Письма в Журнал экспериментальной и теоретической физики, Год журнала: 2024, Номер 120(9-10), С. 694 - 700
Опубликована: Дек. 1, 2024
Scientific Reports, Год журнала: 2024, Номер 14(1)
Опубликована: Фев. 23, 2024
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability integration into photonic structures allows enhanced brightness through Purcell effect, supporting efficient quantum communication technologies. Our work focuses on InAs/InP QDs created via droplet epitaxy MOVPE operate within telecoms C-band. We observe a short radiative lifetime of 340 ps, arising from factor 5, owing QD low-mode-volume crystal cavity. Through in-situ control sample temperature, we show both temperature tuning QD's wavelength and preserved purity at temperatures up 25K. These findings suggest viability QD-based, cryogen-free C-band sources, applicability in
Язык: Английский
Процитировано
18
Nanophotonics, Год журнала: 2025, Номер 14(11), С. 1729 - 1774
Опубликована: Май 5, 2025
Solid-state quantum emitters operating in the telecom wavelength range are pivotal for development of scalable information processing technologies. In this review, we provide a comprehensive overview state-of-the-art solid-state single photons targeting discrete-variable regime and range. We focus on dots, color centers, erbium ion dopants, detailing their synthesis methods applications. The review addresses strategies integration these into photonic devices alongside associated challenges. also discuss applications technologies, examining current limitations, including performance constraints, decoherence, scalability. Finally, propose future directions advancing photonic-based
Язык: Английский
Процитировано
1
Applied Physics Letters, Год журнала: 2024, Номер 124(4)
Опубликована: Янв. 22, 2024
Single photon sources operating on-demand at telecom wavelengths are required in fiber-based quantum secure communication technologies. In this work, we demonstrate single emission from position-controlled nanowire dots emitting λ>1530 nm. Emission the C-band is achieved by composition engineering of an InAsxP1−x dot-in-a-rod structure. Using above-band pulsed excitation, obtain purities g(2)(0)=0.062. These results represent important step toward scalable manufacture high efficiency, rate emitters C-band.
Язык: Английский
Процитировано
3
Nature Communications, Год журнала: 2024, Номер 15(1)
Опубликована: Ноя. 11, 2024
Quantum networks, relying on the distribution of quantum entanglement between remote locations, have potential to transform computation and secure long-distance communication. However, a fundamental ingredient for fibre-based implementations such namely single spin photon directly emitted at telecom wavelengths, has been unattainable so far. Here, we use negatively charged exciton in an InAs/InP dot implement optically active qubit taking advantage lowest-loss transmission window, C-band. We investigate coherent interactions spin-qubit system under resonant excitation, demonstrating high fidelity initialisation control using picosecond pulses. further these tools measure coherence single, undisturbed electron our system. Finally, demonstrate spin-photon solid-state with F = 80.07 ± 2.9%, more than 10 standard deviations above classical limit.
Язык: Английский
Процитировано
3
JETP Letters, Год журнала: 2025, Номер 121(1), С. 35 - 40
Опубликована: Янв. 1, 2025
Язык: Английский
Процитировано
0
Advanced Quantum Technologies, Год журнала: 2023, Номер 6(12)
Опубликована: Окт. 17, 2023
Abstract Generating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes is high interest recent years, research mainly focusing on indium‐based QDs. However, there not much data optical spin properties gallium antimonide (GaSb) QDs, despite it being a physically rich system an indirect to direct bandgap crossover telecom range. This work investigates (quantum‐) GaSb which are fabricated by filling droplet‐etched nanoholes aluminum (AlGaSb) matrix. Photoluminescence (PL) features isolated highly symmetric QDs observed that exhibit narrow linewidth S‐band show excitonic fine structure splitting up µeV. Moreover, time‐resolved measurements decay characteristics exciton performed second‐order photon autocorrelation function charge complex measured , revealing clear antibunching thus proving capability this material platform generate non‐classical light.
Язык: Английский
Процитировано
6
ACS Applied Nano Materials, Год журнала: 2024, Номер 7(23), С. 26854 - 26862
Опубликована: Ноя. 20, 2024
InAs semiconductor quantum dots (QDs) emitting in the near-infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, realization of quantum-photonic nanodevices telecom windows with similar performance remains an open challenge. In particular, nanophotonic devices incorporating light diodes C-band based on GaAs substrates still lacking due to relaxation lattice constant along InGaAs graded layer which makes implementation electrically contacted challenging. Here, we report optimized heterostructure design QDs O- C-bands grown by means molecular beam epitaxy. The embedded mostly relaxed matrices fixed indium content top compositionally buffers. Reciprocal space maps profiles optical absorption spectra used optimize In0.22Ga0.78As In0.30Ga0.70As matrices, accounting chosen grading profile. This approach results a tunable QD photoluminescence (PL) emission from 1200 up 1600 nm. Power polarization dependent micro-PL measurements performed at 4 K reveal exciton-biexciton complexes C-bands. presented study establishes flexible platform that can be essential component advanced photonic InAs/GaAs serve as building blocks future networks.
Язык: Английский
Процитировано
2
JETP Letters, Год журнала: 2024, Номер 120(9), С. 668 - 674
Опубликована: Ноя. 1, 2024
Heterostructures with InAs/InGaAs quantum dots grown by molecular beam epitaxy on the surface of InGaAs metamorphic buffer layers a linearly graded composition profile GaAs(001) substrates have been studied X-ray diffraction, transmission electron microscopy, and, upon growth an additional quantum-dot layer structure, atomic force microscopy. The tendency to formation objects elongated along [1–10] direction (so-called dashes), caused asymmetry in migration In different crystallographic directions, is confirmed. It established that density both and dashes as high (2‒4) × 10 cm –2 . At same time, narrow lines associated emission from individual are observed spectra low-temperature ( T = K) microphotoluminescence wide wavelength range (1.30–1.55 µm). size shape estimated atomic-force microscopy data good agreement previously reported parameters demonstrated.
Язык: Английский
Процитировано
2
ACS Photonics, Год журнала: 2024, Номер unknown
Опубликована: Дек. 20, 2024
We present Purcell-enhanced (FP > 25) semiconductor InAs quantum dot decay times of T1 < 30 ps, enabled by deterministic hybrid circular Bragg gratings (hCBGs). investigate the benefits these short T1-times on two-photon indistinguishability for quasi-resonant and strictly resonant excitation observe visibilities ≥96% at 12.5 ns time delay consecutively emitted photons. The strongly enable a high degree elevated temperatures up to K and, moreover, allow 1.28 GHz repetition rate. Our work highlights prospects highly solid-state emitters applications in information technologies operating clock rates.
Язык: Английский
Процитировано
1
Advanced Quantum Technologies, Год журнала: 2024, Номер unknown
Опубликована: Сен. 26, 2024
Abstract Spatial distribution‐controlled single‐photon emitters operating is demonstrated in telecom wavelength range at room‐temperature with GaN thin film grown on a patterned sapphire substrate (PSSs) varying pattern sizes and dimensions. The analysis focuses the various optical properties of defects within film, particularly their interactions PSS. confocal fluorescence mapping room temperature revealed localized inside layers located between patterns. In addition, compared to conventional substrates, PSS can scatter photons outside total reflection cone, thereby enhancing light extraction efficiency. From samples, single photon emission observed ranging from 1.1 1.35 µm temperature, which critical for advancing quantum communication technologies, elucidate how physical characteristics influence performance efficiency GaN‐based emitters.
Язык: Английский
Процитировано
0