Characterization and High‐Frequency Applications of Barium Antimonide Thin Films for Voltage‐Controlled Negative Capacitance and 6G Technology DOI
A. F. Qasrawi

physica status solidi (a), Год журнала: 2024, Номер 221(20)

Опубликована: Авг. 1, 2024

Herein, films of barium antimonides (BaSb) are fabricated by a thermal deposition technique under vacuum pressure 10 −5 mbar. BaSb exhibit orthorhombic lattice. Over wide range scans, the mostly stoichiometric, displaying atomic contents 50.17 and 49.83 at% for Ba Sb, respectively. Morphological analyses these show growth large grains with sizes ranging from 1.64 to 4.14 μm. Dynamic electrical measurements on Ag/BaSb/Ag conducted in frequency domain 0.01–1.80 GHz. The display features voltage‐controlled negative capacitance source (VCNC) resonance–antiresonance peaks at critical Lorentz models spectral indicate that they correspond high‐frequency value 2.8 nF, density oscillators 4 × cm −3 , scattering time constant τ = 100 ns. Additionally, variety cutoff spectra, making them suitable applications. varies 2.6 GHz 1.0 THz as driving increases VCNC sources, behavior, high make thin promising thin‐film transistors 6 G technology

Язык: Английский

High photovoltaic performance of an emerging lead-free chalcogenide perovskite BaHfS3 under high pressure DOI
Brij Kumar Bareth, Madhvendra Nath Tripathi

Solar Energy Materials and Solar Cells, Год журнала: 2025, Номер 282, С. 113445 - 113445

Опубликована: Янв. 24, 2025

Язык: Английский

Процитировано

1
BaO/Se heterojunctions designed as effective light Absorbers, terahertz optical filters and microwave waveguides DOI
A. F. Qasrawi

Materials Science and Engineering B, Год журнала: 2025, Номер 318, С. 118322 - 118322

Опубликована: Апрель 18, 2025

Язык: Английский

Процитировано

0
Characterization and High‐Frequency Applications of Barium Antimonide Thin Films for Voltage‐Controlled Negative Capacitance and 6G Technology DOI
A. F. Qasrawi

physica status solidi (a), Год журнала: 2024, Номер 221(20)

Опубликована: Авг. 1, 2024

Herein, films of barium antimonides (BaSb) are fabricated by a thermal deposition technique under vacuum pressure 10 −5 mbar. BaSb exhibit orthorhombic lattice. Over wide range scans, the mostly stoichiometric, displaying atomic contents 50.17 and 49.83 at% for Ba Sb, respectively. Morphological analyses these show growth large grains with sizes ranging from 1.64 to 4.14 μm. Dynamic electrical measurements on Ag/BaSb/Ag conducted in frequency domain 0.01–1.80 GHz. The display features voltage‐controlled negative capacitance source (VCNC) resonance–antiresonance peaks at critical Lorentz models spectral indicate that they correspond high‐frequency value 2.8 nF, density oscillators 4 × cm −3 , scattering time constant τ = 100 ns. Additionally, variety cutoff spectra, making them suitable applications. varies 2.6 GHz 1.0 THz as driving increases VCNC sources, behavior, high make thin promising thin‐film transistors 6 G technology

Язык: Английский

Процитировано

0