ACS Applied Electronic Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Фев. 14, 2025
Tin
(Sn)-based
perovskite
light-emitting
diodes
(PeLEDs)
have
garnered
significant
attention
owing
to
their
superior
optoelectronic
properties,
affordable
solution
processing,
and
environmental
friendliness.
However,
the
properties
of
Sn-PeLEDs
trail
those
lead
(Pb)
counterparts.
The
main
obstacle
is
easy
oxidation
Sn2+
Sn4+
as
well
fast
crystallization,
leading
poor
film
quality
with
many
defects.
Herein,
a
convenient
effective
interface
engineering
strategy
reported
fabricate
(2-thiopheneethylamine)2SnI4
(TEA2SnI4)
PeLEDs
by
introducing
different
peptides
into
PEDOT:PSS
hole-transport
layer
(HTL).
Benefiting
from
interaction
between
peptide
molecules
Sn-perovskite
nuclei,
crystallization
dynamics
are
effectively
adjusted,
an
improved
morphology.
At
same
time,
multiple
functional
groups
can
suppress
passivate
Therefore,
films
luminescence
efficiency
obtained.
further
used
for
fabrication
pure
red
enhanced
performance.
In
particular,
optimized
devices
based
on
Leu-Gly-Gly
(LGG)
achieve
peak
external
quantum
0.5%
brightness
136
cd
m–2,
which
about
2
3
times
larger,
respectively,
than
reference
device.
This
research
offers
general
improve
performance
via
engineering.
ACS Energy Letters,
Год журнала:
2024,
Номер
9(6), С. 2500 - 2507
Опубликована: Май 10, 2024
Light-emitting
diodes
(LEDs)
with
different
emission
spectra
are
widely
used
in
daily
life
for
a
variety
of
applications.
However,
due
to
fundamental
restrictions
light-emitting
materials,
the
development
near-infrared
LEDs
(NIR-LEDs)
is
still
modest.
Recently,
solution-processed
tin-halide
perovskites
(THPs)
have
emerged
as
one
most
promising
materials
NIR-LED
In
this
Perspective,
we
start
discussing
peculiarities
THP
semiconductors
and
how
their
electronic
properties
affect
light
efficiency.
We
then
summarize
current
efforts
material
engineering
design
master
films.
Finally
give
an
outlook
on
future
challenges
technical
roadmap
tin-based
perovskite
LEDs.
Tin
(Sn)-based
perovskites
are
being
investigated
in
many
optoelectronic
applications
given
their
similar
valence
electron
configuration
to
that
of
lead-based
and
the
potential
environmental
hazards
perovskites.
However,
formation
high-quality
Sn-based
perovskite
films
faces
several
challenges,
mainly
due
easy
oxidation
Sn
Advanced Materials Technologies,
Год журнала:
2022,
Номер
8(20)
Опубликована: Дек. 4, 2022
Abstract
Augmented
reality
(AR)
and
virtual
(VR)
are
emerging
interactive
technologies
that
realize
the
“metaverse,”
leading
to
a
totally
new
digital
experience
in
daily
life
various
aspects.
In
order
provide
users
with
more
immersive
experience,
displays
for
AR/VR
have
rapidly
evolved
achieve
high
resolutions
large
color
gamut
on
small
panels.
Recently,
nanoscale
light
emitters
such
as
quantum
dots
(QDs)
metal
halide
perovskites
(MHPs)
photoluminescence
efficiency
purity
levels
garnered
much
attention
conversion
materials
displays.
However,
low
material
stability
absence
of
high‐resolution
patterning
process
does
not
impair
optical
properties
act
obstacles
preventing
realization
Herein,
state‐of‐the‐art
constituting
current
devices
reviewed
from
an
industrial
point
view
recent
progress
QD
MHP
emitter
discussed,
including
their
basic
structural
properties,
synthesis
strategies
enhance
stability,
advanced
technologies,
down‐conversion
light‐emitting
diode
applications.
Based
review,
authors’
perspective
future
research
directions
next‐generation
is
presented.
Understanding
and
controlling
the
nucleation
crystallization
in
solution-processed
perovskite
thin
films
are
critical
to
achieving
high
in-plane
charge
carrier
transport
field-effect
transistors
(FETs).
This
work
demonstrates
a
simple
effective
additive
engineering
strategy
using
pentanoic
acid
(PA).
Here,
PA
is
introduced
both
modulate
process
improve
2D
2-thiopheneethylammonium
tin
iodide
((TEA)2
SnI4
)
FETs.
It
revealed
that
carboxylic
group
of
strongly
coordinated
spacer
cation
TEAI
[SnI6
]4-
framework
precursor
solution,
inducing
heterogeneous
lowering
undesired
oxidation
Sn2+
during
film
formation.
These
factors
contribute
reduced
defect
density
improved
morphology,
including
lower
surface
roughness
larger
grain
size,
resulting
overall
enhanced
transistor
performance.
The
decreased
ion
migration
lead
higher
p-channel
mobility
0.7
cm2
V-1
s-1
,
which
more
than
threefold
increase
compared
with
control
device.
Temperature-dependent
studies
demonstrate
2.3
at
100
K
due
diminished
low
temperatures.
result
illustrates
bears
great
potential
realize
high-performance
Sn-based
The Innovation Materials,
Год журнала:
2023,
Номер
1(1), С. 100015 - 100015
Опубликована: Янв. 1, 2023
<p>Lead
halide
perovskites
(LHPs),
which
have
demonstrated
exceptional
optical
and
electrical
properties
are
promising
candidates
for
electroluminescent
light-emitting
diodes
(LEDs).
However,
concerns
about
the
toxicity
stability
hindered
their
commercialization.
In
recent
years,
lead-free
metal
(LFMHPs)
emerged
as
alternatives,
significant
progress
has
already
been
made
in
developing
LFMHP-based
LEDs.
Nevertheless,
device
performance
is
still
inferior
to
that
of
well-developed
LHP-based
counterparts.
To
fully
exploit
LED
applications
boost
performance,
this
review,
we
provide
a
comprehensive
overview
currently
explored
different
metal-based
LFMHPs.
We
mainly
focus
on
preparation
methods,
crystal
structure,
properties,
these
materials.
Furthermore,
conclude
with
discussion
regarding
key
challenges
potential
prospects
field.
hope
review
will
inspire
more
extensive
research
LFMHPs
from
new
perspective
promote
practical
LEDs
multiple
directions
current
future
research.</p>
Journal of Materials Chemistry C,
Год журнала:
2023,
Номер
11(29), С. 9916 - 9924
Опубликована: Янв. 1, 2023
Inhibition
of
the
Sn
2+
oxidation
process
and
reduction
perovskite
crystallization
rate
are
achieved
simultaneously
by
using
bifunctional
small
molecular
additives,
yielding
a
red-emission
device
with
CIE
coordinates
matching
BT.2020
standard.
Journal of Materials Chemistry A,
Год журнала:
2023,
Номер
11(19), С. 10319 - 10327
Опубликована: Янв. 1, 2023
An
effective
method
slows
down
crystallization
kinetics
via
regulating
the
competition
between
intra-
and
intermolecular
interactions
in
Ruddlesden–Popper
tin-based
perovskites.
Cell Reports Physical Science,
Год журнала:
2024,
Номер
5(6), С. 102020 - 102020
Опубликована: Июнь 1, 2024
Two-dimensional
(2D)
tin
halide
perovskites
have
attracted
significant
interest
due
to
their
exceptional
optoelectronic
properties,
high
carrier
mobility,
and
low
toxicity.
However,
a
fundamental
understanding
of
the
correlation
between
structure
photo-excited
carriers'
behavior
remains
ambiguous.
Herein,
we
synthesize
(PEA)2MAn−1SnnI3n+1
(n
=
1–4)
single
crystals
with
tunable
quantum-well
thickness
value).
The
distortion
properties
are
influenced
by
n
value.
Our
density
functional
theory
calculations
reveal
that
energy
band
gap
lifetime
closely
related
value
quantum
confinement
dielectric
screening.
Remarkably,
unlike
lead
perovskites,
2D
consistently
exhibit
excitons
as
dominant
carriers,
irrespective
values.
These
findings
offer
critical
insights
into
designing
fabricating
high-performance
devices
based
on
particularly
in
terms
tuning
through
