Journal of the American Chemical Society, Год журнала: 2025, Номер unknown

Опубликована: Май 16, 2025

Two-dimensional (2D) tin (Sn2+)-based perovskites have emerged as promising p-type semiconducting materials for (opto)electronic devices due to their favorable balance of electrical performance and structural stability. While previous studies on 2D predominantly investigated Ruddlesden-Popper (RP) with monoammonium spacers, Dion-Jacobson (DJ) diammonium spacers recently sparked attention in the research community. The strong hydrogen bonds at both ends spacer, connecting neighboring inorganic octahedral layers, promote stability efficient charge transport DJ perovskites. This study systematically investigates a series Sn2+ perovskites, [H3N-(CH2)m-(NH)3SnI4] (m = 3-8), explore influence from length spacer chains lattice structures, film crystallinity, properties. Our findings reveal that even-numbered 4, 6, 8) exhibit well-ordered layered whereas those odd-numbered 3, 5, 7) disrupt formation structures. Furthermore, we precursor stoichiometry can govern phase evolution along role parity. Among 1,4-butanediammonium iodide (BDASnI4, m 4) exhibits optimal superior Moreover, introduction an additional self-assembly monolayer ([2-(3,6-diiodo-9H-carbazol-9-yl)ethyl]phosphonic acid, I-2PACz) between dielectric channel layers further enhances interface quality reduces trap density. optimized transistor significantly reduced hysteresis boosted field-effect mobility up 1.45 cm2 V-1 s-1.

Язык: Английский