Advanced Functional Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Сен. 18, 2024
Abstract
Top‐contact
bottom‐gate
pentacene
OFETs
are
fabricated
with
single
layer
dielectrics
comprised
of
either
polystyrene
(PS),
poly(4‐methylstyrene)
(P4MS),
or
poly(4‐tert‐butylstyrene)
(P4TBS).
The
polystyrenes
blended
varying
concentrations
two
different
small
molecules,
dibenzotetrathiafulvalene
(DBTTF)
and
2,8‐difluoro‐5,11‐bis(triethylsilylethynyl)anthradithiophene
(diF‐TES‐ADT),
to
form
small,
separated
crystallites
contained
throughout
the
polymer
dielectric
layer.
OFET
characteristics
these
devices
investigated
their
threshold
voltage
shifts
measured
after
−70
V
static
charging
for
5
min.
Two‐terminal
measurements
conducted
using
multiple
gate
biases
in
range
−50
+50
investigate
memristor
behavior
devices.
containing
DBTTF
exhibited
ΔV
th
increases
as
large
330%
relative
control
no
DBTTF,
while
at
least
7.5
wt.%
activity,
currents
ranging
from
20
nA
44
µA
depending
on
applied
bias.
This
work
demonstrates
that
including
enhances
charge
storage
ability
can
be
promising
creating
nonbinary
memory
data
processing.
Additionally,
observed
activity
indicates
this
used
development
neuromorphic
systems
aim
mimic
synaptic
human
nervous
system.
ACS Applied Electronic Materials,
Год журнала:
2023,
Номер
5(7), С. 3885 - 3893
Опубликована: Июль 5, 2023
In
this
work,
the
impact
of
symmetric
and
asymmetric
electrodes
on
resistive
switching
(RS)
behavior
nanoscale
Y2O3-based
memristor
is
investigated
with
experiments.
addition,
extracted
parameters
are
validated
systemic
modeling.
Memristor
growth
deployed
by
utilizing
a
dual
ion
beam
sputtering
(DIBS)
system,
simulation
carried
out
in
semiconductor
physics-based
tool,
i.e.,
COMSOL
Multiphysics
defined
MATLAB
script.
The
performed
work
based
minimum
free
energy
used
materials
at
an
applied
certain
voltage.
simulated
results
exhibit
stable
pinched
hysteresis
loop
RS
responses
either
or
electrode
combinations
efficient
ON/OFF
current
ratio
show
close
match
experimental
results.
Moreover,
devices
synaptic
plasticity
functionalities
terms
potentiation
depression
processes
almost
ideal
linearity
factor
for
both
similar
to
realistic
data.
Therefore,
present
efficiently
depicts
suitability
material
Y2O3
layer
enhance
electrical
performance
integrate
into
artificial
synapse
neuromorphic
computations.
