Double-Oxidant-Induced Slurry Reaction Mechanism and Performance on Chemical Mechanical Polishing of 4H-SiC (0001) Wafer DOI
Xin Song, Boyu Hu, J. C. Guo

и другие.

Langmuir, Год журнала: 2024, Номер unknown

Опубликована: Дек. 6, 2024

Single-oxidant slurries are prevalently utilized in chemical and mechanical polishing (CMP) of 4H-SiC crystal. Nevertheless, it is a challenge to achieve high material removal rate (MRR) surface quality using single oxidant meet the needs global planarization damage-free nanoscale processing SiC wafers. To solve this challenge, novel method proposed for CMP double slurry. This slurry mainly consists alumina (Al

Язык: Английский

A novel liquid film shearing polishing technique for silicon carbide and its processing damage mechanisms DOI
Hongyu Chen,

Hongbing Wan,

Binbin Hong

и другие.

Applied Surface Science, Год журнала: 2025, Номер 688, С. 162317 - 162317

Опубликована: Янв. 7, 2025

Язык: Английский

Процитировано

11

Investigation of Fenton-electrochemical oxidation behavior and polishing mechanism of SiC DOI

Hyeok-Joong Kang,

Min Zhong, Xiaobing Li

и другие.

Precision Engineering, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

Язык: Английский

Процитировано

3

Review on chemical mechanical polishing for atomic surfaces using advanced rare earth abrasives DOI

X. Chen,

Zhenyu Zhang,

Feng Zhao

и другие.

Journal of Physics D Applied Physics, Год журнала: 2024, Номер 58(2), С. 023004 - 023004

Опубликована: Окт. 8, 2024

Abstract During the past decades, high-performance devices and setups have been widely used in fields of precision optics, semiconductors, microelectronics, biomedicine, optoelectronics aerospace. It is a challenge to achieve ultralow surface roughness free damages. Due unique physicochemical properties rare earths, ceria has garnered great progresses for atomic surfaces induced by chemical mechanical polishing. Compared with conventional removal alumina silica, earth abrasives selective material on via their special activity, without introducing microscopic scratches defects. Nevertheless, polishing performance depends series factors, e.g. size abrasive particles, microscale topological structure, configuration slurry, auxiliary energy etc. As result, it significant conduct comprehensive review understand state-of-the-art technologies. This summarizes effect slurries composed different under conditions. Additionally, various energy-assisted strategies are discussed using diverse kinds distinct forms. Finally, future directions addressed.

Язык: Английский

Процитировано

7

Atomistic mechanisms of SiC electrochemical mechanical polishing in aqueous H2O2: A ReaxFF molecular dynamics study DOI
Rui Zhu, Tianyu Zhang,

Qingyu Yao

и другие.

Journal of Manufacturing Processes, Год журнала: 2025, Номер 136, С. 56 - 67

Опубликована: Янв. 26, 2025

Язык: Английский

Процитировано

1

Electric-field-modulated oxidation and its effect on photoelectrochemical mechanical polishing of 4H-SiC DOI
Yang Zhao, Shang Gao,

Yuewen Sun

и другие.

International Journal of Mechanical Sciences, Год журнала: 2025, Номер unknown, С. 110247 - 110247

Опубликована: Апрель 1, 2025

Язык: Английский

Процитировано

1

Soft Copper Nanoimprinting via Solid-State Electrochemical Etching for Flexible Optoelectronics DOI

Atsuki Tsuji,

Taizo Kobayashi,

Junji Murata

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Фев. 27, 2025

Patterned Cu is widely used for various electronic components, including metal interconnects. In the optoelectronic industry, high-resolution nanopatterning of surfaces commonly performed via photolithography, which requires photoresists and harsh chemicals. this study, we developed a method fabricating nanopatterns based on solid-state electrochemical etching at interface between polymer electrolyte membrane (PEM) Cu. The reaction selectively ionized surface in contact with patterned PEM stamp, allowing direct patterning without using resists or This approach was successfully applied to produce patterns resolutions less than 100 nm hierarchical structures. Such subwavelength scale (several hundred nanometers) enable miniaturization electrical circuits tuning optical transmission/reflection spectra enhance device surfaces. Semitransparent electrodes fabricated nanopatterned poly(ethylene terephthalate) films exhibited good transmission resistance properties. proposed stamp-based technique avoids need liquid electrolytes resists, thereby offering simple, low-cost, environmentally friendly process

Язык: Английский

Процитировано

0

Achieving atomic surface of Ti-6Al-4V alloys in chemical mechanical planarization using phytic acid as corrosion inhibitor, chelator and pH adjuster DOI
Yuhan Chen,

Chun Cao,

Jianting Liu

и другие.

Colloids and Surfaces A Physicochemical and Engineering Aspects, Год журнала: 2025, Номер 718, С. 136914 - 136914

Опубликована: Апрель 14, 2025

Язык: Английский

Процитировано

0

Effect of Voltage on Electrochemical Mechanical Polishing (ECMP) of 4H-SiC with Fixed Abrasives DOI Creative Commons
Pengfei Wu, Dongdong Zhao,

Ning Liu

и другие.

Journal of Materials Research and Technology, Год журнала: 2025, Номер 36, С. 7807 - 7817

Опубликована: Май 1, 2025

Язык: Английский

Процитировано

0

Cavitation-assisted Abrasive Composite Polishing: Current Status and Future Prospects DOI
Yang Li,

Ziang Lu,

Fuzhu Li

и другие.

International Journal of Precision Engineering and Manufacturing, Год журнала: 2025, Номер unknown

Опубликована: Май 15, 2025

Язык: Английский

Процитировано

0

Insight into the atomic-scale material removal of 4H-SiC electrochemical mechanical polishing (ECMP) using graphene oxide DOI
Zirui Wang,

Yuguang Zhu,

Ronghao Ren

и другие.

Tribology International, Год журнала: 2025, Номер unknown, С. 110803 - 110803

Опубликована: Май 1, 2025

Язык: Английский

Процитировано

0