Quasi-Homojunction Based on 1D-Chained Alloyed Sb2Se3 for High-Performance Broadband Photodetection and Matrix Imaging DOI

Ruisi Gao,

Xinyi Chen, Xinyue Wang

и другие.

Nano Letters, Год журнала: 2025, Номер unknown

Опубликована: Июнь 4, 2025

Junction-based photodiodes play a crucial role in integrated devices due to their compactness and efficient rectification. However, three-dimensional (3D) semiconductor heterojunctions suffer from high interface defects caused by lattice mismatch, while one-dimensional (1D) semiconductors feature large interchain gaps that alleviate matching requirements provide strain relaxation, making them highly promising for homojunction construction. Herein, quasi-homojunction is constructed via situ Bi doping 1D Sb2Se3. Compared uniform film photodetectors, the quasi-homojunction-based photodetector exhibits low dark current (4.8 nA cm-2), light (62.2 μA external quantum efficiency (35.5%@2.73 nW fast response speed. Furthermore, monolithically on thin-film transistor readout circuit short-wavelength infrared imaging applications, demonstrated 64 × pixel array. Moreover, detectors exhibit broadband detection X-ray near-infrared, showing potential application image fusion. This work provides novel strategy photodetectors integration.

Язык: Английский

Cs+‐Induced Se/S Ratio Variation to Regulate Energy Band Structure for Efficient Sb2(S,Se)3 Bulk Heterojunction Solar Cells DOI
Zhiheng Xu, Junwei Chen, Gaoyang Li

и другие.

Small, Год журнала: 2025, Номер unknown

Опубликована: Фев. 9, 2025

As an emerging photovoltaic material, antimony selenosulfide (Sb2(S,Se)3) has attracted considerable attention and research enthusiasm. However, the current solution-processed Sb2(S,Se)3 layers suffer from severe unfavorable energy band structure problems attributed to vertical gradient-variable Se/S atomic ratio, making it a challenging prospective subject. Herein, novel convenient alkali metal Cs+-induced ratio variation strategy been developed for first time regulate through hydrothermal-processed CdS nanorod-arrays (NAs)/Sb2(S,Se)3 bulk heterojunction (BHJ) films. The regulation narrows Se-elemental concentration gradient distribution adjusting effectively in longitudinal CdS-NAs/Sb2(S,Se)3 BHJ This generates favorable structure, contributing rapid charge separation extraction of photogenerated carriers BHJ. Meanwhile, not only passivates defect-state enhances crystal size film, bust also extend carrier lifetime devices. resulting Cs-Sb2(S,Se)3 devices exhibit impressing power conversion efficiency (η) 8.23%, highest one currently available solar cells. study will undoubtedly facilitate development efficient devices, other similar inorganic semiconductor

Язык: Английский

Процитировано

0
Phase evolution in AgSbS2 thin films synthesized via a two-stage process DOI Creative Commons
Y.B. Kishore Kumar,

Athipalli Divya,

Radhalayam Dhanalakshmi

и другие.

Materials Research Bulletin, Год журнала: 2025, Номер unknown, С. 113430 - 113430

Опубликована: Март 1, 2025

Язык: Английский

Процитировано

0
Reaction Kinetics Regulation Suppressed Carrier Recombination Loss for High‐Efficient Solution‐Based Antimony Selenosulfide Photovoltaic Devices DOI

Boyang Fu,

Jun Xiong,

Tianhua Jv

и другие.

Advanced Energy Materials, Год журнала: 2025, Номер unknown

Опубликована: Май 2, 2025

Abstract Carrier recombination loss within the emerging antimony selenosulfide (Sb 2 (S,Se) 3 ) photovoltaic devices is a critical factor limiting performance. Herein, reaction kinetics regulation strategy reported to simultaneously passivate deep‐level intrinsic defect and inhibit oxide impurities in Sb absorber with help of sodium borohydride (SB). The SB, on one hand due alkaline feature, can significantly promote decomposition selenourea Se formation, eliminating S1 defects reducing V S defects, other hand, owing property, restore SbO + ions 3+ , thus inhibiting O formation improving heterogeneous nucleation preferable [hk1] orientation. These collective influences have remarkably suppressed carrier strengthened collection optimal band alignment. Consequently, high‐efficient an efficiency 10.62% (0.0684 cm are gained, which comparable latest‐recorded value 10.7% (0.0389 ). This work provides feasible method for suppressing Sb‐based chalcogenide materials supplies precious instruction preparing high‐performance optoelectronic devices.

Язык: Английский

Процитировано

0
Advance in Antimony Triselenide Solar Cell Power Conversion by Dye Sensitized Solar Cell Integration DOI

Vikramachari Mudumala,

Parnapalli Muni Mounika,

Neeraja Adike

и другие.

Solid State Communications, Год журнала: 2025, Номер 404, С. 116025 - 116025

Опубликована: Июнь 3, 2025

Язык: Английский

Процитировано

0
Quasi-Homojunction Based on 1D-Chained Alloyed Sb2Se3 for High-Performance Broadband Photodetection and Matrix Imaging DOI

Ruisi Gao,

Xinyi Chen, Xinyue Wang

и другие.

Nano Letters, Год журнала: 2025, Номер unknown

Опубликована: Июнь 4, 2025

Junction-based photodiodes play a crucial role in integrated devices due to their compactness and efficient rectification. However, three-dimensional (3D) semiconductor heterojunctions suffer from high interface defects caused by lattice mismatch, while one-dimensional (1D) semiconductors feature large interchain gaps that alleviate matching requirements provide strain relaxation, making them highly promising for homojunction construction. Herein, quasi-homojunction is constructed via situ Bi doping 1D Sb2Se3. Compared uniform film photodetectors, the quasi-homojunction-based photodetector exhibits low dark current (4.8 nA cm-2), light (62.2 μA external quantum efficiency (35.5%@2.73 nW fast response speed. Furthermore, monolithically on thin-film transistor readout circuit short-wavelength infrared imaging applications, demonstrated 64 × pixel array. Moreover, detectors exhibit broadband detection X-ray near-infrared, showing potential application image fusion. This work provides novel strategy photodetectors integration.

Язык: Английский

Процитировано

0