Опубликована: Ноя. 18, 2024
Язык: Английский
Advanced Functional Materials, Год журнала: 2025, Номер unknown
Опубликована: Янв. 28, 2025
Abstract Magnetoresistance effects, such as tunnel magnetoresistance and giant magnetoresistance, play pivotal roles in spintronics, where the coupling between spin current affects electrical resistance. These effects are fundamental for various applications, including high‐density information storage, signal transmission, processing. With growing demand magnetoresistance‐based modern devices post‐Moore era, researchers now focusing on developing using 2D magnetic materials. materials offer several advantages, a unique layered structure, high integration density, tunable room‐temperature ferromagnetism, intriguing magnetoresistive properties. This review starts with brief introduction to their typical synthesis routes, followed by preview of some classifications In particular, different applications spintronics critically discussed. Finally, challenges prospects this emerging field suggested. work highlights importance effect advancing technology, offering vital many fields ranging from memory neuromorphic computing.
Язык: Английский
Процитировано
5
Measurement, Год журнала: 2025, Номер unknown, С. 117318 - 117318
Опубликована: Март 1, 2025
Язык: Английский
Процитировано
3
Sensors and Actuators A Physical, Год журнала: 2025, Номер unknown, С. 116230 - 116230
Опубликована: Янв. 1, 2025
Язык: Английский
Процитировано
1
Journal of Materials Science, Год журнала: 2025, Номер unknown
Опубликована: Янв. 25, 2025
Язык: Английский
Процитировано
1
Sensors, Год журнала: 2025, Номер 25(3), С. 759 - 759
Опубликована: Янв. 27, 2025
Ultraviolet (UV) photodetectors play a crucial role in various applications, ranging from environmental monitoring to biomedical diagnostics. This paper presents the fabrication and characterization of high-performance UV photodetector using hexagonal boron nitride (hBN) decorated with gold nanoparticles (AuNPs). The hBN flakes were mechanically exfoliated onto SiO2 substrates, AuNPs formed via thermal evaporation, resulting creation plasmonically active surface that enhanced light absorption carrier dynamics. Raman spectroscopy, transmission electron microscopy, electrical measurements performed comprehensively analyze device structure performance. exhibited significantly improved photocurrent responsivity under UV-B (306 nm) UV-C (254 illumination, reaching an increase nearly two orders magnitude compared pristine device. These improvements are attributed synergistic effects wide bandgap localized plasmon resonance AuNPs. findings demonstrate potential AuNP-decorated for advanced photodetection applications provide pathway toward more efficient miniaturized optoelectronic devices.
Язык: Английский
Процитировано
0
Advanced Materials Technologies, Год журнала: 2025, Номер unknown
Опубликована: Фев. 13, 2025
Abstract The development of an advanced ultraviolet (UV) photodetector that integrates a polymer‐dispersed cholesteric liquid crystal (PDCLC) with ZnO nanorods (ZNRs) heterostructure is reported. ZNRs are synthesized via hydrothermal method and then spin‐coated PDCLC, resulting in notably enhanced electrical optical performance. Under 365 nm UV illumination at 5 mW cm − 2 10 V, the PDCLC‐coated array achieved high photocurrent density 171 µA , showcasing significant gains over devices without PDCLC. novel ZNRs‐PDCLC demonstrated remarkable responsivity 172.21 mA W −1 external quantum efficiency (EQE) 58.44%, substantial improvement compared to ZNRs‐only (72.27 23.39% EQE) seed layer‐based (14.48 4.8% EQE). This enhancement stems from PDCLC effective sensitization, which promotes charge carrier activation energy band alignment ZnO, dynamic, time‐responsive photodetection. These findings underscore potential heterostructures drive advances high‐performance photodetectors.
Язык: Английский
Процитировано
0
Materials Today Communications, Год журнала: 2025, Номер unknown, С. 112114 - 112114
Опубликована: Март 1, 2025
Язык: Английский
Процитировано
0
Results in Optics, Год журнала: 2025, Номер unknown, С. 100810 - 100810
Опубликована: Март 1, 2025
Язык: Английский
Процитировано
0
Advanced Functional Materials, Год журнала: 2025, Номер unknown
Опубликована: Апрель 14, 2025
Abstract Infrared (IR) photodetectors based on narrow‐bandgap 2D materials and heterojunctions have shown great promise in constructing IR sensing systems, including optical communication, security monitoring, thermal imaging, astronomy exploration. In recent years, significant progress has been made developing performance enhancement strategies for material‐based integrating them with artificial neural networks, paving the way sophisticated intelligent applications. This review offers a detailed overview of advancements enhancing photodetection capabilities fostering related First, concise underlying mechanisms key metrics designed operation region is illustrated. Next, sensitivity light absorption photodetectors, defect engineering, heterostructure construction, field enhancement, are discussed. Then, advances applications summarized, particular focus innovations that enable intelligent, real‐time processing Finally, highlights challenges provides forward‐looking perspective development advanced photodetectors.
Язык: Английский
Процитировано
0
Journal of Materials Science Materials in Electronics, Год журнала: 2025, Номер 36(16)
Опубликована: Май 31, 2025
Язык: Английский
Процитировано
0