Chinese Journal of Chemistry, Год журнала: 2025, Номер unknown

Опубликована: Май 29, 2025

Comprehensive Summary OFET‐type optical memories using light bias as the fourth terminal enable low voltage electrical stresses to suffice in generating substantial memory window and photoassisted multibit storage. The undefined molecular structure trapping mechanism of most storage media limit their practical applications. Herein, we report a series charge materials with rigid planar conjugated benzo[1,2‐ b :4,5‐ ’]dithiophene (BDT) acting site photoresponsive group, while insulated (triisopropylsilyl)acetylene (TIPS) unit is introduced prevent leakage path charge. pentacene‐based OFET solution‐processing TTIPS‐BDT shows fast speed, tunable ambipolar memory, large reliable retention, which obviously improved compare performance BDT DTIPS‐BDT devices. In addition, trapping, characteristics behaviors are also discussed detail. device specific response green illumination. This study suggests that derivatives serving elements possess potential applications future plastic electronics.

Язык: Английский