Recent Advances in Interfacial Engineering for High-Efficiency Perovskite Photovoltaics

DeCarbon, Год журнала: 2025, Номер unknown, С. 100107 - 100107

Опубликована: Март 1, 2025

Язык: Английский

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Mitigating Face‐Sharing Octahedral Impurity Phases for Efficient FA‐Based Perovskite Photovoltaics

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 3, 2025

Abstract Formamidinium (FA) based perovskites have emerged as one of the most promising light‐absorber layers for both single‐junction and advanced top‐cell tandem photovoltaics, owing to their precisely engineered electronic bandgap exceptional stability. However, because mismatch FA cation intricate crystallization FA‐based perovskite, formation an impurity phase is inevitable, which reduces efficiency Herein, a N‐Phenyl‐bis(trifluoromethanesulfonimide) (NPTFSI)‐assisted method presented mitigate phase, i.e., face‐sharing octahedra, achieve pure stable perovskite. Comprehensive characterization shows that addition NPTFSI increases energy octahedra while reducing corner‐sharing. This effectively suppresses in perovskite films. Suppressing these octahedral phases not only enhances stability films under heating or humidity conditions but also improves carrier dynamics. Finally, champion devices deliver significantly enhanced from 23.23% 25.74%. Moreover, PSCs exhibit excellent stability: retain 96% initial after over 500 h maximum power point test.

Язык: Английский

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Strategies to promote the certified efficiency of inverted perovskite solar cells above 24%: A review

Опубликована: Апрель 1, 2025

Язык: Английский

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Heterojunction Interface Anomalous High‐Energy Level Insertion Modulating Carrier Dynamics in High‐Efficiency Antimony Selenide Thin‐Film Solar Cells

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Май 13, 2025

Abstract 1D antimony selenide (Sb 2 Se 3 ) films are commonly used as absorber layers in high‐efficiency thin‐film solar cells due to their excellent optoelectronic properties. However, the performance of Sb is severely limited by serious carrier recombination. Exploring effective recombination and transport regulation crucial enhancing cells. In this work, unlike previously reported conventional gradient band structures, a high‐energy‐level ultrathin amorphous tin oxide layer (SnO deposited atomic deposition an interfacial inserted at cadmium sulfide (CdS)/Sb heterojunction. Unlike layers, SnO interface does not exhibit significant ion diffusion heterojunction interface. Notably, results indicate that can promote [ hk 1] orientation, thereby orientation‐induced transport. Furthermore, significantly reduce both bulk defects, improve extraction, decrease This leads improved collection. Ultimately, cell with efficiency 9.73% achieved based on enhanced increased lifetime, optimized alignment. work also provide theoretical technical support for sustainable development

Язык: Английский

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Distinct rubrene/CsPbI2Br interfacial energetics on spin-coated and vacuum evaporated perovskite films

Applied Surface Science, Год журнала: 2025, Номер unknown, С. 163663 - 163663

Опубликована: Май 1, 2025

Язык: Английский

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