Simultaneously optimizing power factor and thermal conductivity of n-type PbTe DOI

Wei Hu,

Tao Chen, Shenghui Wang

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(21)

Опубликована: Май 26, 2025

p-type PbTe is long recognized as an outstanding thermoelectric material in the moderate temperature range, while its n-type counterpart shows relatively poor performance. To address this issue and enhance properties of PbTe, indium (In) was selected dopant to synthesize a series Pb1−xInxTe (0.03 ≤ x 0.038) compounds, aiming regulate electron concentration transport characteristics due simultaneous increase mobility, which could be ascribed lattice regularization reduction Pb vacancies induced by In doping. As result, In-doped compound Pb0.966In0.034Te demonstrated superior Subsequently, Pb0.966In0.034Te/f-CdSe composites were fabricated, their systematically investigated. The results revealed that doping significantly increased electrical conductivity materials importantly, situ reactions between CdSe matrix led formation coherent CdIn2Te4 nanoparticles. presence these nanoparticles further enhanced power factor across entire investigated range. Moreover, thermal decreased effective scattering heat-carrying phonons point defects nano-interfaces. Consequently, sample + 0.7 wt. % exhibited optimal At 703 K, figure merit (ZT) reached 1.3, representing 34% compared Pb0.966In0.034Te, average ZT 0.75. These findings indicate incorporating into strategy improve performance PbTe.

Язык: Английский

F-POSS Nanofillers Modified PVDF Foam with Excellent Mechanical and Thermal Insulation Properties DOI
Hui Ma,

Ruijing Meng,

Hongshuai Hou

и другие.

Polymer, Год журнала: 2025, Номер unknown, С. 128316 - 128316

Опубликована: Март 1, 2025

Язык: Английский

Процитировано

0
Simultaneously optimizing power factor and thermal conductivity of n-type PbTe DOI

Wei Hu,

Tao Chen, Shenghui Wang

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(21)

Опубликована: Май 26, 2025

p-type PbTe is long recognized as an outstanding thermoelectric material in the moderate temperature range, while its n-type counterpart shows relatively poor performance. To address this issue and enhance properties of PbTe, indium (In) was selected dopant to synthesize a series Pb1−xInxTe (0.03 ≤ x 0.038) compounds, aiming regulate electron concentration transport characteristics due simultaneous increase mobility, which could be ascribed lattice regularization reduction Pb vacancies induced by In doping. As result, In-doped compound Pb0.966In0.034Te demonstrated superior Subsequently, Pb0.966In0.034Te/f-CdSe composites were fabricated, their systematically investigated. The results revealed that doping significantly increased electrical conductivity materials importantly, situ reactions between CdSe matrix led formation coherent CdIn2Te4 nanoparticles. presence these nanoparticles further enhanced power factor across entire investigated range. Moreover, thermal decreased effective scattering heat-carrying phonons point defects nano-interfaces. Consequently, sample + 0.7 wt. % exhibited optimal At 703 K, figure merit (ZT) reached 1.3, representing 34% compared Pb0.966In0.034Te, average ZT 0.75. These findings indicate incorporating into strategy improve performance PbTe.

Язык: Английский

Процитировано

0