Optics Express,
Год журнала:
2024,
Номер
33(2), С. 1969 - 1969
Опубликована: Дек. 26, 2024
We
report
a
high
peak
power
mid-infrared
(MIR)
source
via
efficient
optical
parametric
generation
(OPG)
in
piece
of
50-mm-long
MgO:
PPLN
crystal
pumped
by
using
near-infrared
(NIR)
narrow-band
picosecond
laser
source.
The
highest
the
idler
pulse
can
reach
∼109.86
kW
with
duration
∼7.3
ps
and
wavelength
∼2924
nm.
Both
signal
pulses
be
agilely
tunable
repetition
rate,
from
500
kHz
to
4
MHz,
depending
on
pump
pulses.
Through
adjusting
operation
temperature
switching
applied
grating
crystal,
emission
wavelengths
broadband-tunable
across
NIR
range
1430-1741nm
MIR
2773-4156
nm,
respectively.
root-mean-square
errors
delivered
average
are
less
than
1%
for
all
operational
parameters.
Our
result
provides
simplified
yet
agile
solution
coherent
featuring
power,
customizable
wavelength,
exceptional
stability,
etc.
Laser & Photonics Review,
Год журнала:
2024,
Номер
18(11)
Опубликована: Июль 2, 2024
Abstract
Using
lasers
to
achieve
controlled
crystallographic
phase
changes
in
silicon
with
high
spatial
precision
promises
new
manufacturing
solutions
semiconductor
technologies,
including
photonics.
Recent
demonstrations
of
improved
amorphization
thicknesses
position
ultrafast
as
an
optimum
tool
meet
current
challenges.
Here,
the
literature
on
transformations
is
reviewed
and
complemented
experimental
data.
This
includes
ablation
response
a
function
pulse
duration
(
τ
=
13.9
134
fs
at
λ
800
nm)
laser
wavelength
258
4000
nm
200
pulses).
For
duration‐dependent
studies
Si(111),
fluence
threshold
decreases
shorter
durations,
emphasizing
significance
non‐linear
absorption
range
considered
conditions.
wavelength‐dependent
studies,
increases
sharply
from
1030
nm,
followed
by
near‐constant
behavior
up
3000
nm.
Conversely,
these
specified
ranges.
Differences
obtained
Si(111)
Si(100)
are
also
discussed,
identifying
anomalously
large
for
Finally,
question
lateral
resolution,
shown
independent
interaction
nonlinearity
addressed.
Applied Physics Letters,
Год журнала:
2023,
Номер
122(4)
Опубликована: Янв. 23, 2023
The
employment
of
ultrashort
laser
sources
at
the
mid-infrared
(mid-IR)
spectral
region
for
dielectrics
is
expected
to
open
innovative
routes
patterning
and
a
wealth
exciting
applications
in
optics
photonics.
To
elucidate
material
response
irradiation
with
mid-IR
sources,
consistent
analysis
interaction
long
wavelength
femtosecond
pulses
dielectric
materials
presented.
influence
pulse
duration
particularly
emphasized
specifying
parameters
which
photoionization
impact
ionization
are
important.
Simulation
results
using
2.2,
3.2,
5
μm
conducted
illustrate
optimum
conditions
onset
damage
on
solid
that
related
occurrence
optical
breakdown.
predict
threshold
scales
as
∼τpa
(0.31≤a≤0.37)
all
wavelengths.
Given
significant
effect
induced
excitation
level
surface
plasmons
(SPs),
account
formation
laser-induced
periodic
structures
oriented
perpendicular
polarization,
correlation
produced
electron
densities
SPs
SP
(∼τpβ,
0.33≤β≤0.39)
also
discussed
this
yet
unexplored
region.
guide
development
an
approach
strong
advanced
applications.
Laser & Photonics Review,
Год журнала:
2024,
Номер
18(10)
Опубликована: Май 16, 2024
Abstract
Pulsed
solid‐state
lasers
comprise
2D
materials
as
saturable
absorbers
that
contain
transparent
windows
of
the
atmosphere
and
characteristic
fingerprint
spectra
several
vital
molecules
are
significant
in
various
applications
research.
Over
past
few
decades,
progress
has
been
made
development
narrow
pulse
width,
high
energy,
average
output
power,
efficiency,
simple
construction
passively
Q‐switched
mode‐locked
with
absorbers.
This
review
summarizes
materials,
including
graphene,
transition
metal
dichalcogenides,
black
phosphorus,
topological
insulators,
MXenes,
modulator
devices
for
owing
to
their
broadband
operation,
excellent
nonlinear
optical
response,
low
recovery
time,
ultrafast
dynamic
processing,
easy
fabrication.
Then,
some
new
emerging
representative
pulsed
introduced
illustrated
such
laser
surgery,
material
lidar.
Finally,
future
challenges
perspectives
materials‐based
analyzed
addressed.
The
rapid
continuous
improvement
modulation
technology
is
expected
expand
opportunities
application
industry,
scientific,
medical,
other
areas.
Physical review. B./Physical review. B,
Год журнала:
2024,
Номер
109(18)
Опубликована: Май 30, 2024
A
key
issue
in
the
use
of
high-power
mid-infrared
(mid-IR)
laser
sources
for
a
plethora
applications
is
investigation
exciting
laser-driven
physical
phenomena
taking
place
materials
coated
with
dielectric
films.
Here,
we
present
theoretical
ultrafast
processes
and
thermal
response
upon
excitation
two-layered
complexes
consisting
fused
silica
thin
films
placed
on
silicon
substrates
ultrashort
pulsed
lasers
mid-IR
spectral
regime.
Through
development
model,
demonstrate
that
control
underlying
damage
threshold
(DT)
substrate
are
achieved
via
an
appropriate
modulation
thickness
${\mathrm{SiO}}_{2}$
film.
It
shown
decrease
DT
by
up
to
\ensuremath{\sim}30%
compared
absence
coating
feasible,
emphasizing
impact
coatings
lower
refractive
index
than
substrate.
The
conditions
surface
plasmon
(SP)
interface
between
Si
influence
film
SP
features
also
discussed
as
such
electromagnetic
modes
can
initiate
structuring
interface.
Our
results
manifested
striking
presence
characteristics.
be
tailored
changing
superstrate
which
determines
competition
air
These
remarkable
predictions
employed
optical
components
nonlinear
optics
photonics
large
range
laser-based
applications.
Irradiation
of
solids
with
ultrashort
pulses
using
laser
sources
in
the
mid-infrared
(mid-IR)
spectral
region
is
a
yet
predominantly
unexplored
field
that
opens
broad
possibilities
for
efficient
and
precise
surface
texturing
wide
range
applications.
In
present
work,
we
investigate
both
experimentally
theoretically
impact
on
generation
modification
related
effects
subsequent
patterning
metallic
semiconducting
materials.
Through
parametric
study
correlate
mid-IR
pulsed
parameters
onset
material
damage
formation
variety
periodic
structures
at
wavelength
$\lambda_{L}=3200$
nm
pulse
duration
xmlns:xlink="http://www.w3.org/1999/xlink">$\tau_{p}=45$
fs.
Results
nickel
silicon
indicate
produced
topographies
comprise
high
low
spatial
frequency
induced
structures,
similar
to
those
observed
lower
wavelengths,
while
groove
absent
(Fig.
1a,b).
The
investigation
thresholds
suggests
incorporation
nonlinear
generated
from
three-photon-assisted
excitation
(for
silicon)
1c)
consideration
role
non-thermal
excited
electron
population
nickel)
very
short
durations
1d).
results
demonstrate
potential
structuring
pulses,
which
can
constitute
systematic
novel
engineering
approach
strong
fields
long-wavelength
regions
be
used
advanced
industrial
applications
[1].