Research Square (Research Square),
Год журнала:
2025,
Номер
unknown
Опубликована: Май 20, 2025
Abstract
In
this
study,
nanostructured
thin
films
based
on
cadmium
oxide
doped
with
Indium
CdO:
were
fabricated
by
sol-gel
spin-coating
technique
p-type
monocrystalline
silicon
c-Si
(p)
for
the
integration
in
n-p
heterojunction
photodiode
applications.
A
comprehensive
analysis
structural,
morphological,
compositional,
optical
and
electrical
properties
of
surface
undoped
CdO
CdO:In
substrates
is
conducted.
Upon
doping,
cubic
structure
polycrystalline
film
preferential
(111)
orientation
are
maintained.
uniformly
distributed
nanostructures
network,
average
grain
size
CdO/Si
decreased
from
35
nm
to
23
CdO:In/Si.
Smooth
heterointerfaces
good
adhesion
CdO-based
Si
substrate
imply
suitable
quality
favorize
passivation
transport.
Based
chemical
composition
electronic
states
analysis,
dopants
uniform
distribution
incorporation
In3+ion
substitution
quasi-stoichiometric
confirmed.
The
anti-reflection
role
validated
through
lower
reflectance
compared
bare
substrate,
especially
visible
range.
current-voltage
I-V
characteristics
dark
under
illumination
conditions
employed
determine
main
diode
parameters
different
Cd
(n)/
structures.
clear
rectifying
behavior
asymmetrical
non-linear
dependency
obtained
heterojunctions.
Compared
films,
doping
leads
higher
ideality
factor
reverse
saturation
current,
but
potential
barrier
series
resistance.
Higher
photogenerated
current
at
region
more
light
sensitivity
CdO:In/Si
owing
better
transparency
wider
bandgap
than
film.Owing
conduction
band
offset
heterojunction,
charge
carrier
transport
improved
diode.
Our
results
demonstrate
effective
In-doped
