Bionic Recognition Technologies Inspired by Biological Mechanosensory Systems

Advanced Materials, Год журнала: 2025, Номер unknown

Опубликована: Янв. 21, 2025

Abstract Mechanical information is a medium for perceptual interaction and health monitoring of organisms or intelligent mechanical equipment, including force, vibration, sound, flow. Researchers are increasingly deploying recognition technologies (MIRT) that integrate acquisition, pre‐processing, processing functions expected to enable advanced applications. However, this also poses significant challenges acquisition performance efficiency. The novel exciting mechanosensory systems in nature have inspired us develop superior bionic (MIBRT) based on materials, structures, devices address these challenges. Herein, first strategies pre‐processing presented their importance high‐performance highlighted. Subsequently, design considerations sensors by mechanoreceptors described. Then, the concepts neuromorphic summarized order replicate biological nervous system. Additionally, ability MIBRT investigated recognize basic information. Furthermore, further potential applications robots, healthcare, virtual reality explored with view solve range complex tasks. Finally, future opportunities identified from multiple perspectives.

Язык: Английский

---

Enhanced Carrier Dynamics and Excitation of Optically Stimulated Artificial Synapse Using van der Waals Passivation Layers

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Янв. 13, 2025

Advances in the semiconductor industry have been limited owing to constraints imposed by silicon-based CMOS technology; hence, innovative device design approaches are necessary. This study focuses on "more than Moore" approaches, specifically neuromorphic computing. Although MoS2 devices attracted attention as computing candidates, their performances due environment-induced perturbations carrier dynamics and formation of defect states. explores integration hydrocarbon (HC) layers onto active channels enhance characteristics. HC were employed proposed field-effect transistor facilitate stable optoelectrical control over channel under high-power stimulation. The improved electrical performance, stability, synaptic behaviors HC-capped compared uncapped counterparts experimentally demonstrated. combination optical tuning allowed for in-sensor applications that mimic human sensory behaviors. impact passivation performance was evaluated, its potential with high stability demonstrated across wide-ranging environmental conditions. unique capabilities examining spike duration-dependent plasticity spiking timing-dependent plasticity. Thus, approach offers a promising avenue advancing technologies.

Язык: Английский

---

Solution-processed organic/inorganic heterojunction synaptic transistor for neuromorphic computing

Journal of Physics D Applied Physics, Год журнала: 2025, Номер 58(13), С. 135110 - 135110

Опубликована: Янв. 24, 2025

Abstract Artificial synaptic devices are the hardware foundation of modern computing systems which have shown great potential in overcoming bottleneck traditional von-Neumann architectures. Organic transistors garnered considerable attention due to their merits, such as low cost, weight, and mechanical flexibility. Various materials utilized for charge-capture layer organic transistors. Indium gallium zinc oxide (IGZO) is a typical metal semiconductor with wide bandgap, high carrier mobility, stable characteristics. Moreover, IGZO an n-type lower highest occupied molecular orbital (HOMO) lowest unoccupied (LUMO) energy level compared p-type semiconductor, has capture material fabricate high-performance devices. However, application trapping received limited attention. Consequently, transistor based on organic/inorganic heterojunction was developed. The impact program/erase time memory performance investigated, revealing that window ratio increased write/erase extended. Additionally, behavior were successfully emulated, including excitatory/inhibitory postsynaptic current, paired-pulse facilitation, depression, high-pass filtering characteristics, transformation short-term plasticity long-term plasticity. Notably, inorganic–organic bilayer achieved recognition accuracy 89.2% using Modified National Institute Standards Technology dataset handwritten digit training. This study provides facile route fabricating transistors, paving way development advanced brain-like computers.

Язык: Английский

---

Reconfigurable Dual‐Gate Ferroelectric Field‐Effect Transistors Based on Semiconducting Polymer for Logic Operations and Synaptic Applications

SmartMat, Год журнала: 2025, Номер 6(2)

Опубликована: Март 5, 2025

ABSTRACT Organic field‐effect transistors (OFETs), with their potential for low‐cost manufacturing and compatibility flexible substrates, have emerged as an indispensable element in next‐generation electronics. However, the existing OFETs are significantly hindered by lack of reconfigurability multifunctionality application complex electronic systems. To address these limitations, we propose a novel design strategy to develop dual‐gate organic transistor (DG‐OFET), primarily featuring synergistic combination interface charge trapping nonvolatile nature ferroelectric polarization, which realizes multifunctional integration within single platform. Specifically, DG‐OFET can be utilized synaptic devices that successfully perform both short‐term long‐term plasticity manipulating input gate artificial pulse voltages, depending on switching mechanism between bottom‐gate controlled electrostatic doping top‐gate induced polarization. Besides, presynaptic spike applied specific electrode trigger excitatory inhibitory postsynaptic current response. The potentiation depression weight mimicked consecutive positive negative spikes, respectively. coupling further expands its functionality towards simulating operation logic gates. By modulating signals, channel conductivity analogously family elementary Boolean operations, including AND, OR, NAND, NOR, XOR, XNOR. These results highlight tremendous applications energy‐efficient neuromorphic computing networks circuits, thus providing versatile development advanced efficient integration.

Язык: Английский

---

Engineering of A-Site Cations in APbI3 (A = Cs, Rb, K) Perovskites for Resistive Switching Control and Self-Rectifying Memristors for Next-Generation Computing Applications

Nano Energy, Год журнала: 2025, Номер unknown, С. 110871 - 110871

Опубликована: Март 1, 2025

Язык: Английский

---

Emulation of Synaptic Plasticity in WO₃‐Based Ion‐Gated Transistors

Advanced Electronic Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 20, 2025

Abstract Neuromorphic systems, inspired by the human brain, promise significant advancements in computational efficiency and power consumption integrating processing memory functions, thereby addressing von Neumann bottleneck. This paper explores synaptic plasticity of a WO 3 ‐based ion‐gated transistor () [EMIM][TFSI] 0.1 mol L −1 LiTFSI for neuromorphic computing applications. Cyclic voltammetry (CV), characteristics, atomic force microscopy (AFM) force–distance (FD) profiling analyses reveal that Li + brings about ion intercalation, together with higher mobility conductance, slower response time (τ). IGTs exhibit spike amplitude‐dependent (SADP), number‐dependent (SNDP), duration‐dependent (SDDP), frequency‐dependent (FDP), paired‐pulse facilitation (PPF), which are all crucial mimicking biological functions understanding how to achieve different types same IGT. The findings underscore importance selecting appropriate ionic medium optimize performance transistors, enabling development systems capable adaptive learning real‐time processing, essential applications artificial intelligence (AI).

Язык: Английский

---

Bioinspired Electrolyte-Gated Organic Synaptic Transistors: From Fundamental Requirements to Applications

Nano-Micro Letters, Год журнала: 2025, Номер 17(1)

Опубликована: Март 24, 2025

Abstract Rapid development of artificial intelligence requires the implementation hardware systems with bioinspired parallel information processing and presentation energy efficiency. Electrolyte-gated organic transistors (EGOTs) offer significant advantages as neuromorphic devices due to their ultra-low operation voltages, minimal hardwired connectivity, similar environment electrophysiology. Meanwhile, ionic–electronic coupling relatively low elastic moduli channel materials make EGOTs suitable for interfacing biology. This review presents an overview device architectures based on electrochemical field-effect transistors. Furthermore, we requirements consumption tunable synaptic plasticity in emulating biological synapses how they are affected by materials, electrolyte, architecture, mechanism. In addition, summarize basic principle sensory recent progress a building block systems. Finally, current challenges future discussed.

Язык: Английский

---

All-Optical Synapses Enabled by Photochromic Materials for High-Accuracy Optical Signal Recognition

ACS Photonics, Год журнала: 2025, Номер unknown

Опубликована: Апрель 8, 2025

Язык: Английский

---

Photonic synapse based on CsPbBr3@ZnO composite material for neuromorphic functions

Vacuum, Год журнала: 2025, Номер unknown, С. 114333 - 114333

Опубликована: Апрель 1, 2025

Язык: Английский

---

Low-Power Memristor for Neuromorphic Computing: From Materials to Applications

Nano-Micro Letters, Год журнала: 2025, Номер 17(1)

Опубликована: Апрель 14, 2025

Abstract As an emerging memory device, memristor shows great potential in neuromorphic computing applications due to its advantage of low power consumption. This review paper focuses on the application low-power-based memristors various aspects. The concept and structure devices are introduced. selection functional materials for low-power is discussed, including ion transport materials, phase change magnetoresistive ferroelectric materials. Two common types arrays, 1T1R 1S1R crossbar arrays introduced, physical diagrams edge chips discussed detail. Potential advanced multi-value storage, digital logic gates, analogue summarized. Furthermore, future challenges outlook based deeply discussed.

Язык: Английский

---