Photostable Inorganic Perovskite Absorber via Thermal Evaporation for Monolithic Perovskite/Perovskite/Silicon Triple‐Junction Solar Cells DOI Creative Commons
Yashika Gupta,

Minasadat Heydarian,

Maryamsadat Heydarian

и другие.

Progress in Photovoltaics Research and Applications, Год журнала: 2025, Номер unknown

Опубликована: Май 8, 2025

ABSTRACT Monolithic perovskite/perovskite/silicon triple‐junction solar cells have the potential to exceed efficiency limits of perovskite/silicon dual‐junction cells. However, development technology faces several significant hurdles, including and integration a stable high bandgap perovskite absorber into monolithic structure. Key issues include light‐induced halide segregation in mixed perovskites risk solvent damage underlying layers during top‐cell deposition. To overcome these challenges, we developed bandgap, inorganic absorber, CsPbI 2 Br, using thermal evaporation at room temperature, eliminating need for post‐deposition annealing. The resulting films exhibited 1.88 eV demonstrated good photostability without any signs under continuous illumination probed over 3 h. Additionally, offers scalable approach large‐scale production, further enhancing widespread adoption this technology. This advancement enabled incorporation Br device as absorber. Consequently, first with an all‐inorganic technique, achieving 21%, open‐circuit voltage 2.83 V active area 1 cm . underwent 100 h fixed measurement near maximum power point ambient conditions encapsulation. Remarkably, it not only withstood but also improved ~22% afterwards, demonstrating stability reliability our thermally evaporated absorber‐based cell applications.

Язык: Английский

Photostable Inorganic Perovskite Absorber via Thermal Evaporation for Monolithic Perovskite/Perovskite/Silicon Triple‐Junction Solar Cells DOI Creative Commons
Yashika Gupta,

Minasadat Heydarian,

Maryamsadat Heydarian

и другие.

Progress in Photovoltaics Research and Applications, Год журнала: 2025, Номер unknown

Опубликована: Май 8, 2025

ABSTRACT Monolithic perovskite/perovskite/silicon triple‐junction solar cells have the potential to exceed efficiency limits of perovskite/silicon dual‐junction cells. However, development technology faces several significant hurdles, including and integration a stable high bandgap perovskite absorber into monolithic structure. Key issues include light‐induced halide segregation in mixed perovskites risk solvent damage underlying layers during top‐cell deposition. To overcome these challenges, we developed bandgap, inorganic absorber, CsPbI 2 Br, using thermal evaporation at room temperature, eliminating need for post‐deposition annealing. The resulting films exhibited 1.88 eV demonstrated good photostability without any signs under continuous illumination probed over 3 h. Additionally, offers scalable approach large‐scale production, further enhancing widespread adoption this technology. This advancement enabled incorporation Br device as absorber. Consequently, first with an all‐inorganic technique, achieving 21%, open‐circuit voltage 2.83 V active area 1 cm . underwent 100 h fixed measurement near maximum power point ambient conditions encapsulation. Remarkably, it not only withstood but also improved ~22% afterwards, demonstrating stability reliability our thermally evaporated absorber‐based cell applications.

Язык: Английский

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