Chemiresistive Sensor Based on Sn-Doped β-Ga2O3 Nanorods for the Selective Detection of Formaldehyde DOI
Soumen Giri, Bidesh Mahata,

B. Mondal

и другие.

ACS Applied Nano Materials, Год журнала: 2024, Номер unknown

Опубликована: Дек. 16, 2024

This study proposes an approach utilizing a low-cost precipitation technique to synthesize undoped and Sn-doped β-Ga2O3 materials for the detection of volatile organic compounds (VOCs), viz., isopropanol, formaldehyde, acetone, toluene, ethanol. It is found from field emission secondary electron spectroscopy that nanorod-like structures are grown, while X-ray diffraction data shows β-phase Ga2O3 obtained. was also observed remains monoclinic upon 5 wt % Sn doping; however, SnO2 phase formed when doping increased 5.3 %. Several spectroscopic techniques, such as Raman spectroscopy, photoelectron ultraviolet UV–vis–NIR were used understand structure–property correlations. established carrier concentration in β-Ga2O3, doping, plays crucial role VOC sensing, evident Hall measurements. both nanorod-based chemiresistive sensor devices highly selective formaldehyde. A maximum response 333.35% achieved with formaldehyde at 300 °C ppm, which significantly higher than other doped samples. Interestingly, above forms heterojunction β-Ga2O3; thereby, effective reduced even if dopant (Sn) high, making device low. The phenomenon explained on basis band diagrams correlated concentrations

Язык: Английский

Enhancing the electronic and optical properties of β-Ga2O3: effects of B-, N-, and B-N doping DOI

Jiaxin Zhu,

Yong Pan,

Ming Wen

и другие.

Journal of Alloys and Compounds, Год журнала: 2025, Номер unknown, С. 178426 - 178426

Опубликована: Янв. 1, 2025

Язык: Английский

Процитировано

12
Hollow-Sphere NiO/Ti3C2Tx-Based Gas Sensor for CO Sensing DOI
Yong Zhang,

Haotian Xiong,

Qingdong Chen

и другие.

ACS Applied Nano Materials, Год журнала: 2025, Номер unknown

Опубликована: Фев. 24, 2025

Язык: Английский

Процитировано

0
High-performance formaldehyde gas sensors based on Au/Pd bimetal decorated β-Ga2O3 nanorods DOI

Hongchao Zhai,

Chenxing Liu,

Yushi Wang

и другие.

Journal of Alloys and Compounds, Год журнала: 2025, Номер unknown, С. 179940 - 179940

Опубликована: Март 1, 2025

Язык: Английский

Процитировано

0
Co-Doping Effects on the Electronic and Optical Properties of β-Ga2O3: A First-Principles Investigation DOI Open Access

Ya-Rui Wang,

Suzhen Luan

Materials, Год журнала: 2025, Номер 18(9), С. 2005 - 2005

Опубликована: Апрель 28, 2025

To meet the demands for functional layers in inverted flexible perovskite solar cells, high-performance formamidinium-based and photodetectors future applications, it is crucial to appropriately reduce bandgap of third-generation wide-bandgap semiconductor materials. In this study, we first optimized doping sites through Ag-Cl Ag-S configurations establish stable substitution patterns, followed by density theory (DFT) calculations using Generalized Gradient Approximation with Perdew-Burke-Ernzerhof (GGA-PBE) functional, implemented Vienna Ab initio Simulation Package (VASP). A plane-wave basis set a cutoff energy 450 eV 3 × 4 Γ-centered k-mesh were adopted investigate effects Mg-Cl, Mg-S, Zn-Cl, Zn-S co-doping on structural stability, electronic properties, optical characteristics β-Ga2O3. Based symmetry, six considered, Ag-S/Cl systems revealing preferential occupation at octahedral Ga(1) site formation analysis. The results demonstrate that co-doped exhibit thermodynamic stability. pristine β-Ga2O3 was calculated be 2.08 eV. Notably, Zn-Cl achieves lowest reduction 1.81 Importantly, all configurations, including Zn-S, effectively Furthermore, show enhanced visible light absorption (30% increase 500 nm) improved storage performance compared material.

Язык: Английский

Процитировано

0
Comprehensive study of β-Ga2O3 epitaxial growth using a variable closed-coupled showerhead MOCVD reactor DOI
Aadil Waseem, Gavin Latham,

C. McAleese

и другие.

Applied Physics Reviews, Год журнала: 2025, Номер 12(2)

Опубликована: Май 13, 2025

β-Ga2O3 is a highly promising ultrawide bandgap semiconductor material that poised to transform the high-power electronics field. The manufacturability of device quality epitaxial films at scale urgently needed. Using production-ready closed-coupled showerhead MOCVD reactor with in situ reflectance monitoring, this study presents detailed investigation impact growth parameters on both (010) and (001) oriented native substrates, as well c-plane sapphire substrates 0°–8° off-axis orientations. By tuning showerhead–susceptor gap mapping other parameters, including annealing, nucleation, temperature, pressure, substrate orientation, we achieved state-of-the-art crystal quality, extraordinary wafer-level thickness uniformity <1% variation for 2-in. 4-in. rates high 7.2 μm/h. All was performed using TMGa pure O2 precursors N2 carrier gas instead more widely used argon; no detectable nitrogen carbon incorporation observed by secondary ion mass spectrometry. For homoepitaxy Si-doped room temperature Hall mobility 148 cm2/V s concentration 1.26 × 1017 cm−3, rate 2.6 heteroepitaxy sapphire, exhibited enhanced crystallinity, shown continued reduction x-ray diffraction rocking curve full width half maximum from 2834 1300 arcsec 0° 8° offcut respectively. results demonstrate scalability potential advantages design manufacturing-scale offer new insights into controllability uniform high-quality power applications.

Язык: Английский

Процитировано

0
Ga-SrTiO3 Modified by CuCrO /Co3O4 Dual Cocatalyst for Efficient Photocatalytic Overall Water Splitting DOI

Yiquan Zhan,

S.K. Lai, Junzhe Jiang

и другие.

Applied Catalysis A General, Год журнала: 2025, Номер unknown, С. 120373 - 120373

Опубликована: Май 1, 2025

Язык: Английский

Процитировано

0
Challenges and solutions in Mist-CVD of Ga2O3 heteroepitaxial films DOI
Roman Yatskiv, Roman Yatskiv, Ondřej Černohorský

и другие.

Materials Science in Semiconductor Processing, Год журнала: 2024, Номер 186, С. 109063 - 109063

Опубликована: Ноя. 1, 2024

Язык: Английский

Процитировано

2
Chemiresistive Sensor Based on Sn-Doped β-Ga2O3 Nanorods for the Selective Detection of Formaldehyde DOI
Soumen Giri, Bidesh Mahata,

B. Mondal

и другие.

ACS Applied Nano Materials, Год журнала: 2024, Номер unknown

Опубликована: Дек. 16, 2024

This study proposes an approach utilizing a low-cost precipitation technique to synthesize undoped and Sn-doped β-Ga2O3 materials for the detection of volatile organic compounds (VOCs), viz., isopropanol, formaldehyde, acetone, toluene, ethanol. It is found from field emission secondary electron spectroscopy that nanorod-like structures are grown, while X-ray diffraction data shows β-phase Ga2O3 obtained. was also observed remains monoclinic upon 5 wt % Sn doping; however, SnO2 phase formed when doping increased 5.3 %. Several spectroscopic techniques, such as Raman spectroscopy, photoelectron ultraviolet UV–vis–NIR were used understand structure–property correlations. established carrier concentration in β-Ga2O3, doping, plays crucial role VOC sensing, evident Hall measurements. both nanorod-based chemiresistive sensor devices highly selective formaldehyde. A maximum response 333.35% achieved with formaldehyde at 300 °C ppm, which significantly higher than other doped samples. Interestingly, above forms heterojunction β-Ga2O3; thereby, effective reduced even if dopant (Sn) high, making device low. The phenomenon explained on basis band diagrams correlated concentrations

Язык: Английский

Процитировано

1