Advanced Neuromorphic Applications Enabled by Synaptic Ion‐Gating Vertical Transistors

Advanced Science, Год журнала: 2024, Номер 11(27)

Опубликована: Май 17, 2024

Bioinspired synaptic devices have shown great potential in artificial intelligence and neuromorphic electronics. Low energy consumption, multi-modal sensing recording, multifunctional integration are critical aspects limiting their applications. Recently, a new device architecture, the ion-gating vertical transistor (IGVT), has been successfully realized timely applied to perform brain-like perception, such as vision, touch, taste, hearing. In this short time, IGVTs already achieved faster data processing speeds more promising memory capabilities than many conventional devices, even while operating at lower voltages consuming less power. This work focuses on cutting-edge progress of IGVT technology, from outstanding fabrication strategies design realization low-voltage multi-sensing for artificial-synapse The fundamental concepts IGVTs, signal processing, transduction, plasticity, multi-stimulus perception discussed comprehensively. contribution draws special attention development optimization flexible sensor technologies presents roadmap future high-end theoretical experimental advancements research that mostly achievable by IGVTs.

Язык: Английский

---

Electrolyte-gated optoelectronic transistors for neuromorphic applications

Journal of Semiconductors, Год журнала: 2025, Номер 46(2), С. 021401 - 021401

Опубликована: Фев. 1, 2025

Abstract The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learning, rendering it incapable of meeting the growing demand for efficient high-speed computing. Neuromorphic with significant advantages such as high parallelism ultra-low power consumption is regarded a promising pathway to overcome limitations conventional computers achieve next-generation artificial intelligence. Among various neuromorphic devices, synapses based on electrolyte-gated transistors stand out due their low energy consumption, multimodal sensing/recording capabilities, multifunctional integration. Moreover, emerging optoelectronic devices which combine strengths photonics electronics have substantial potential field. Therefore, this article reviews recent advancements transistors. First, provides an overview neurons, discussing aspects device structures, operating mechanisms, functionalities. Next, applications different areas visual system, pain tactile perception systems are elaborated. Finally, current challenges summarized, future directions developments proposed.

Язык: Английский

---

Maskless Femtosecond‐Laser‐Processed Ionotronic Double‐Gate Transistor Array for Pattern Adaptation Emulation

Advanced Functional Materials, Год журнала: 2024, Номер 34(34)

Опубликована: Март 1, 2024

Abstract Sensory adaptation is a very important function of the biological nervous system to maintain survival. It helps us better perceive, understand, and adapt environment. Therefore, building artificial sensory systems through neuromorphic devices goal that humans have been continuously pursuing. Unfortunately, current research has either based on individual adaptive or employed complex processes. At present, facile fabrication device arrays still great challenge. Herein, maskless ionotronic double‐gate oxide transistor array with pattern demonstrated using femtosecond laser process. Such process patterning technology free chemical contamination, enabling integration arrays. The as‐fabricated exhibits low subthreshold swing 265 mV dec −1 reasonable switching ratio ≈10 3 under operating voltage 1 V. Interestingly, it can achieve transition from nonadaptive behavior by other gate terminal. Moreover, desensitization after be realized for mimicking self‐protection capability systems. Finally, 2 × emulating experience‐dependent ability in human brain. this may provide good opportunity next‐generation bionic robots.

Язык: Английский

---

Simulation of neural functions based on organic semiconductor/MXene synaptic transistors

Organic Electronics, Год журнала: 2024, Номер 131, С. 107090 - 107090

Опубликована: Июль 6, 2024

Язык: Английский

---