Great Carbon Nano Materials based Composites for Electronic Skin: Intelligent Sensing, and Self-Powered Nano Generators

Nano Energy, Год журнала: 2025, Номер unknown, С. 110805 - 110805

Опубликована: Фев. 1, 2025

Язык: Английский

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Strain-induced flatbands in large-angle twisted bilayer graphene

Journal of Applied Physics, Год журнала: 2025, Номер 137(8)

Опубликована: Фев. 25, 2025

Twisted bilayer graphene (TBG) has attracted widespread attention due to its unique and tunable properties. In this study, we systematically investigate the effects of in-plane biaxial tensile strain on electronic properties TBG with a twist angle greater than magic by tight-binding approach. Our results reveal that energy bands near Fermi level gradually narrow as increases, resulting in continuous decrease velocity formation flatbands. Especially, larger requires critical achieve The strain-induced flatbands exhibit bandwidth vanishing velocity, similar band structures observed at angle. Furthermore, these can be understood enhancement charge localization competition between kinetic interlayer hybridization during process. findings present potential avenue produce large-angle TBG, paving way for further exploration application advanced materials science.

Язык: Английский

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Quantum transport straintronics and mechanical Aharonov-Bohm effect in quasimetallic single-wall carbon nanotubes

Physical Review Applied, Год журнала: 2025, Номер 23(1)

Опубликована: Янв. 15, 2025

Single-wall carbon nanotubes (SWCNTs) are effectively narrow ribbons of two-dimensional (2D) materials with atomically precise edges. They ideal systems to harness quantum transport straintronics (QTS), i.e., using mechanical strain control transport. Their large sub-band energy spacing (approximately 0.8 eV) leads transistors a single channel. We adapt an applied model study QTS in uniaxially strained quasimetallic-SWCNT transistors. The realistic device parameters based on existing experimental platform, channel lengths L=50 nm, diameters d≈1.5 and strains up εtotal≈7%. demonstrate that the charge carrier's propagation angle (the helix respect tube's axis) Θ is fully tunable εtotal. When reaches 90∘, conductance G completely suppressed. A strain-generated band gap can be tuned approximately equal 400 meV. Mechanical adds both scalar ϕε vector gauge potentials transistor's Hamiltonian. These create rich spectrum interferences G, which described as Aharonov-Bohm effect. carriers' phase controlled by purely means. For instance, full 2π shift induced (12,9) tube 0.7 % change. This work opens opportunities add quantitative effects toolbox technologies 2D their nanotubes. locked icon Physics Subject Headings (PhySH)Aharonov-Bohm effectBallistic transportElectrical conductivityQuantum interference effectsQuantum transportStraintronicsNanotubesTransistors

Язык: Английский

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Preparation and Modeling of Graphene Bubbles to Obtain Strain-Induced Pseudomagnetic Fields

Materials, Год журнала: 2024, Номер 17(12), С. 2889 - 2889

Опубликована: Июнь 13, 2024

It has been both theoretically predicted and experimentally demonstrated that strain can effectively modulate the electronic states of graphene sheets through creation a pseudomagnetic field (PMF). Pressurizing into bubble-like structures considered viable approach for engineering PMFs. However, bubbling technique currently faces limitations such as long manufacturing time, low durability, challenges in precise control over size shape pressurized bubble. Here, we propose rapid method based on an oxygen plasma chemical reaction to achieve induction out-of-plane deflections in-plane strains sheets. We introduce numerical scheme capable accurately resolving resulting PMFs within bubbles, even cases where bubble deviates from perfect spherical symmetry. The results provide not only insights but also platform may facilitate exploration strain-mediated behaviors variety other 2D materials.

Язык: Английский

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Generalized framework for straintronics in two-dimensional quantum materials using group theory

Physical review. B./Physical review. B, Год журнала: 2025, Номер 111(8)

Опубликована: Фев. 5, 2025

Язык: Английский

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Magnetic Moment and Spin-State Transitions in Twisted Graphene Nanostructures

The Journal of Physical Chemistry Letters, Год журнала: 2025, Номер unknown, С. 1994 - 2000

Опубликована: Фев. 18, 2025

The emergence of magnetic moments and spin-state transitions in the AA-stacking regions twisted graphene nanoflakes is analyzed by using Density Functional Theory (DFT). Systems different sizes (C192H48, C300H60, C432H72) are employed to model some possible stacking angles. Potential Energy Curves (PECs) computed for interlayer distances twist angles, revealing that triplet ground state appears only repulsive region PEC, with transition distance depending on flake size. results indicate repulsion angle play significant roles determining properties, while spin density analysis confirms edge effects AB-region confinement fundamental bilayers.

Язык: Английский

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Memorization of Strain-Induced Moiré Patterns in Vertical van der Waals Materials

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Март 4, 2025

Twisting layers in van der Waals (vdW) materials have traditionally produced moiré patterns but often suffer from alignment issues and nonuniformity due to the sensitivity of twist angles. Applying strain alone can also generate these patterns, eliminating need for interlayer rotation enabling controlled, reproducible formation. We present mechanistic principles governing evolution strain-induced vertically stacked graphene through atomistic simulations. By analyzing local distribution, we identify a three-stage slippage process responsible pattern Our analyses reveal that triangular domains are stable retained upon unloading, ensuring consistent formation even after removal. Additionally, demonstrate this history be utilized reapply load step-by-step achieve uniform without requiring higher magnitudes. This approach provides robust mechanism designing wafer-scale quantum with superlattices.

Язык: Английский

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Strain Engineering towards Enriched Surface Patterns in Graphene Twistronics

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Март 5, 2025

The remarkable electronic properties of twisted bilayer graphene (TBG) are pivotal to the realm twistronics and significantly regulated by surface wrinkling. In this context, strain engineering provides a novel paradigm for exploring twist-strain-electron coupling. However, prevailing studies have heavily overlooked effects twist angle out-of-plane on wrinkling TBG. To bridge gap, we present pioneering strategy that encapsulates both in-plane strains customize patterns TBG, with via interlayer sp3 bonding. Starting from method, first time identify multiphase transitioning herringbone hexagonal structures through extensive molecular dynamics simulations develop an original phase diagram intuitively illustrate pattern transitions under varying angles bonding densities. delve deeply into mechanisms driving these transitions, establish comprehensive scaling laws linking energies strain, angle, density, thereby defining critical conditions transitions. Moreover, our results highlight atomic reconstruction at small leads markedly different transition behaviors geometric features. By synergistically manipulating work is expected illuminate field provide valuable insights designing novel, tailored devices based wrinkle-related TBG systems.

Язык: Английский

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AFM: An important enabling technology for 2D materials and devices

Nanotechnology Reviews, Год журнала: 2025, Номер 14(1)

Опубликована: Янв. 1, 2025

Abstract The last 20 years have seen remarkable progress in the study of 2D materials leading to discovery interesting properties and application potentials. However, there is still much understand regarding these materials’ physics, mechanics, chemistry utilize their full potential make them useful society. As a result, many efforts been dedicated using atomic force microscopy (AFM) not only measure but also assemble heterostructures optimize for better performance. Therefore, this review discusses various AFM methods that employed regard. It covers following areas; use attach on tip interfacial friction wear, tip-based modification chemical optoelectronic materials, manipulative scanning repositioning, interface cleaning, smoothening. This provides an up-to-date understanding new research areas guides future plans layered assembly.

Язык: Английский

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Probing Fracture Mechanics of Graphene through Heterocrack Propagation in a Moiré Superlattice

Journal of the Mechanics and Physics of Solids, Год журнала: 2025, Номер unknown, С. 106151 - 106151

Опубликована: Апрель 1, 2025

Язык: Английский

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