TIPSBDT Derivatives Based Charge Trapping Elements for Photoresponsive Organic Transistor Memories DOI

Linyi Bian,

Xinyang Zhou,

Zongxiang Zheng

и другие.

Chinese Journal of Chemistry, Год журнала: 2025, Номер unknown

Опубликована: Май 29, 2025

Comprehensive Summary OFET‐type optical memories using light bias as the fourth terminal enable low voltage electrical stresses to suffice in generating substantial memory window and photoassisted multibit storage. The undefined molecular structure trapping mechanism of most storage media limit their practical applications. Herein, we report a series charge materials with rigid planar conjugated benzo[1,2‐ b :4,5‐ ’]dithiophene (BDT) acting site photoresponsive group, while insulated (triisopropylsilyl)acetylene (TIPS) unit is introduced prevent leakage path charge. pentacene‐based OFET solution‐processing TTIPS‐BDT shows fast speed, tunable ambipolar memory, large reliable retention, which obviously improved compare performance BDT DTIPS‐BDT devices. In addition, trapping, characteristics behaviors are also discussed detail. device specific response green illumination. This study suggests that derivatives serving elements possess potential applications future plastic electronics.

Язык: Английский

Theoretical Design of L8-Core-Based Molecules by Stepwise Molecular Engineering of Non-Fullerene Acceptors DOI

WU Qing,

Zixu Huang, Aokui Sun

и другие.

ACS Applied Optical Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 1, 2025

Язык: Английский

Процитировано

0

Exploring the Impact of Heavy Atom Substitutions (Se, Te) on the CB16-Based Non- Fullerene Acceptor for High-Performance Organic Solar Cells: DFT and TD-DFT Study DOI
Walid Taouali, K. Alimi

Journal of Fluorescence, Год журнала: 2025, Номер unknown

Опубликована: Март 27, 2025

Язык: Английский

Процитировано

0

Asymmetric Alkyl Chain Engineering of Non-fullerene Acceptors for Efficient Organic Solar Cells DOI

Cong Zhen Qiao,

Qian Xie, Jie Fang

и другие.

Chinese Journal of Polymer Science, Год журнала: 2025, Номер unknown

Опубликована: Май 8, 2025

Язык: Английский

Процитировано

0

TIPSBDT Derivatives Based Charge Trapping Elements for Photoresponsive Organic Transistor Memories DOI

Linyi Bian,

Xinyang Zhou,

Zongxiang Zheng

и другие.

Chinese Journal of Chemistry, Год журнала: 2025, Номер unknown

Опубликована: Май 29, 2025

Comprehensive Summary OFET‐type optical memories using light bias as the fourth terminal enable low voltage electrical stresses to suffice in generating substantial memory window and photoassisted multibit storage. The undefined molecular structure trapping mechanism of most storage media limit their practical applications. Herein, we report a series charge materials with rigid planar conjugated benzo[1,2‐ b :4,5‐ ’]dithiophene (BDT) acting site photoresponsive group, while insulated (triisopropylsilyl)acetylene (TIPS) unit is introduced prevent leakage path charge. pentacene‐based OFET solution‐processing TTIPS‐BDT shows fast speed, tunable ambipolar memory, large reliable retention, which obviously improved compare performance BDT DTIPS‐BDT devices. In addition, trapping, characteristics behaviors are also discussed detail. device specific response green illumination. This study suggests that derivatives serving elements possess potential applications future plastic electronics.

Язык: Английский

Процитировано

0