitivity CsPbBr3 QDs, device exhibits responsivity 6.88 A·W-1 detectivity 6.39 × 1014 Jones. Systematic analysis reveals that heterointerface facilitates efficient charge separation, while 1D architecture enhances directional carrier transport. Notably, can retain 95% initial photocurrent after 15 days, demonstrating exceptional stability. work advance development energy-efficient optoelectronic devices monitoring optical communications applications.

Язык: Английский

Процитировано

0

High‐Gain PMMA‐Modified Graphene Photodetectors for Dual‐Wavelength Secure Communication Utilizing Distinct Temporal Photoresponses DOI Creative Commons

Jinhua Wu,

Hao Sun, Ruiling Zhang

и другие.

Advanced Science, Год журнала: 2025, Номер unknown

Опубликована: Май 11, 2025

Abstract Photodetectors exhibiting oppositive polar responses at two different wavelengths have been used extensively for secure optical communication. However, current technologies are susceptible to signal cancellation and cross‐talk, due the time‐independent of equal strengths. In this study, a encryption system based on PMMA‐modified graphene (PMG) photodetector is demonstrated that shows remarkable wavelength‐dependent temporal responses: PMG detector largely constant response longer than 580 nm, while linear time dependence shorter wavelengths. It found qualitatively attributed photogating effects PMMA‐mediated oxygen desorption process, respectively. Moreover, device achieves exceptionally large normalized‐gain values 2.18 × 10 −3 m 2 V −1 2.97 −‍5 ‍m −‍1 cases, respectively, both surpassing previously reported by an order magnitude bipolar responsive photodetectors in ambient conditions. By harnessing these distinct photoresponses as encrypted key signals wavelengths, effective communication enhances recovery avoids cancellation. The research introduces straightforward yet efficient structural design with temporally specific represents significant advancement field

Язык: Английский

Процитировано

0

Novel high-gain and high-speed SnO2/AlGaN ultraviolet heterojunction phototransistor DOI Open Access
Xing Chen, Zesheng Lv, Hao Jiang

и другие.

Journal of Physics Conference Series, Год журнала: 2025, Номер 3008(1), С. 012063 - 012063

Опубликована: Май 1, 2025

Abstract A SnO 2 /AlGaN ultraviolet heterojunction phototransistor, which achieves high gain and fast speed based on longitudinal lateral confinement of photogenerated holes, was proposed developed in this work. The orthogonal transport mechanism holes enhanced the localization effect at base meanwhile reduced recombination electrons there, thereby lowered barrier promoted electron transport, resulting response. fabricated devices showed a small dark current lower than 10 pA below 20 V bias, an ultra-high 2.2×10 5 under 315 nm illumination, very large photo-to-dark ratio 1.5×10 8 V, prompt impulse response with rise /fall time 1.2 μs/91.1 μs.

Язык: Английский

Процитировано

0

Bias‐Induced Gradient Bandgap of Bulk Perovskite Boosting Built‐In Electric Fields for High‐Performance Self‐Powered Photodetectors DOI
Yuchen Miao, Sheng Li, Jun Wu

и другие.

Laser & Photonics Review, Год журнала: 2024, Номер unknown

Опубликована: Окт. 26, 2024

Abstract Self‐powered photodetectors (PDs) have gained significant attention in recent years due to their ability operate without external power. Strengthening the built‐in electric field ( E bi ) of these devices is crucial for efficient carrier separation and transport. However, disordered energy level arrangement within mixed halide perovskites (MHP) often conflicts with levels constructed by interface, weakening thus affecting performance self‐powered PDs. In this study, a bias‐induced gradient bandgap bulk MHP proposed high‐performance photodetectors. The vector superposition interface significantly boosts device, providing powerful driving force transport photogenerated carriers. obtained device exhibits exceptional performance, including an ultra‐fast response time 1.14/1.75 µs, large specific detectivity 7.27 × 10 12 cm Hz 1/2 W −1 , ultra‐high responsivity 0.49 A quantum efficiency 93.5% at 0 V bias. Furthermore, strategy also demonstrated lateral structure photodetector. This work offers valuable guidance achieving MHP‐based PDs through optimization.

Язык: Английский

Процитировано

1

Highly stable mixed-phase Cs-Cu-I films with tunable optoelectronic properties for UVB photodetector applications DOI Creative Commons
Dan Tian,

Shunli He,

Lichun Zhang

и другие.

Optics Express, Год журнала: 2024, Номер 32(6), С. 9227 - 9227

Опубликована: Фев. 2, 2024

Ultraviolet (UV) photodetector plays an important role in military, civilian and people's daily life, is indispensable part of spectral detection. However, photodetectors target at the UVB region (280-320 nm) are rarely reported, devices detected by medium-wave UV light generally have problems such as low detection rate, sensitivity, poor stability, which difficult to meet market application needs. Herein, Cs-Cu-I films with mixed-phase been prepared vacuum thermal evaporation. By adjusting proportion evaporation sources (CsI CuI), optical bandgaps can be tuned between 3.7 eV 4.1 eV. This absorption cut-off edge exactly both ends band, indicating its potential field Finally, based on Cs-Cu-I/n-Si heterojunction fabricated. The shows good selectivity for has a photoresponsivity 22 mA/W, specific detectivity 1.83*10 11 Jones, EQE over 8.7% on/off ratio above 20 .

Язык: Английский

Процитировано

0