Catalysts,
Год журнала:
2025,
Номер
15(1), С. 59 - 59
Опубликована: Янв. 10, 2025
This
work
examines
the
solar
photocatalytic
degradation
of
antibiotic
sulfamethoxazole
(SMX)
using
molybdenum
telluride
(MoTe2)-promoted
bismuth
oxychloride
(BiOCl).
Different
loadings
in
0–1%
range
on
BiOCl
were
synthesized
and
evaluated.
Although
presence
MoTe2
did
not
alter
either
adsorption
capacity
or
energy
gap
BiOCl,
photocatalyst
demonstrated
higher
activity
due
to
enhanced
separation
photogenerated
pairs.
The
0.5MoTe2/BiOCl
achieved
a
kinetic
constant
nearly
2.8
times
than
that
pure
leading
elimination
500
μg/L
SMX
within
90
min.
system’s
performance
was
under
neutral
acidic
conditions
lower
concentrations.
Based
experiments
with
radical
scavengers,
holes
appeared
be
dominant
species,
contribution
reactive
species
following
order
h+>O2•−/e−>1O2>HO•.
Interestingly,
different
water
matrices,
diminished
even
increased
by
20%,
likely
because
action
selectivity
secondary
generated
radicals.
retained
>
90%
its
after
three
sequential
experiments.
Finally,
four
transformation
products
from
photodegradation
identified
via
UHPLC-TOF-MS,
pathway
is
proposed.
Inorganic Chemistry,
Год журнала:
2025,
Номер
unknown
Опубликована: Янв. 16, 2025
The
substantial
structural
defects
frequently
observed
in
fabricated
transition-metal
dichalcogenide
(TMD)
samples
inevitably
affect
the
device
performance.
molybdenum
telluride
(MoTe2)
monolayer
can
easily
generate
phase
transitions
between
1H
and
1T′
phases
due
to
a
small
energy
barrier.
However,
distinguishing
identifying
various
during
experiments
is
challenging.
In
this
study,
we
comprehensively
explore
point
grain
boundaries
MoTe2
using
first-principles
calculations.
We
simulate
corresponding
scanning
tunneling
microscopy
(STM)
transmission
electron
(TEM)
images
characterize
different
types
of
defects.
same
type
exhibits
lower
formation
energies
than
those
phase.
form
more
easily,
with
ranging
from
0.07
0.14
eV/Å.
partial
densities
states
indicate
that
electronic
properties
60°,
60°-glide,
120°
(GBs)
are
similar,
while
defect
rings
differ
significantly.
Our
theoretical
results
effectively
reduce
primary
cost
characterizing
provide
essential
guidance
for
experimental
references
identifications.
Applied Physics Letters,
Год журнала:
2025,
Номер
126(9)
Опубликована: Март 1, 2025
The
van
der
Waals
junction
of
two-dimensional
materials
has
the
characteristics
weak
interlayer
interaction
and
strong
light–mass
interaction.
internal
electric
field
formed
at
interface
Van
promotes
separation
efficient
transfer
photogenerated
carriers,
showing
low
power
consumption,
self-drive,
high
responsiveness,
ultrafast
response.
Therefore,
we
fabricate
a
transverse
homojunction
photodetector
by
mechanical
stripping.
Furthermore,
considering
influence
contact
between
two
sides
metal
electrodes,
select
electrodes
corresponding
to
matching
work
function
according
Fermi
level
with
different
thicknesses
MoTe2,
anti-barrier
layers
are
obtained.
Finally,
self-driven
Au-thin
MoTe2-thick
MoTe2–Ni/Au
structure
is
fabricated,
which
improves
photosensitivity
response
time,
broadens
spectral
detection
range.
When
Vds
=
0
V,
rectifier
ratio
increases
4.6
×
103,
50
times
higher
than
that
symmetrical
electrode
homojunction.
Under
zero
bias
voltage,
when
spot
area
3
10−9
m2,
reaches
28
mA/W
(637
nm),
time
38.83/40.17
μs,
infrared
extended
1550
nm.
It
potential
applications
in
optoelectronics
optical
signal
detection.
A
programmable
2H-MoTe2
floating-gate
field-effect
transistor
(FGFET)-based
complementary
metal
oxide
semiconductor
(CMOS)
array
has
been
fabricated
on
the
grown
substrate.
Coplanar
metallic
1T′-MoTe2
serves
as
source
and
drain
electrodes.
The
conductive
type
of
channel
is
manipulated
by
a
top-gate
engineering
method.
typical
FGFET-based
CMOS
device
memory
window
large
∼10.6
V
power
consumption
low
0.39
nW.
threshold
voltage
output
can
be
modulated
programming
pulses.
Various
stable
reproducible
logic
functions
are
implemented.
high
yield
90%.
We
attribute
our
achievement
to
high-quality
CVD-grown
large-scale
2H/1T′-MoTe2
coplanar
heterostructure,
novel
method
for
p/n-type
conversion
2H-MoTe2,
reliable
process
that
compatible
with
silicon-based
process.
This
innovative
integration
opens
way
realizing
energy-efficient
logic-in-memory
circuits
based
two-dimensional
transition
dichalcogenides.
Nanomaterials,
Год журнала:
2025,
Номер
15(9), С. 666 - 666
Опубликована: Апрель 27, 2025
As
a
critical
storage
technology,
the
material
selection
and
structural
design
of
flash
memory
devices
are
pivotal
to
their
density
operational
characteristics.
Although
van
der
Waals
materials
can
potentially
take
over
scaling
roadmap
silicon-based
technologies,
mechanisms
optimization
principles
at
low-dimensional
scales
remain
be
systematically
unveiled.
In
this
study,
we
experimentally
demonstrated
that
floating-gate
length
significantly
affect
window
characteristics
devices.
Experiments
involving
various
tunneling-layer
configurations,
combined
with
TCAD
simulations,
were
conducted
reveal
electrostatic
coupling
behaviors
between
floating
gate
source/drain
electrodes
during
shaping
charge
capabilities.
Fundamental
performance
designed
devices,
including
large
ratio
(82.25%),
good
retention
(>50,000
s,
8
states),
considerable
endurance
(>2000
cycles),
further
validate
role
topological
structures
in
manipulating
offering
valuable
insights
drive
development
next-generation
technologies.
Advanced Electronic Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Май 19, 2025
Abstract
Transition
metal
dichalcogenides
(TMDCs)
heterojunctions,
with
their
atomically
precise
planar
structures,
enable
the
formation
of
smooth
and
well‐matched
interfaces
between
different
TMDCs
components,
effectively
mitigating
performance
losses
caused
by
lattice
mismatches
rendering
them
highly
suitable
for
applications
in
advanced
devices,
including
2D
photodetectors,
flexible
light‐emitting
diodes,
high‐mobility
field‐effect
transistors,
solar
cells.
Lateral
owing
to
covalent
bonding
distinct
phases,
demonstrate
high
carrier
mobility,
significantly
lowering
contact
resistance
at
interface.
However,
fabrication
lateral
heterojunctions
is
limited
several
factors,
randomness,
interfacial
quality,
process
reproducibility.
In
this
study,
a
straightforward
laser
irradiation
method
inducing
phase
transitions
MoTe₂
presented.
By
optimizing
power
exposure
duration,
multilayer
2H
‐MoTe₂
encapsulated
h
‐BN
successfully
transformed
into
1T′
phase,
as
verified
Raman
spectroscopy.
Moreover,
temperature‐dependent
spectroscopy
performed
on
laser‐induced
‐MoTe₂,
which
demonstrated
transformation
T
d
≈230K,
suggesting
structural
quality
laser‐irradiated
‐MoTe₂.
These
results
practical
approach
engineering
MoTe₂,
providing
valuable
insights
future
high‐performance
photoelectric
devices.
