Electrically tunable interlayer recombination and tunneling behavior in WSe₂/MoS₂ heterostructure for broadband photodetector

Nanoscale, Год журнала: 2024, Номер 16(12), С. 6241 - 6248

Опубликована: Янв. 1, 2024

A dual-gated WSe 2 /MoS phototransistor is fabricated and investigated. Its conduction rectification characteristics can be tuned by dual gates showing p–i, p–n, i–n n–n states, due to the charging depletion of MoS .

Язык: Английский

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Cutting Edge High‐Throughput Synthesis and Characterization Techniques in Combinatorial Materials Science

Advanced Materials Technologies, Год журнала: 2024, Номер 9(10)

Опубликована: Март 8, 2024

Abstract The Materials Genome Initiative is expected to accelerate the materials discovery and design by fundamentally changing trial‐and‐error research paradigm. However, mass data from high‐throughput experiments still essential for revelation of rules verification theories. In fact, development combinatorial science always on strength upgrade evolution techniques in each stage, especially synthesis characterization. Herein, this review summarizes methods libraries, co‐deposition masking thin‐film fabrication; details characterization specific material properties typical categories, which comes down spectroscopy microscopy techniques. It considered that concepts will be predominant lab experimentation future, along with advanced experimental convenient processing procedures. Before that, more cooperation between multiple researchers different fields should conducted complete research, since technology covers disciplines a huge span.

Язык: Английский

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Sb₂Se₃ Nanosheet Film-Based Devices for Ultraviolet Photodetection and Resistive Switching

ACS Applied Nano Materials, Год журнала: 2023, Номер 6(17), С. 15397 - 15407

Опубликована: Авг. 29, 2023

The development of multifunctional devices could represent a significant advancement in meeting the need for nano and micro technologies. Therefore, we have developed Ag/Sb2Se3/FTO-based multifunction device having nanostructures, which works as an ultraviolet (UV) photodetector switching device. Our theory suggests how oxygen formation leads to detection UV range rather than infrared range, is natural Sb2Se3. m–s–m based on photoconductive phenomenon, ultrafast transient absorption spectroscopy has been extensively used investigate charge carrier dynamics Sb2Se3 films 500 nm. At two distinct excitations, 375 nm 532 visible light, pulse energy 1 J per pulse, effect annealing relaxation was investigated. kinetics hot carrier's decay recombination were studied both as-grown annealed films. proposed analyzed with help X-ray photoelectron density functional studies. shows external quantum efficiency values 2.9 1.3 at 386 nm, respectively. rise time fall ratio 0.29/0.30 s irradiation 2 V bias power 32 mW/cm2. same bipolar resistive switching, resistance shifts from high state low voltage sweep −1 0 then V. result phenomenon reasonably justified by electrochemical metallization phenomenon. An outstanding accomplishment electronic combining different features single

Язык: Английский

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Crystalline Orientation‐Tunable Growth of Hexagonal and Tetragonal 2H─PtSe₂ Single‐Crystal Flakes

Advanced Functional Materials, Год журнала: 2023, Номер 34(6)

Опубликована: Окт. 25, 2023

Abstract Due to the narrow bandgap, environment stability, and Pt vacancy‐induced magnetism, PtSe 2 has been considered a promising candidate for future broadband photodetection electronics. However, growth of single‐crystal is still challenge. Herein, synthesis hexagonal tetragonal 2H─PtSe flakes by precisely tailoring temperature reported. Through atomic structure analysis, are proven c ‐axis orientations , indicating preferred nucleation along basal plane vertically plane, respectively. The crystalline orientation‐dependent properties studied including high‐pressure polarized in situ‐Raman, electrical transport. out‐of‐basal vibration (A 1g ) sensitive pressure showing 2.744 3.282 cm −1 GPa corresponding ‐2H─PtSe conductivity 57 times higher than that . Furthermore, studying magnetic transport at low temperatures, both exhibit butterfly‐shaped magnetoresistance hysteresis suggesting their ferromagnetic property. | MR ratio coercive field compared with across multilayer carrier regulation more difficult intra‐layer This study opens way grow different 2D materials will bring abundant properties.

Язык: Английский

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A strain modulated and self-powered broadband photodetector based on MoS2/Sb2Te3 heterojunction

Опубликована: Окт. 5, 2023

The accelerated advancements in nanophotonic technologies have amplified the requirements for optoelectronic devices. These now encompass need compact design, rapid operation, enhanced efficiency, and reduced power consumption. Meeting these evolving demands necessitates development of innovative material frameworks aligned with emerging technological standards. In this context, we unveil our latest research findings, accentuating exploitation low-dimensional materials to pioneer photodetector electro-optic modulator functionalities. Drawing from emergent field 'strainoptronics' work elucidates its capability modulate a variety properties: bandgap, function, mobility. Moreover, harnessing principles scaling-length theory, chart progression empirical outcomes related high gain-bandwidth product photodetectors. This encompasses amalgamation metal slot silicon photonic waveguide aimed at refining carrier-lifetime-to-transit time ratio. Additionally, 2D PN junction photodetector, operable zero bias, emerges as vanguard curtailing dark currents, resulting remarkably efficient noise-equivalent outputs. Furthermore, recognizing surging interest wearable technology, also delves into integration flexible substrates. We elucidate symbiotic relationship between innovations Photonic Integrated Circuits (PICs), highlighting potential developments serve foundational building blocks next generation compact, efficient, integrative PICs. Our presents confluence approaches amalgamations, poised redefine device performance tandem contemporary paradigms dynamic landscape technology integrated circuits.

Язык: Английский

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