Engineering Titanium Dioxide/Titanocene-Polysulfide Interface for Flexible, Optical-Modulated, and Thermal-Tolerant Multilevel Memristor

Nano Letters, Год журнала: 2025, Номер unknown

Опубликована: Фев. 7, 2025

Multifunctional memristors with a high memory density, low power consumption, flexibility, programmability, and environmental robustness are essential for next-generation memories. In this work, titanocene-polysulfide complex (Cp2TiS5) strong S···S interactions hydrogen bonds was synthesized integrated TiO2 to create novel Cu/TiO2/Cp2TiS5/Ag memristor. This device shows bipolar nonvolatile performance remarkable ON/OFF ratio (104.8), switching voltages (VSET, -0.16 V; VRESET, +0.15 V), consumption (2.7 × 10-4 μW). It exhibits multilevel behavior, optical modulation (VSET decreases from -1.35 -0.17 V decreasing irradiation wavelength), thermal tolerance (up 200 °C). The electron-rich Cp2TiS5 layer protects the Ag-CFs, while TiO2's oxygen vacancies unsaturated Ti atoms interact sulfur Cp2TiS5, lowering Schottky barrier facilitating charge transport. work offers promising opportunities in flexible memristive devices neuromorphic computing under extreme conditions.

Язык: Английский

Layered lead-free perovskite memristors with ultrahigh on/off ratio

Applied Surface Science, Год журнала: 2025, Номер unknown, С. 163317 - 163317

Опубликована: Апрель 1, 2025

Язык: Английский