N‐Type Doping Characteristics Enabled by 1D Perovskite for Advancing Perovskite Photovoltaics: From 1.55 to 1.85 eV Bandgap DOI

Xianfang Zhou,

Fei Wang,

Yonggui Sun

и другие.

Advanced Energy Materials, Год журнала: 2025, Номер unknown

Опубликована: Май 15, 2025

Abstract Developing low‐dimensional perovskites to enhance both single‐junction and tandem solar cells is of great interest for improving photovoltaic performance durability. Herein, a novel 1D perovskite based on 1,3‐thiazole‐2‐carboximidamide (TZC) cation introduced, which exhibits robust chemical interactions with PbI 2 3D perovskite, enabling the fabrication high‐quality mixed‐dimensional films identified by HR‐TEM GIWAXS analyses. Benefiting from lower formation energy barrier perovskites, they can preferentially form act as crystal seeds regulate crystallization kinetics optimized morphology improved crystallinity. In addition effectively passivating surface defects suppressing nonradiative recombination, TZC‐enabled exhibit pronounced n‐type doping characteristics, leading an elevated Fermi level (from −4.63 −4.44 eV) facilitating charge carrier extraction transport in p‐i‐n devices. As result, this strategy not only significantly enhances power conversion efficiency (PCE) widely studied 1.55 eV bandgap but also boosts PCE 1.68 1.85 wide‐bandgap devices, achieving outstanding PCEs 22.52% 18.65%, respectively. These findings highlight immense potential TZC‐functionalized enhancing high‐performance cell applications.

Язык: Английский

Revealing the Critical Role of Electron‐Withdrawing Cores in Bulk Passivation of Diammonium Ligands Toward High‐Performance Perovskite Solar Cells DOI Open Access
Jiayu Hu, Ying Qiao, Jie Zeng

и другие.

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 20, 2025

Abstract Diammonium derivatives with electron‐withdrawing cores of cyclohexyl or phenyl have demonstrated enormous potential in achieving high‐performance perovskite solar cells. Nevertheless, the critical role these diammonium passivation on device performance is yet to be elucidated. Herein, two kinds ligands 1, 4‐cyclohexyldimethylammonium diiodide (CyDMADI) and 4‐phenyldimethylammonium (PhDMADI) are introduced into precursor for bulk passivation. The PhDMADI system exhibits a stronger unit comparison CyDMADI core, thus resulting enhanced electrostatic interaction between uncoordinated Pb 2+ groups hydrogen bonds I─Pb skeleton. Such strengthened interactions effectively inhibit generation trap states therefore significantly decrease non‐radiative recombination. PhDMADI‐passivated film demonstrates mitigated microstrain decreased grain boundary grooves (GBGs) compared CyDMADI‐based counterpart. Simultaneously, treatment can efficiently slow down hot‐carriers cooling dynamics process, benefiting transfer hot‐carriers. Consequently, achieves an impressive efficiency 26.04%, along excellent operating stability which retains 90% its initial after 1100 h tracking at maximum power point under continuous one sun illumination.

Язык: Английский

Процитировано

0

N‐Type Doping Characteristics Enabled by 1D Perovskite for Advancing Perovskite Photovoltaics: From 1.55 to 1.85 eV Bandgap DOI

Xianfang Zhou,

Fei Wang,

Yonggui Sun

и другие.

Advanced Energy Materials, Год журнала: 2025, Номер unknown

Опубликована: Май 15, 2025

Abstract Developing low‐dimensional perovskites to enhance both single‐junction and tandem solar cells is of great interest for improving photovoltaic performance durability. Herein, a novel 1D perovskite based on 1,3‐thiazole‐2‐carboximidamide (TZC) cation introduced, which exhibits robust chemical interactions with PbI 2 3D perovskite, enabling the fabrication high‐quality mixed‐dimensional films identified by HR‐TEM GIWAXS analyses. Benefiting from lower formation energy barrier perovskites, they can preferentially form act as crystal seeds regulate crystallization kinetics optimized morphology improved crystallinity. In addition effectively passivating surface defects suppressing nonradiative recombination, TZC‐enabled exhibit pronounced n‐type doping characteristics, leading an elevated Fermi level (from −4.63 −4.44 eV) facilitating charge carrier extraction transport in p‐i‐n devices. As result, this strategy not only significantly enhances power conversion efficiency (PCE) widely studied 1.55 eV bandgap but also boosts PCE 1.68 1.85 wide‐bandgap devices, achieving outstanding PCEs 22.52% 18.65%, respectively. These findings highlight immense potential TZC‐functionalized enhancing high‐performance cell applications.

Язык: Английский

Процитировано

0