Improving the thermoelectric performance of p-type (BixSb1−x)2Te3 thin films via tuning the BixSb1−x layer DOI

Hang Ju,

Beibei Zhu, Wenya Wang

и другие.

Journal of Materials Chemistry A, Год журнала: 2024, Номер 12(33), С. 22276 - 22285

Опубликована: Янв. 1, 2024

Through annealing the precursor layer Bi x Sb 1− combined with thickness variation, Seebeck coefficient and electrical conductivity are increased simultaneously in (Bi ) 2 Te 3 . A resultant high PF of 37.78 μW cm −1 K −2 is obtained.

Язык: Английский

High thermoelectric performance of polycrystalline SnSe prepared by cold sintering DOI

Lijie Shi,

Jun Ding,

Xiangbin Chen

и другие.

Ceramics International, Год журнала: 2025, Номер unknown

Опубликована: Фев. 1, 2025

Язык: Английский

Процитировано

1
Perspective on Crystal Structures, Synthetic Methods, and New Directions in Thermoelectric Materials DOI Creative Commons
Marta María González-Barrios, Marina Tabuyo‐Martínez, David Ávila‐Brande

и другие.

Small Structures, Год журнала: 2024, Номер unknown

Опубликована: Июнь 10, 2024

This review explores the state‐of‐the‐art of thermoelectric materials, covering different crystalline structures and material families (e.g., chalcogenides, Zintl phases, skutterudites, clathrates, oxides, half‐Heusler, organic–inorganic composites, metal–organic frameworks, silicides). It examines their corresponding properties while considering synthesis methods employed, paying significant attention to those that particularly follow sustainable routes. Additionally, work addresses current challenges in field, such as enhancing stability at high temperatures reducing manufacturing costs. The understanding gained this field opens avenues for designing more efficient devices convert waste heat into electrical energy, thereby advancing cleaner technologies.

Язык: Английский

Процитировано

4
Achieving a High zTavg in n-Type Sb-Doped Mg2Si0.3Sn0.7 via High-Pressure-Modulated Microstructures DOI

Xiangyang Dong,

Rongwei Zhai, Bowen Zheng

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Март 26, 2025

Mg2Si-based compounds are cost-effective and environmentally friendly thermoelectric materials. However, the current Mg2(Si,Sn) solid solutions still suffer from low figure of merit zT (or energy conversion efficiency), especially averaged value (zTavg < 1.0). In this study, we synthesize Mg2(Si0.3Sn0.7)1–xSbx (x = 0, 0.5, 0.75, 1, 1.5%) through combination high-pressure, high-temperature (HPHT) synthesis spark plasma sintering (SPS). The high-pressure instrument effectively inhibits unfavorable oxidation Mg. This HPHT + SPS methodology improves defect formation efficiency Sb-doped Mg2Si0.3Sn0.7, leading to an increased carrier concentration enhanced electrical conductivity. Moreover, as a benefit pressure-induced conduction band convergence Sb-flattened band, density states' effective mass (md*) significantly increases ∼3.3me, maintaining high Seebeck coefficients even at concentration. synergetic effects doping md* increase peak power factor exceed 50 μW cm–1 K–2. Notably, due HPHT-modified microstructures, hierarchy phonon scatterings established suppress lattice thermal conductivity 1.29 W m–1 K–1 568 K; Sb point defects, dislocations, grain boundaries/pores can scatter short-, medium-, long-wavelength phonons, respectively. Ultimately, optimized Mg2(Si0.3Sn0.7)0.99Sb0.01 sample in whole temperature region; is 1.37 673 K, plateau ∼1.35 realized between 723 K. Thus, notable average over range 323–723 K 1.08. Our work demonstrates that high-pressure-induced concentration, doping, microstructure modifications facilitate property improvement Mg2(Si,Sn)-based compounds.

Язык: Английский

Процитировано

0
Synergistically optimize thermoelectric and mechanical properties of cubic SnSe-based alloys via nanocomposite engineering utilizing SiC nanoparticles as the dispersed phase DOI
Wenying Wang, Junliang Zhu,

Lin Bo

и другие.

Rare Metals, Год журнала: 2025, Номер unknown

Опубликована: Апрель 4, 2025

Язык: Английский

Процитировано

0
A Review of Polycrystalline SnSe Thermoelectric Materials: Progress and Prospects DOI

Yaru Gong,

Wei Dou, Yanan Li

и другие.

Acta Metallurgica Sinica (English Letters), Год журнала: 2025, Номер unknown

Опубликована: Апрель 14, 2025

Язык: Английский

Процитировано

0
Exploring the frontiers of SnSeS: A comprehensive review of properties and applications DOI

Yating Wang,

Lin Lin, Jian Zhang

и другие.

Materials Science in Semiconductor Processing, Год журнала: 2024, Номер 185, С. 108862 - 108862

Опубликована: Авг. 31, 2024

Язык: Английский

Процитировано

1
Variations in the optical and thermoelectric behavior of ZnCo2O4 nanostructures as a function of synthesis temperature DOI
Muhammad Usman Asad,

Naeem Ur-Rehman,

N. Bano

и другие.

Journal of Ovonic Research, Год журнала: 2024, Номер 20(5), С. 745 - 762

Опубликована: Ноя. 1, 2024

Zinc cobalt oxide nanostructures were synthesized by electrochemical deposition of zinccobalt alloy at various bath temperatures (15, 30, 45 and 60 ˚C) its hydrothermal oxidation 100 ˚C. X-ray diffraction pattern Raman spectroscopy data reveals the formation spinal structure ZnCo2O4. Photoluminescence spectra samples exhibit broad peaks with a red shift in emission energy. Diffused reflectance measured band gap materials; is 3.06, 3.03, 3.02 2.99 eV, for electrodeposited 15, ˚C, respectively. Optical conductivity materials decreases increasing layers while shows opposite trend. Thermoelectric set up measures change potential difference through when different are applied an increment observed. Seebeck co-efficient power factor also studied as function temperature.

Язык: Английский

Процитировано

0
Improving the thermoelectric performance of p-type (BixSb1−x)2Te3 thin films via tuning the BixSb1−x layer DOI

Hang Ju,

Beibei Zhu, Wenya Wang

и другие.

Journal of Materials Chemistry A, Год журнала: 2024, Номер 12(33), С. 22276 - 22285

Опубликована: Янв. 1, 2024

Through annealing the precursor layer Bi x Sb 1− combined with thickness variation, Seebeck coefficient and electrical conductivity are increased simultaneously in (Bi ) 2 Te 3 . A resultant high PF of 37.78 μW cm −1 K −2 is obtained.

Язык: Английский

Процитировано

0