Advanced Energy Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Март 4, 2025
Abstract
Indium
sulfide
(In
2
S
3
)
as
water
splitting
photocatalyst
has
been
broadly
investigated
due
to
its
narrow
bandgap
(2.0–2.3
eV)
and
optimized
opto‐electronic
properties.
However,
In
still
suffers
from
a
rapid
photogenerated
charge
carrier
recombination
rate.
addition,
the
main
group
metals
(such
In)
lack
active
d
‐orbital
electrons
for
catalysis,
thus
limits
activation
of
intermediates
during
catalytic
reaction.
Herein,
overcome
above
limitations
,
/TiO
heterojunction
with
sulfur
defects
are
constructed
by
temperature
control
strategy.
The
vacancy
(Sv)
can
induce
electron
density
transformation
5
p
localized
states
delocalized
states,
which
efficiently
enhances
chemical
affinity
*
OOH.
Thus,
interaction
between
O
atoms
greatly
facilitates
rate‐determining
step
(
OOH
→
+O
),
realizing
high
yield
rate
10.00
µmol
cm
−2
h
−1
at
1.23
V
versus
RHE.
Furthermore,
heterogeneous
structure
also
enhance
interfacial
electric
field
(IEF)
stability
promoting
oxygen
generation.
This
work
provides
an
efficient
pathway
improve
photoelectrochemical
(PEC)
activity
manipulating
delocalization
through
defect
engineering.
