Exploring the promoting effect of lanthanum passivation on the photovoltaic performance of CZTSSe solar cells DOI
Yun Zhao,

Fengxia Yang,

Zhengjun Luo

и другие.

The Journal of Chemical Physics, Год журнала: 2024, Номер 161(23)

Опубликована: Дек. 16, 2024

The significant open-circuit voltage (VOC) deficit poses a major obstacle to enhancing the efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Interface passivation emerges as potent strategy regulate carrier transport and boost performance. Here, we innovatively introduced rare-earth lanthanum (La) passivate absorber interface by directly treating absorption layer surface with an aqueous La3+ ion solution. This approach effectively minimizes defect concentrations mitigates Fermi-level pinning effects. Notably, VOC markedly increases from 406 456 mV after La treatment. Consequently, power conversion soars 6.78% (VOC = mV, JSC 29.95 mA/cm2, FF 55.28%) for reference cell 7.89% 451 30.12 59.56%) optimized La-processed cell. groundbreaking work opens up novel avenue advancing CZTSSe performance, offering promising implications future thin-film photovoltaic technology.

Язык: Английский

Achieving high open-circuit voltage in efficient kesterite solar cells via lanthanide europium ion induced carrier lifetime enhancement DOI

Xingye Chen,

Yunhai Zhao,

Nafees Ahmad

и другие.

Nano Energy, Год журнала: 2024, Номер 124, С. 109448 - 109448

Опубликована: Март 4, 2024

Язык: Английский

Процитировано

44

A bending test protocol for characterizing the mechanical performance of flexible photovoltaics DOI
Kenjiro Fukuda, Lulu Sun, Baocai Du

и другие.

Nature Energy, Год журнала: 2024, Номер 9(11), С. 1335 - 1343

Опубликована: Окт. 18, 2024

Язык: Английский

Процитировано

12

Current Status and Future Prospects of Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) Thin Film Solar Cells Prepared via Electrochemical Deposition DOI Creative Commons
Sun Kyung Hwang,

Joo Ho Yoon,

Jin Young Kim

и другие.

ChemElectroChem, Год журнала: 2024, Номер 11(9)

Опубликована: Фев. 9, 2024

Abstract The fabrication of kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin‐film solar cells using the electrochemical deposition (ED), which is valued for its industrial feasibility, offers a cost‐effective and environmentally friendly approach to carbon‐free clean energy production. However, reported power conversion efficiency approximately 10 % electrodeposited CZTSSe lower compared alternative methods like sputtering spin‐coating, mainly attributed phase inhomogeneity rough morphology generated during ED process. Ensuring microscopic macroscopic uniformity films crucial improvement film quality device performances. In this review, strategies address these challenges including intrinsic control such as mode, pH, concentration metal ions, complexing agents, well extrinsic approaches doping, substitution elements, introduction interfacial layers. addition, prospects electrochemically deposited were presented, focusing on promising applications in tandem, flexible, water‐splitting devices. Finally, review will provide technical insights into process preparing cells, outlining perspective future development highly efficient thin cells.

Язык: Английский

Процитировано

8

Defect Synergistic Regulations of Li&Na Co‐Doped Flexible Cu2ZnSn(S,Se)4 Solar Cells Achieving over 10% Certified Efficiency DOI Creative Commons
Quanzhen Sun, Shi Chen, Weihao Xie

и другие.

Advanced Science, Год журнала: 2023, Номер 11(6)

Опубликована: Дек. 6, 2023

Abstract Ion doping is an effective strategy for achieving high‐performance flexible Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells by defect regulations. Here, a Li&Na co‐doped applied to synergistically regulate defects in CZTSSe bulks. The quality absorbers with the uniformly distributed Li and Na elements are obtained using solution method, where acetates (LiAc NaAc) as additives. concentration of harmful Zn anti‐site decreased 8.13% after incorporation, that benign increased 36.91% incorporation. Synergistic co‐doping enhances carrier reduces interfacial one order magnitude. As result, cell achieves power conversion efficiency ( PCE ) 10.53% certified 10.12%. Because high homogeneous property, device fabricated large area (2.38 cm obtains 9.41% . investigation provides new perspective efficient cells.

Язык: Английский

Процитировано

10

Plasma treatment modifying back interface to achieve flexible Cu2ZnSn(S, Se)4 solar cells with 10.59% efficiency DOI
Caixia Zhang,

Wen Wu Xu,

Quanzhen Sun

и другие.

Applied Surface Science, Год журнала: 2025, Номер 692, С. 162738 - 162738

Опубликована: Фев. 20, 2025

Язык: Английский

Процитировано

0

Overcoming Back Interfacial Barrier Improves Flexible Cu2ZnSn(S,Se)4 Solar Cell Efficiency via CuO Sacrificial Layers DOI
Zhenyi Su, Weihao Xie, Quanzhen Sun

и другие.

ACS Materials Letters, Год журнала: 2025, Номер unknown, С. 1329 - 1335

Опубликована: Март 12, 2025

Язык: Английский

Процитировано

0

Interfacial Bridge Bonding Enables High‐Efficiency Sb2(S,Se)3 Solar Cells with Record Fill Factor Exceeding 73% DOI Open Access

Xiaoqi Peng,

Zhentao Ma,

Zixu He

и другие.

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 27, 2025

Abstract For solar cells, interfacial chemical coordination, carrier transport, and energy alignment play critical roles in transport determine the final conversion efficiency. As an emerging technology, high‐efficiency Sb 2 (S,Se) 3 cells typically utilize cadmium sulfide (CdS) as electron layer. However, poor electrical contact between F‐doped SnO (FTO) substrate CdS presents a significant challenge to improving device performance. Here, ultrathin layer is introduced, fabricated via bath deposition, FTO address coordination problem. The non‐invasive depth analysis based on synchrotron radiation X‐ray photoelectron spectroscopy shows that this engineering approach facilitates formation of S‐Sn bonding at FTO/CdS interface, which cannot be achieved conventional inert surface. Additionally, existence reduces sulfur vacancy defect (V S ) films, enhancing both conductivity crystallinity. Therefore, cell demonstrates significantly enhanced separation Ultimately, achieve record fill factor exceeding 73%, with championefficiency 10.58%. This study effective strategy enhance charge properties for high‐performance cells.

Язык: Английский

Процитировано

0

Regulating the NaSex-assisted crystallization of Cu2ZnSn(S,Se)4 film by modifying the reaction between Na source and Se in co-selenization process DOI
Chao Gao,

Yuzhou Sun,

Tong Wu

и другие.

Solar Energy Materials and Solar Cells, Год журнала: 2025, Номер 292, С. 113771 - 113771

Опубликована: Май 31, 2025

Язык: Английский

Процитировано

0

Band gap engineering and electronic structure of Cu2Ni(Sn,Ge,Si)Se4 kesterites: A DFT perspective on new earth-abundant semiconductors for high-performance photovoltaics DOI

Iskandar Raufov,

Dilshod Nematov,

Saidjaafar Murodzoda

и другие.

Next Materials, Год журнала: 2025, Номер 8, С. 100786 - 100786

Опубликована: Июнь 2, 2025

Язык: Английский

Процитировано

0

11.88% Efficient Flexible Ag‐Free CZTSSe Solar Cell: Spontaneously Tailoring the Alkali Metal Level DOI Open Access
Xu Han,

Rutao Meng,

Xuejun Xu

и другие.

Small, Год журнала: 2024, Номер unknown

Опубликована: Окт. 12, 2024

Abstract Alkali metal is the requirement for highly efficient Cu 2 ZnSn(S, Se) 4 (CZTSSe) solar cells, thus it crucial to additionally incorporate alkali into absorber layer flexible cells. However, efficiency of CZTSSe devices reported date, based on conventional incorporation strategies, still lags behind those made rigid substrates. One main issues inability control content and distribution in layer. Here, a facile alkaline approach proposed, effectively regulating metals film. Such method can spontaneously tailor proper level, leading suppression non‐radiative recombination better carrier transport through enhanced film quality optimized band binding structure. Finally, champion cell with an 11.88% achieved, highest without noble Ag doping. This study affords innovative spontaneous alkali‐doping design preparation high‐performance cells provides deeper insight extent

Язык: Английский

Процитировано

2