Recent Advances in Carbon‐Based Electrodes for Energy Storage and Conversion

Advanced Science, Год журнала: 2023, Номер 10(18)

Опубликована: Апрель 25, 2023

Carbon-based nanomaterials, including graphene, fullerenes, and carbon nanotubes, are attracting significant attention as promising materials for next-generation energy storage conversion applications. They possess unique physicochemical properties, such structural stability flexibility, high porosity, tunable features, which render them well suited in these hot research fields. Technological advances at atomic electronic levels crucial developing more efficient durable devices. This comprehensive review provides a state-of-the-art overview of advanced carbon-based nanomaterials various applications, focusing on supercapacitors, lithium sodium-ion batteries, hydrogen evolution reactions. Particular emphasis is placed the strategies employed to enhance performance through nonmetallic elemental doping N, B, S, P either individual or codoping, modifications creation defect sites, edge functionalization, inter-layer distance manipulation, aiming provide general guidelines designing devices by above approaches achieve optimal performance. Furthermore, this delves into challenges future prospects advancement electrodes conversion.

Язык: Английский

---

Emerging Trends of Carbon‐Based Quantum Dots: Nanoarchitectonics and Applications

Small, Год журнала: 2023, Номер 19(17)

Опубликована: Янв. 24, 2023

Carbon-based quantum dots (QDs) have emerged as a fascinating class of advanced materials with unique combination optoelectronic, biocompatible, and catalytic characteristics, apt for plethora applications ranging from electronic to photoelectrochemical devices. Recent research works established carbon-based QDs those frontline through improvements in design, processing, device stability. This review broadly presents the recent progress synthesis QDs, including carbon graphene graphitic nitride their heterostructures, well salient applications. The methods are first introduced, followed by an extensive discussion dependence performance on intrinsic properties nanostructures aiming present general strategies designing optimal performance. Furthermore, diverse presented, emphasis relationship between band alignment, charge transfer, improvement. Among discussed this review, much focus is given photo electrocatalytic, energy storage conversion, bioapplications, which pose grand challenge rational designs. Finally, summary existing challenges future directions elaborated.

Язык: Английский

---

Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications

Nano-Micro Letters, Год журнала: 2022, Номер 15(1)

Опубликована: Дек. 29, 2022

Metal halide perovskites have generated significant attention in recent years because of their extraordinary physical properties and photovoltaic performance. Among these, inorganic perovskite quantum dots (QDs) stand out for prominent merits, such as confinement effects, high photoluminescence yield, defect-tolerant structures. Additionally, ligand engineering an all-inorganic composition lead to a robust platform ambient-stable QD devices. This review presents the state-of-the-art research progress on QDs, emphasizing electronic applications. In detail, QDs will be introduced first, followed by discussion synthesis methods growth control. Afterwards, emerging applications electronics, including transistors memories, presented. Finally, this provide outlook potential strategies advancing technologies.

Язык: Английский

---

Functional Materials for Memristor‐Based Reservoir Computing: Dynamics and Applications

Advanced Functional Materials, Год журнала: 2023, Номер 33(42)

Опубликована: Июнь 23, 2023

Abstract The booming development of artificial intelligence (AI) requires faster physical processing units as well more efficient algorithms. Recently, reservoir computing (RC) has emerged an alternative brain‐inspired framework for fast learning with low training cost, since only the weights associated output layers should be trained. Physical RC becomes one leading paradigms computation using high‐dimensional, nonlinear, dynamic substrates. Among them, memristor appears to a simple, adaptable, and constructing they exhibit nonlinear features memory behavior, while memristor‐implemented neural networks display increasing popularity towards neuromorphic computing. In this review, systems from following aspects: architectures, materials, applications are summarized. It starts introduction structures that can simulated blocks. Specific interest then focuses on behaviors memristors based various material systems, optimizing understanding relationship between relaxation which provides guidance references building coped on‐demand application scenarios. Furthermore, recent advances in memristor‐based surveyed. end, further prospects system view envisaged.

Язык: Английский

---

Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse

Small Structures, Год журнала: 2024, Номер 5(6)

Опубликована: Апрель 3, 2024

Memristive devices such as resistive switching memories and artificial synapses have emerged promising technologies to overcome the technological challenges associated with von Neumann bottleneck. Recently, lead halide perovskites drawn substantial research attention candidate material for memristors due their unique optoelectronic properties, solution processability, mechanical flexibility. However, toxicity of lead‐containing species has raised major concerns health environment, which makes it crucial transition from lead‐based lead‐free materials practical applications. Herein, recent progress metal halides including perovskite analogs memory synapse is reviewed. Initially, fundamentals mechanisms are introduced. Next, design, fabrication technique, device performance summarized critically evaluated each species. Finally, toward outlined discussed, some potential directions future study proposed.

Язык: Английский

---

Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing

Advanced Electronic Materials, Год журнала: 2025, Номер unknown

Опубликована: Фев. 25, 2025

Abstract Non‐volatile memories are expected to revolutionize a wide range of information technologies, but their manufacturing cost is one the top concerns researchers must address. This study presents 1D lead‐free halide perovskite K 2 CuBr 3 , as novel material candidate for resistive switching (RS) devices, which features only earth‐abundant elements, K, Cu, and Br. To knowledge, this first low‐dimensional with exceptionally low production costs minimal environmental impact. Owing unique carrier transport along Cu─Br networks, RS device exhibits excellent bipolar behavior, an On/Off window 10 5 retention time over 1000 s. The devices can also act artificial synapses transmit various forms synaptic plasticities, integration into perceptron neural network deliver high algorithm accuracy 93% image recognition. Overall, underscores promising attributes future development memory storage neuromorphic computing, leveraging its distinct properties economic benefits.

Язык: Английский

---

Recent progress with one-dimensional metal halide perovskites: from rational synthesis to optoelectronic applications

NPG Asia Materials, Год журнала: 2023, Номер 15(1)

Опубликована: Фев. 24, 2023

Abstract Metal halide perovskites can be readily synthesized, they exhibit tunable physical properties and excellent performance, are heavily studied optoelectronic materials. Compared to the typical three-dimensional perovskites, morphological-level one-dimensional (1D) nanostructures enable charge transport photon propagation with low exciton binding energies long charge-carrier diffusion lengths, while molecular-level 1D good compositional structural flexibilities, highly bandgaps, strong quantum confinement effects, ambient stabilities. The natures of these emerging enhance performance devices. Herein, we highlight recent progress realized in syntheses characterizations both morphological- structures, compositions, properties, as well their photovoltaic, light-emission, photodetection applications. In addition, current challenges, future prospects, promising research directions discussed provide guidance advancing field perovskites.

Язык: Английский

---

Stimuli‐responsive photoluminescent copper(I) halides for scintillation, anticounterfeiting, and light‐emitting diode applications

Aggregate, Год журнала: 2024, Номер 5(5)

Опубликована: Май 28, 2024

Abstract Highly sensitive stimuli‐responsive luminescent materials are crucial for applications in optical sensing, security, and anticounterfeiting. Here, we report two zero‐dimensional (0D) copper(I) halides, (TEP) 2 Cu Br 4 , 6 1D 3 Ag 9 which comprised of isolated [Cu ] 2− [Ag 3− polyanions, respectively, separated by TEP + (tetraethylphosphonium [TEP]) cations. demonstrate greenish‐white orange‐red emissions, with near unity photoluminescence quantum yields, while is a poor light emitter. Optical spectroscopy measurements density‐functional theory calculations reveal that photoemissions these compounds originate from self‐trapped excitons due to the excited‐state distortions halide units. Crystals Cu(I) halides radioluminescence active at room temperature under both X‐ γ‐rays exposure. The yields up 15,800 ph/MeV 662 keV 137 Cs suggesting their potential scintillation applications. Remarkably, interconvertible through chemical stimuli or reverse crystallization. In addition, luminescence on‐off switching upon thermal stimuli. sensitivity coupled ultrabright emission allows consideration such as solid‐state lighting, information storage,

Язык: Английский

---

Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(9), С. 12073 - 12084

Опубликована: Фев. 21, 2024

Memristors can be used to mimic synaptic behavior in artificial neural networks, which makes them a key component neuromorphic computing and holds promise for advancing the field. In this study, memory device based on ZnO-BaTiO

Язык: Английский

---

2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications

Advanced Science, Год журнала: 2024, Номер 11(23)

Опубликована: Апрель 22, 2024

Abstract Metal halide perovskites (MHPs) are considered as promising candidates in the application of nonvolatile high‐density, low‐cost resistive switching (RS) memories and artificial synapses, resulting from their excellent electronic optoelectronic properties including large light absorption coefficient, fast ion migration, long carrier diffusion length, low trap density, high defect tolerance. Among MHPs, 2D have exotic layered structure great environment stability compared with 3D counterparts. Herein, recent advances MHPs for RS synapses realms comprehensively summarized discussed, well related physical mechanisms presented. Furthermore, current issues developing roadmap next‐generation synapse elucidated.

Язык: Английский

---