Next research., Год журнала: 2024, Номер 1(2), С. 100055 - 100055
Опубликована: Ноя. 1, 2024
Язык: Английский
Next research., Год журнала: 2024, Номер 1(2), С. 100055 - 100055
Опубликована: Ноя. 1, 2024
Язык: Английский
Materials, Год журнала: 2025, Номер 18(1), С. 186 - 186
Опубликована: Янв. 4, 2025
Perovskite solar cells (PSCs) are regarded as extremely efficient and have significant potential for upcoming photovoltaic technologies due to their excellent optoelectronic properties. However, a few obstacles, which include the instability high costs of production lead-based PSCs, hinder commercialization. In this study, performance cell with configuration FTO/CdS/BaZrS3/HTL/Ir was optimized by varying thickness perovskite layer, hole transport temperature, electron layer (ETL)’s defect density, absorber energy band, work function back contact. Various layers (HTLs), including Cu2O, CuSCN, P3HT, PEDOT:PSS, were assessed select best materials that would achieve stability in PSC devices. At optimal levels, PEDOT:PSS reached maximum power conversion efficiency (PCE) 18.50%, while Cu2O exhibited PCE 5.81, 10.73, 9.80%, respectively. The attributed better band alignment between and, thus, low recombination photogenerated charges. other parameters device short-circuit current density (Jsc) 23.46 mA cm−2, an open-circuit voltage (Voc) 8.86 (V), fill factor (FF) 8.90%. This study highlights chalcogenide-based PSCs stable alternative traditional cells, successful optimization paving way future research on eco-friendly scalable methods.
Язык: Английский
Процитировано
2Renewable Energy, Год журнала: 2025, Номер unknown, С. 122365 - 122365
Опубликована: Янв. 1, 2025
Язык: Английский
Процитировано
1Next Energy, Год журнала: 2024, Номер 6, С. 100182 - 100182
Опубликована: Сен. 3, 2024
Язык: Английский
Процитировано
6Deleted Journal, Год журнала: 2024, Номер 1(4), С. 100018 - 100018
Опубликована: Сен. 11, 2024
Язык: Английский
Процитировано
5IET Optoelectronics, Год журнала: 2024, Номер 18(4), С. 96 - 120
Опубликована: Июнь 6, 2024
Abstract Among the emerging photovoltaic technologies, solid‐state dye‐sensitised solar cells (ssDSSCs) have attracted considerable interest due to their cost‐effective production, adjustable characteristics, and potential for lightweight flexible applications. Nevertheless, achieving efficiencies comparable established such as perovskite silicon‐based devices, proven challenging. Herein, device structure, Pt/PEDOT: PSS/N719 dye/PC 61 BM/ITO is investigated theoretically using cell capacitance simulator (SCAPS‐1D). Groundbreaking advancement introduced in ssDSSC design, remarkable theoretical power conversion efficiency of 20.73%, surpassing performance reported traditional dye‐based technologies. The model demonstrates an exceptional Fill factor 86.64%, indicating efficient current collection; along with a modest short‐circuit density ( J sc ) 22.38 mA/cm 2 impressive open‐circuit voltage V oc 1.0691 V, highlighting light absorption charge separation. Mott–Schottky analysis parasitic resistances (series shunt) been thoroughly discussed. Despite fact that only numerical simulation involved, proposed ssDSSCs structure gives insights into fabrication highly can be injected production workflow order advance technology DSSC.
Язык: Английский
Процитировано
4Coatings, Год журнала: 2025, Номер 15(3), С. 255 - 255
Опубликована: Фев. 20, 2025
Recently, the numerical simulation of solar cells has attracted tantamount scientific attention in photovoltaic community because it saves on research time and resources before actual fabrication devices laboratories. Despite significant advancements quantum dot-sensitized (QDSSCs), power conversion efficiency (PCE) is still low when compared to other such as perovskite. This gap poses a substantial challenge harnessing full potential QDSSCs for widespread adoption renewable energy applications. Enhancing imperative their commercial viability deployment. In this work, SCAPS-1D was used QDSSCs. The cell with general configuration FTO/TiO2/PbS/HTL/Au investigated. device, PbS dots were inserted absorber layer, TiO2 electron transport layer (ETL), gold back contact, following inorganic materials, i.e., copper (I) iodide (CuI), oxide (Cu2O), cadmium zinc telluride selenide (CZTSe), iron tin sulfide (CFTS), (CZTSSe) tested HTL FTO acted conductive substrate. best material exhibited PCE 22.61%, fill factor (FF) 84.67%, an open circuit voltage (Voc) 0.753 V, current density (Jsc) 35.48 mA cm−2. study contributes field by employing simulations optimize QDSSCs, exploring novel materials these identifying CZTSSe promising low-cost that significantly enhances both performance
Язык: Английский
Процитировано
0Materials Research Bulletin, Год журнала: 2025, Номер unknown, С. 113488 - 113488
Опубликована: Апрель 1, 2025
Язык: Английский
Процитировано
0Next research., Год журнала: 2024, Номер 1(2), С. 100055 - 100055
Опубликована: Ноя. 1, 2024
Язык: Английский
Процитировано
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