Next research., Год журнала: 2024, Номер 1(2), С. 100055 - 100055
Опубликована: Ноя. 1, 2024
Язык: Английский
Materials Science and Engineering B, Год журнала: 2024, Номер 310, С. 117744 - 117744
Опубликована: Окт. 3, 2024
Язык: Английский
Процитировано
8
Renewable Energy, Год журнала: 2025, Номер unknown, С. 122365 - 122365
Опубликована: Янв. 1, 2025
Язык: Английский
Процитировано
1
IET Optoelectronics, Год журнала: 2024, Номер 18(4), С. 96 - 120
Опубликована: Июнь 6, 2024
Abstract Among the emerging photovoltaic technologies, solid‐state dye‐sensitised solar cells (ssDSSCs) have attracted considerable interest due to their cost‐effective production, adjustable characteristics, and potential for lightweight flexible applications. Nevertheless, achieving efficiencies comparable established such as perovskite silicon‐based devices, proven challenging. Herein, device structure, Pt/PEDOT: PSS/N719 dye/PC 61 BM/ITO is investigated theoretically using cell capacitance simulator (SCAPS‐1D). Groundbreaking advancement introduced in ssDSSC design, remarkable theoretical power conversion efficiency of 20.73%, surpassing performance reported traditional dye‐based technologies. The model demonstrates an exceptional Fill factor 86.64%, indicating efficient current collection; along with a modest short‐circuit density ( J sc ) 22.38 mA/cm 2 impressive open‐circuit voltage V oc 1.0691 V, highlighting light absorption charge separation. Mott–Schottky analysis parasitic resistances (series shunt) been thoroughly discussed. Despite fact that only numerical simulation involved, proposed ssDSSCs structure gives insights into fabrication highly can be injected production workflow order advance technology DSSC.
Язык: Английский
Процитировано
5
Electrical Engineering, Год журнала: 2025, Номер unknown
Опубликована: Янв. 4, 2025
Язык: Английский
Процитировано
0
Advanced Theory and Simulations, Год журнала: 2025, Номер unknown
Опубликована: Фев. 4, 2025
Abstract Recently, Cu 3 BiS compound has exhibited great potential as a material for the absorber layer in solar cell applications owing to its favorable bandgap of 1.24 eV, abundance, high absorption coefficient, and capacity cost‐effective production. This study demonstrates detailed simulation various kinds heterostructured devices using SCAPS 1D software. The CdS, In 2 S , Zn(O,S), ZnSe compounds are employed electron transport layers (ETLs) conjunction with determine optimal condition. n‐ZnSe/p‐Cu structure outperforms Zn(O,S) ETLs by providing short circuit current (J SC ) 31.38 mA cm −2 an open voltage ( V OC 0.80 V, 81.49% fill factor (FF), power conversion efficiency (PCE) 20.45%. Adding different back surface field (BSF) layers, such AlSb, BaSi CGS, PEDOT:PSS, on other hand, makes J FF much higher, which eventually improves PCE. Use PEDOT:PSS BSF raises range 0.92 0.96 V. presence each boosts ≈5 . Finally, PCE rise ≈29.25% BSFs, 28.69% BSF.
Язык: Английский
Процитировано
0
Coatings, Год журнала: 2025, Номер 15(3), С. 255 - 255
Опубликована: Фев. 20, 2025
Recently, the numerical simulation of solar cells has attracted tantamount scientific attention in photovoltaic community because it saves on research time and resources before actual fabrication devices laboratories. Despite significant advancements quantum dot-sensitized (QDSSCs), power conversion efficiency (PCE) is still low when compared to other such as perovskite. This gap poses a substantial challenge harnessing full potential QDSSCs for widespread adoption renewable energy applications. Enhancing imperative their commercial viability deployment. In this work, SCAPS-1D was used QDSSCs. The cell with general configuration FTO/TiO2/PbS/HTL/Au investigated. device, PbS dots were inserted absorber layer, TiO2 electron transport layer (ETL), gold back contact, following inorganic materials, i.e., copper (I) iodide (CuI), oxide (Cu2O), cadmium zinc telluride selenide (CZTSe), iron tin sulfide (CFTS), (CZTSSe) tested HTL FTO acted conductive substrate. best material exhibited PCE 22.61%, fill factor (FF) 84.67%, an open circuit voltage (Voc) 0.753 V, current density (Jsc) 35.48 mA cm−2. study contributes field by employing simulations optimize QDSSCs, exploring novel materials these identifying CZTSSe promising low-cost that significantly enhances both performance
Язык: Английский
Процитировано
0
Materials for Renewable and Sustainable Energy, Год журнала: 2025, Номер 14(1)
Опубликована: Март 28, 2025
Abstract Solar energy harvesting and conversion has attracted a lot of scientific interest because solar is believed to be clean sustainable. In this study, we report the synthesis porous TiO 2 by sol-gel method later doped with Thulium rare earth ions (Tm 3+ ) for potential application in organic cells as electron transport layers (ETL). Additionally, density functional theory (DFT) calculation was performed CASTEP computational suite explore further optoelectronic charge transfer mechanisms Tm(III)-doped nanomaterials. Thereafter, experimental material’s band gap values were extracted used numerical simulation designed cell general configuration FTO/TiO /PBDB-T/ITIC/Cu O/Ag, via SCAPS-1D simulator. The results showed steady reduction increased Tm doping. electrical conductivity properties an enhanced feature when nanoparticles. calculated from study shows similar decreasing trend that data, suggesting DFT are sufficient describe data. electronic behaviour analogous metal-metal metal-oxides features, which can attributed Ti – O hybridizations, indicated orbital state alignment. best performing modelled device (1.0 mol%) ETL attained PCE 21.83%, V oc 1.54 V, J sc 31.87 mA cm − FF 44.44% better characteristics effective alignment between absorber, thus, efficiency. proposes act suitable n-type material propel realisation high-performance OSCs commercialization future.
Язык: Английский
Процитировано
0
Journal of Computational Electronics, Год журнала: 2025, Номер 24(3)
Опубликована: Май 12, 2025
Язык: Английский
Процитировано
0
Optical and Quantum Electronics, Год журнала: 2024, Номер 56(12)
Опубликована: Ноя. 20, 2024
Язык: Английский
Процитировано
1
Nanomaterials, Год журнала: 2024, Номер 14(24), С. 2016 - 2016
Опубликована: Дек. 15, 2024
Energy generation and storage are critical challenges for developing economies due to rising populations limited access clean energy resources. Fossil fuels, commonly used production, costly contribute environmental pollution through greenhouse gas emissions. Quantum dot-sensitized solar cells (QDSSCs) offer a promising alternative their stability, low cost, high-power conversion efficiency (PCE) compared other third-generation cells. Kesterite materials, known excellent optoelectronic properties chemical have gained attention potential as hole transport layer (HTL) materials in In this study, the SCAPS-1D numerical simulator was analyze cell with configuration FTO/TiO2/MoS2/HTL/Ag. The electron (ETL) titanium dioxide (TiO2), while Cu2FeSnS4 (CFTS), Cu2ZnSnS4 (CZTSe), Cu2NiSnS4 (CNTS), Cu2ZnSnSe4 (CZTSSe) kesterite were evaluated HTLs. MoS2 quantum dot served absorber, FTO anode silver back metal contact. CFTS material outperformed others, yielding PCE of 25.86%, fill factor (FF) 38.79%, short-circuit current density (JSC) 34.52 mA cm−2, an open-circuit voltage (VOC) 1.93 V. This study contributes advancement high-performance QDSSCs.
Язык: Английский
Процитировано
1