Dopant-induced interactions in spiro-OMeTAD: Advancing hole transport for perovskite solar cells DOI Creative Commons

Yueyao Dong,

Florine M. Rombach, Ganghong Min

и другие.

Materials Science and Engineering R Reports, Год журнала: 2024, Номер 162, С. 100875 - 100875

Опубликована: Ноя. 27, 2024

Язык: Английский

A Versatile Bridging Molecule Managed the Buried SnO2/Perovskite Interface for Efficient and Stable Perovskite Solar Cells DOI

Haiting Tan,

Xuebin Yu, Weibin Ren

и другие.

Small, Год журнала: 2025, Номер unknown

Опубликована: Апрель 3, 2025

Buried interface in perovskite solar cells (PSCs) is a critical determination for the performance and stability because it dominates crystallization of layer, non-radiative recombination, ion migration at interfaces. Herein, novel versatile modifier, potassium sucrose octasulfate (K8SOS) which rich sulfonic groups ions, introduced bridging buried SnO2 interface, to improve interfacial states further device performance. It found that K8SOS serves as bridge can not only passivate defects through multi-site strengthening chemical binding, thus effectively inhibiting non-radiation recombination suppressing migration, but also optimize surface state absorber, ultimately achieving gratifying efficiency 25.32% with negligible hysteresis. What's more, optimized delivers admirable sustaining over 90% initial power conversion after being aged under continuous 85 °C heating stress 40 ± 5% RH humidity ≈600 ≈1200 h 1-sun illumination, respectively.

Язык: Английский

Процитировано

1

Micro-strain regulation strategy to stabilize perovskite lattice based on the categories and impact of strain on perovskite solar cells DOI
Caixia Li, Wenwu Liu,

Shiji Da

и другие.

Journal of Energy Chemistry, Год журнала: 2024, Номер unknown

Опубликована: Сен. 1, 2024

Язык: Английский

Процитировано

5

Dopant-induced interactions in spiro-OMeTAD: Advancing hole transport for perovskite solar cells DOI Creative Commons

Yueyao Dong,

Florine M. Rombach, Ganghong Min

и другие.

Materials Science and Engineering R Reports, Год журнала: 2024, Номер 162, С. 100875 - 100875

Опубликована: Ноя. 27, 2024

Язык: Английский

Процитировано

5