ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Май 5, 2025

Additives have found widespread application in perovskite optoelectronic devices, playing a crucial role enhancing the performance and stability of these devices by optimizing crystallization kinetics perovskite. However, nonuniform distribution additives films caused bottom-up volatilization low-boiling-point during traditional thermal annealing is challenging issue that needs to be solved. In this work, we propose strategy integrates laser processing technology with dithieno[3,2-b:2',3'-d]thiophene (DTT) additive process, which enables it reduce defects interacting octahedral inorganic framework Initially, micro-nanostructure film enhanced fast induced high-energy pulsed irradiation, turn modulates evaporation solution regulate DTT. Concurrently, shock pressure generated further restricts accumulation DTT promotes its uniform within film. As result, through DTT, crystal structure electronic optimization lead reduction defect density. The carrier dynamics enhances device an excellent T80 about 2400 h. This approach will provide technical theoretical basis for controlling growth passivation achieve large-scale commercial applications.

Язык: Английский