High-efficiency self-powered perovskite photodetector with an electron-enhancing SnO2/WS2 double electron transport layer DOI

Vo Pham Hoang Huy,

Chung Wung Bark

Journal of Materials Chemistry C, Год журнала: 2024, Номер unknown

Опубликована: Дек. 16, 2024

In this study, we report the enhancement of device performance based on perovskite photoactivity using a SnO 2 /WS double electron transport layer (ETL).

Язык: Английский

Liquid phase deposition of defect-controlled SnO2 electron transport layers with functional ions for CsPbI2Br inorganic self-powered photodetectors DOI

So-Un Kim,

Sang Hyuk Im

Journal of Alloys and Compounds, Год журнала: 2025, Номер unknown, С. 179134 - 179134

Опубликована: Фев. 1, 2025

Язык: Английский

Процитировано

0
Layered lead-free perovskite memristors with ultrahigh on/off ratio DOI

Meiqi An,

Conghui Tan,

Hengshan Wang

и другие.

Applied Surface Science, Год журнала: 2025, Номер unknown, С. 163317 - 163317

Опубликована: Апрель 1, 2025

Язык: Английский

Процитировано

0
Seed crystal layer-assisted growth of CsPbBr3 Perovskite Film via electro-spray deposition for sensitive direct X-ray detection DOI
Haomiao Li, Bo Jiao, Ma Yan

и другие.

Organic Electronics, Год журнала: 2025, Номер unknown, С. 107261 - 107261

Опубликована: Апрель 1, 2025

Язык: Английский

Процитировано

0
Six‐Inch High‐Purity Lead Halide Perovskite Wafer Derived from Ceramic Manufacturing Technique DOI
Shilin Liu,

Yijing Ding,

Yuwei Li

и другие.

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Май 12, 2025

Abstract Lead halide perovskites exhibit exceptional optoelectronic properties but face industrialization barriers due to the inability fabricate large‐area, high‐quality wafers. Inspired by ceramic manufacturing techniques, a 6‐inch high‐purity perovskite wafer is developed, achieving carrier mobility, lifetime, and defect concentrations comparable single crystals. This method demonstrates universality across diverse enables heterojunction wafers, marking significant progress in dynamics control. As result, an X‐ray sensing array with 256 × pixels constructed using 10 cm 2 wafer, which exhibits sensitivity of 36532 µCGy air −1 −2 low detection limit 139 nGy s , superior those single‐crystal detector (10640 247 ). breakthrough establishes scalable pathway industrial‐scale optoelectronics, overcoming critical while enabling high‐performance radiation imaging systems through wafer‐level heterostructure engineering.

Язык: Английский

Процитировано

0
A Self-Powered p-CuO/n-Si Heterojunction-Type Ultraviolet Photodetector DOI

Runmin Wu,

Hailin Yang, Yiping Cheng

и другие.

ACS Applied Nano Materials, Год журнала: 2025, Номер unknown

Опубликована: Июнь 2, 2025

Язык: Английский

Процитировано

0
High-efficiency self-powered perovskite photodetector with an electron-enhancing SnO2/WS2 double electron transport layer DOI

Vo Pham Hoang Huy,

Chung Wung Bark

Journal of Materials Chemistry C, Год журнала: 2024, Номер unknown

Опубликована: Дек. 16, 2024

In this study, we report the enhancement of device performance based on perovskite photoactivity using a SnO 2 /WS double electron transport layer (ETL).

Язык: Английский

Процитировано

1