ACS Applied Electronic Materials, Год журнала: 2024, Номер unknown
Опубликована: Окт. 28, 2024
Язык: Английский
ACS Applied Electronic Materials, Год журнала: 2024, Номер unknown
Опубликована: Окт. 28, 2024
Язык: Английский
Advanced Science, Год журнала: 2024, Номер 11(38)
Опубликована: Июль 24, 2024
This study enhances the ultrafast photonics application of tin selenide (SnSe) nanoflakes via copper (Cu) functionalization to overcome challenges such as low conductivity and weak near-infrared (NIR) absorption. Cu concentration, induces strain, reduces bandgap through Sn substitution vacancy filling with ions. Demonstrated by density functional theory calculations experimental analyses, Cu-functionalized SnSe exhibits improved NIR optical absorption superior third-order nonlinear properties. Z-scan measurements femtosecond transient spectroscopy reveal better performance in terms properties shorter carrier relaxation times compared pristine SnSe. Furthermore, saturable absorbers based on both types, when integrated into an erbium-doped fiber laser, show that leads a decrease pulse duration 798 fs increase 3 dB spectral bandwidth 3.44 nm. Additionally, it enables stable harmonic mode-locking bound-state solitons. work suggests new direction for improving wide 2D materials highlighting enhanced potential photonics.
Язык: Английский
Процитировано
7Small, Год журнала: 2025, Номер unknown
Опубликована: Янв. 12, 2025
Abstract The manufacturing of thin films through selective laser sintering micro/nanoparticles is an emerging technology that has been developing rapidly over the last two decades owing to its digitization, efficiency, and good adaptability various materials. However, high‐quality different materials remains a challenge: ceramic particles are difficult be sintered due low absorbance; metallic prone oxidation; semiconductor process for performance enhancement high stress. In this work, new approach proposed employs additional Indium Tin Oxide (ITO) sacrificial layer assist functional materials, which detaches after without contaminating target material. As absorber, ITO can raise temperature up 2950 K, resulting in well coarsening grains. oxygen barrier, maintains oxidation level metal die below 25%. homogenizer, delays cracking improves material, turn increases Seebeck factor 1.4‐fold. Therefore, material‐friendly, purity‐neutral strategy, supports multi‐materials high‐performance thin‐film devices.
Язык: Английский
Процитировано
1Advanced Materials, Год журнала: 2025, Номер unknown
Опубликована: Фев. 17, 2025
Abstract 2D conjugated metal‐organic frameworks (MOFs) have attracted significant attention in various fields due to their outstanding characteristics. However, the strong interlayer π–π stacking interactions, preparation of high‐quality and atomic‐scale single‐crystalline MOF structures continues pose a challenge. The investigation its nonlinear optical (NLO) property application for ultrafast photonics is still rare. Herein, ultrathin Cu 3 (HHTP) 2 Ni (HHTP = 2,3,6,7,10,11‐hexahydroxytriphenylene) nanosheets (CuHHTPNs NiHHTPNs) with characteristic are prepared by surfactant‐assisted solution synthesis strategy. Moreover, stacked CuHHTPNs(NiHHTPNs)/graphene van der Waals heterostructures (CuNsG‐VHS NiNsG‐VHS) achieved ultrasound‐assisted method. According characterization analyses theoretical simulations, this preferable exhibits superior π‐conjugated electron cloud extension, charge transfer, NLO properties. Noticeably, third‐order polarizability CuNsG‐VHS keeps relatively high level compared reported saturable absorber materials near‐infrared wavelength range. Based on these properties, can serve as an excellent achieve fundamental mode‐locking femtosecond pulse duration, high‐order harmonic GHz repetition frequency. These demonstrations provide valuable strategy development promising MOFs advanced optoelectronic devices.
Язык: Английский
Процитировано
0ACS Applied Nano Materials, Год журнала: 2025, Номер unknown
Опубликована: Март 17, 2025
Язык: Английский
Процитировано
0Chaos Solitons & Fractals, Год журнала: 2025, Номер 198, С. 116581 - 116581
Опубликована: Май 13, 2025
Язык: Английский
Процитировано
0Optical Materials, Год журнала: 2024, Номер unknown, С. 116628 - 116628
Опубликована: Дек. 1, 2024
Язык: Английский
Процитировано
1ACS Applied Electronic Materials, Год журнала: 2024, Номер unknown
Опубликована: Окт. 28, 2024
Язык: Английский
Процитировано
0