A review on application of nanomaterials in flexible pressure sensors
Materials Today Nano,
Год журнала:
2025,
Номер
unknown, С. 100627 - 100627
Опубликована: Апрель 1, 2025
Язык: Английский
Prospects of Band Structure Engineering in MXenes for Active Switching MXetronics: Computational Insights and Experimental Approaches
Materials,
Год журнала:
2024,
Номер
18(1), С. 104 - 104
Опубликована: Дек. 30, 2024
MXenes,
two-dimensional
(2D)
transition
metal
carbides
and
nitrides,
have
shown
promise
in
a
variety
of
applications.
The
use
MXenes
active
electronic
devices
is
restricted
to
electrode
materials
due
their
metallic
nature.
However,
can
be
modified
semiconducting
used
for
next-generation
channel
materials.
inherent
characteristics
pristine
M
Язык: Английский
Low power consumption of non-volatile memory device by tunneling process engineering
Solid-State Electronics,
Год журнала:
2025,
Номер
unknown, С. 109100 - 109100
Опубликована: Март 1, 2025
Язык: Английский
Giant charge trapping in 2D layered oxide nanosheets via intrinsic quantum wells
Journal of Material Science and Technology,
Год журнала:
2025,
Номер
unknown
Опубликована: Март 1, 2025
Язык: Английский
Advancements in fabrication, polymorph diversity, heterostructure excitation dynamics, and multifunctional applications of leading 2D TMDs
Journal of Industrial and Engineering Chemistry,
Год журнала:
2025,
Номер
unknown
Опубликована: Апрель 1, 2025
Язык: Английский
High-Performance Negative Capacitance Field-Effect Transistors with Synthetic Monolayer MoS2
ACS Nano,
Год журнала:
2025,
Номер
unknown
Опубликована: Май 2, 2025
Although
negative
capacitance
field-effect
transistors
(NCFETs)
have
been
extensively
studied
to
overcome
the
fundamental
Boltzmann
limit,
many
prior
reports
on
sub-60
mV/dec
subthreshold
swings
(SS)
suffer
from
inadequate
data
ranges,
measurements
near
noise
floor,
and
a
lack
of
robust
device
simulations,
raising
questions
about
true
efficacy
NCFETs.
Moreover,
recent
efforts
with
MoS2
channels
frequently
relied
mechanically
exfoliated
flakes,
limiting
uniformity
scalability.
Here,
we
present
an
NCFET
that
employs
synthetic
monolayer
channel
ferroelectric
hafnium
zirconium
oxide
layer
in
gate
stack
integrated
indium
metal
contacts.
We
achieve
clearly
substantiated
subthermionic
SS
(∼55
mV/dec)
across
more
than
two
decades
drain
current,
supported
by
theoretical
modeling
incorporates
interface
trap
density.
Additionally,
drain-induced
barrier
lowering
(DIBL)-induced
threshold
voltage
shift,
hallmark
NCFETs,
is
distinctly
observed.
Compared
existing
2D
van
der
Waals
(vdW)
NCFETs
rely
material,
our
approach
demonstrates
reliable
reproducible
low-voltage
operation,
underlining
its
potential
for
large-area
integration.
further
confirm
reducing
source/drain
contact
resistance
(achieved
contacts)
vital
successful
implementation
vdW
Язык: Английский
Two-Dimensional Materials, the Ultimate Solution for Future Electronics and Very-Large-Scale Integrated Circuits
Nano-Micro Letters,
Год журнала:
2025,
Номер
17(1)
Опубликована: Май 13, 2025
Abstract
The
relentless
down-scaling
of
electronics
grands
the
modern
integrated
circuits
(ICs)
with
high
speed,
low
power
dissipation
and
cost,
fulfilling
diverse
demands
life.
Whereas,
semiconductor
industry
entering
into
sub-10
nm
technology
nodes,
degrading
device
performance
increasing
consumption
give
rise
to
insurmountable
roadblocks
confronted
by
ICs
that
need
be
conquered
sustain
Moore
law’s
Bulk
semiconductors
like
prevalent
Si
are
plagued
seriously
degraded
carrier
mobility
as
thickness
thinning
down
sub-5
nm,
which
is
imperative
maintain
sufficient
gate
electrostatic
controllability
combat
increasingly
short
channel
effects.
Nowadays,
emergence
two-dimensional
(2D)
materials
opens
up
new
gateway
eschew
hurdles
laid
in
front
scaling
trend
IC,
mainly
ascribed
their
ultimately
atomic
thickness,
capability
down,
dangling-bonds
free
surface,
wide
bandgaps
tunability
feasibility
constitute
heterostructures.
Blossoming
breakthroughs
discrete
electronic
device,
such
contact
engineering,
dielectric
integration
vigorous
channel-length
scaling,
or
large
arrays,
boosted
yields,
improved
variations
full-functioned
processor
fabrication,
based
on
2D
have
been
achieved
nowadays,
facilitating
step
under
spotlight
IC
treated
most
potential
future
successor
complementary
counterpart
incumbent
further
IC.
Язык: Английский
High-throughput computational screening of novel MA2Z4-type Janus structures with excellent photovoltaic and photocatalytic properties
Journal of Materials Chemistry A,
Год журнала:
2024,
Номер
unknown
Опубликована: Янв. 1, 2024
The
H-
and
T-phases
of
MA
2
Z
4
structures,
elemental
composition
high-throughput
screening
process.
Язык: Английский