Nanocomposite 1:2 demultiplexer based on surface-grafted poly(methacrylic acid) brushes with in situ-fabricated CdS particles
European Polymer Journal,
Год журнала:
2025,
Номер
unknown, С. 113838 - 113838
Опубликована: Фев. 1, 2025
Язык: Английский
Gate and Bias Voltage‐Modulation Photodetector Based on Cs3Bi2Br9 for Multifunctional Optoelectronic Logic Gate
Advanced Functional Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Март 31, 2025
Abstract
Optoelectronic
logic
gates
(OELGs)
are
considered
a
promising
alternative
to
traditional
electronic
gates,
thanks
their
high
computational
speed
and
low
power
consumption.
Meanwhile,
there
enormous
challenges
including
complex
structures
single‐function.
In
this
study,
the
optoelectronic
gate
device
is
prepared
merely
through
single
Cs
3
Bi
2
Br
9
photodetector.
The
bidirectional
photoresponsive
behavior
of
exhibited
under
bias
voltages
modulated
by
change
current
level.
five
fundamental
OELGs
(AND,
OR,
NOR,
NOT,
NAND)
demonstrated
successfully
applying
voltage
±1
mV.
Moreover,
can
be
adjusting
voltage.
To
create
multifunctional
array
platform,
5
×
constructed
with
100%
accuracy
for
basic
OELGs.
For
practical
applications,
these
arrays
demonstrate
great
potential
in
imaging
image
processing.
Язык: Английский
Progress in 2D Material‐Based Infrared Photodetectors for Intelligent Vision Applications
Advanced Functional Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Апрель 14, 2025
Abstract
Infrared
(IR)
photodetectors
based
on
narrow‐bandgap
2D
materials
and
heterojunctions
have
shown
great
promise
in
constructing
IR
sensing
systems,
including
optical
communication,
security
monitoring,
thermal
imaging,
astronomy
exploration.
In
recent
years,
significant
progress
has
been
made
developing
performance
enhancement
strategies
for
material‐based
integrating
them
with
artificial
neural
networks,
paving
the
way
sophisticated
intelligent
applications.
This
review
offers
a
detailed
overview
of
advancements
enhancing
photodetection
capabilities
fostering
related
First,
concise
underlying
mechanisms
key
metrics
designed
operation
region
is
illustrated.
Next,
sensitivity
light
absorption
photodetectors,
defect
engineering,
heterostructure
construction,
field
enhancement,
are
discussed.
Then,
advances
applications
summarized,
particular
focus
innovations
that
enable
intelligent,
real‐time
processing
Finally,
highlights
challenges
provides
forward‐looking
perspective
development
advanced
photodetectors.
Язык: Английский
Demonstration of AlGaN/GaN HEMT-based non-classical optoelectronic logic inverter
Applied Physics Letters,
Год журнала:
2025,
Номер
126(17)
Опубликована: Апрель 28, 2025
AlGaN/GaN
high
electron
mobility
transistor
(HEMT)
has
excellent
promise
for
developing
industrially
viable
optoelectronic
logic
gates
(OELGs).
We
demonstrate
HEMT-based
non-classical
inverter
circuit
(OLIC)
serving
as
the
primary
step
toward
realization
of
complex
OELGs.
The
OLIC
consists
a
Schottky
diode
(SD)
and
phototransistor
(PT)
fabricated
on
HEMT
epi-structure
SiC
substrate.
SD
PT
work
load
driver,
respectively,
so
that
voltage
signals
could
be
easily
extracted
output
in
response
to
electrical
optical
inputs
with
suitable
gate
biasing.
Simple
fabrication
process
technological
compatibility
our
will
provide
promising
solution
can
extended
advanced
computing
circuits.
Язык: Английский
Optical Learning and Reconfigurable Logic Utilizing Halide Perovskite Thin Film Transistors
Small,
Год журнала:
2025,
Номер
unknown
Опубликована: Май 2, 2025
Abstract
Metal
halide
perovskites
with
their
superior
electronic
properties,
solution
processibility,
and
scalability,
are
promising
candidates
for
optoelectronic
applications
such
as
solar
cells
LEDs.
Although
of
importance
ubiquitous,
intelligent
electronics,
reports
on
the
application
thin
film
transistors
(TFTs)
fabricated
from
sparse,
primarily
due
to
operational
conditions
limitations
stability
issues.
Precise
control
composition,
microstructure
well
novel
chemical
treatments
have
been
proposed
solutions
this
quandary.
Here,
a
room
temperature
n‐type
solution‐processed
Cs
0.05
(MA
0.15
FA
0.7
)Pb(Br
0.5
I
2.4
)
triple
cation
transistor
enabled
using
tin‐doped
indium
oxide
source/drain
contacts
is
reported.
Optical
learning
demonstrated
by
exploiting
inherent
photo
response
perovskite
channel
gate
bias
modulation
capability
TFT
optical
pixels.
The
pixels
show
modulatable
forgetting
behavior
training
alphabets.
Noise‐free
relearning
also
demonstrated.
Finally,
utilized
demonstrate
reconfigurable
logic,
switchable
between
‘OR’
‘AND’
states,
demonstrating
versatility
pixel.
Язык: Английский
Polarity-tunable dye-sensitized optoelectronic artificial synapses for physical reservoir computing-based machine vision
Scientific Reports,
Год журнала:
2025,
Номер
15(1)
Опубликована: Май 12, 2025
Abstract
Conventional
machine
vision
systems
process
huge
time-series
data
per
second,
presenting
significant
challenges
for
edge-device
applications
due
to
limitations
in
transfer
and
storage.
Inspired
by
the
human
visual
system,
artificial
optoelectronic
synapses
replicating
synaptic
responses
have
emerged
as
promising
solutions.
However,
achieving
color
recognition
comparable
remains
challenging.
Moreover,
most
rely
on
photocurrent-based
operation,
producing
low
current
values
necessitating
external
circuits.
This
study
reports
a
self-powered
synapse
capable
of
distinguishing
wavelengths
with
resolution
10
nm
integrating
dye-sensitized
solar
cells.
The
device
exhibits
light
pulses
bipolar
when
exposed
different
wavelengths.
wavelength-dependent
behavior
enables
exceptional
separation
capabilities,
six-bit
64
distinct
states
supporting
multiple
logic
operations,
including
AND,
OR,
XOR,
within
single
device.
Additionally,
leverages
red,
green,
blue
irradiation
physical
reservoir
computing,
facilitating
classification
color-coded
motion
an
accuracy
82%.
These
findings
advance
development
precise,
human-eye-like
discrimination.
Язык: Английский
WSe2‐Based Multifunctional Optoelectronic Device for Processing Circuits (MOD‐PC)
Advanced Functional Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Май 19, 2025
Abstract
This
study
reports
a
WSe
2
based
two‐terminal,
all‐in‐one
semiconductor
device,
acronym
as
Multifunctional
Optoelectronic
Device
for
Processing
Circuits
(MOD‐PC)
realizing
analog,
digital,
and
mixed‐signal
processing
blocks
within
single
cell
eliminating
the
dependency
on
Complementary
Metal‐Oxide
Semiconductor
(CMOS)
counterparts
neuromorphic
computing
applications.
2D‐Material
photodetectors
are
fabricated
exhibiting
high
detectivity
upto
2.5×
10
11
Jones
0.92
A
W
–1
responsivity
with
scaled
cross‐sectional
area.
Moreover,
opto‐electric
signal
circuits
experimentally
demonstrated,
e.g.,
Analog
Optoelectronic‐Synapse
(O‐Synapse),
Digital
Logic
(O‐Logic)
[AND,
OR
logic]
gates,
novel
Digital‐to‐Analog
Converter
(O‐DAC)
circuit.
To
best
of
authors'
knowledge,
this
is
first
to
truly
demonstrate
circuit
applications
two
terminal
mechanically
exfoliated
optoelectronic
homostructure
device.
Furthermore,
all‐above
functionalities
implemented
photodetector,
even
without
modifying
electrical
schematic
or
no
additional
components
requirement,
thus
overcoming
area
bottlenecks.
The
electro‐optic
enabled
3‐bit
O‐DAC
exhibits
52×
device
count
reduction
(thus
savings)
≈13.2
×
6
power
efficiency
in‐contrast
CMOS/
BiCMOS/
GaN‐HEMT
counterparts.
proposed
O‐Logic
gates
4×
6×
⩾24×
energy
savings
compared
conventional
emerging
technologies
designs.
Язык: Английский
Ferroelectric-Based Optoelectronic Synapses for Visual Perception: From Materials to Systems
Nanomaterials,
Год журнала:
2025,
Номер
15(11), С. 863 - 863
Опубликована: Июнь 4, 2025
More
than
70%
of
the
information
humans
acquire
from
external
environment
is
derived
through
visual
system,
where
photosensitive
function
plays
a
pivotal
role
in
biological
perception
system.
With
rapid
development
artificial
intelligence
and
robotics
technology,
achieving
human-like
has
attracted
great
amount
attention.
The
neuromorphic
system
provides
novel
solution
for
efficient
low-power
processing
by
simulating
working
principle
In
recent
years,
ferroelectric
materials
have
shown
broad
application
prospects
field
due
to
their
unique
spontaneous
polarization
characteristics
non-volatile
response
behavior
under
regulation.
Especially
tunable
retinal
neural
synapses,
storage
processing,
constructing
dynamic
sensing,
performance
advantages.
this
review,
progress
based
on
discussed,
elaborating
detail
device
structure,
material
systems,
applications,
exploring
potential
future
trends
challenges
faced
field.
Язык: Английский