Lead-free dielectric thin films: Synthesis of Ag(Nb1−xTax)O3 via reactive dc magnetron sputtering DOI
L. Kölbl,

M. Mehrabi,

Thomas Grießer

и другие.

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Год журнала: 2024, Номер 43(1)

Опубликована: Дек. 6, 2024

Growing environmental concerns have driven the switch from lead-containing dielectric perovskite ceramics to lead-free alternatives such as silver niobate tantalate [Ag(Nb1−xTax)O3], where tantalum (Ta) substitution for niobium (Nb) enhances energy-storage density. Thin film deposition presents a promising way fabricating these materials use in capacitors. In this study, Ag(Nb1−xTax)O3 (0 ≤ x 0.5) thin films are synthesized via combinatorial reactive dc magnetron sputtering metallic targets. The chemical and phase compositions of comprehensively analyzed using scanning electron microscopy coupled with energy dispersive x-ray spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectrometry, diffraction, Raman photoelectron spectroscopy. findings demonstrate that is feasible technique producing complex oxide customized composition microstructure. By enhancing understanding material system, study aims contribute development environmentally benign high-performance dielectrics could replace lead-based applications.

Язык: Английский

Energy Storage Performance of (Na0.5Bi0.5)TiO3 Relaxor Ferroelectric Film DOI Open Access

Xuxia Liu,

Yao Yao, Xiaofei Wang

и другие.

Coatings, Год журнала: 2024, Номер 14(7), С. 801 - 801

Опубликована: Июнь 27, 2024

The (Na0.5Bi0.5)TiO3 relaxor ferroelectric materials have great potential in high energy storage capacitors due to their small hysteresis, low remanent polarization and breakdown electric field. In this work, thin films with ~400 nm were prepared on (001) SrTiO3 substrate by pulsed laser deposition technology. good crystallization quality a dense microstructure properties, as confirmed the elongated hysteresis loops relation of <A>∝Eα. A Eb up 1400 kV/cm is obtained, which contributes Wrec 24.6 J/cm3 η 72% film. addition, variations are less than 4% 10% temperature range 20–120°C. frequency 103 Hz–2 × 104 Hz, 10%. All those reveal NBT film for storage.

Язык: Английский

Процитировано

4
Structural and photoluminescence properties of SrNb2O6: RE3+ (RE = Sm, Tb) phosphors for solid state lighting DOI

Dixi Ke,

Gen Li, Min Zeng

и другие.

Ceramics International, Год журнала: 2024, Номер 50(20), С. 39175 - 39185

Опубликована: Июль 20, 2024

Язык: Английский

Процитировано

4
Controllability of Optical, Electrical, and Magnetic Properties of Synthesized Cd-Doped MgFe2O4 Nanostructure DOI
Shehab E. Ali,

Asmaa A. Marzouk,

H. Abdel-Khalek

и другие.

Journal of Alloys and Compounds, Год журнала: 2024, Номер 1010, С. 177451 - 177451

Опубликована: Ноя. 7, 2024

Язык: Английский

Процитировано

2
Enhanced energy storage performance in Ag(Nb,Ta)O3 films via interface engineering DOI Creative Commons
Xiao Zhai, Jun Ouyang, Weijie Kuai

и другие.

Journal of Materiomics, Год журнала: 2024, Номер 11(2), С. 100895 - 100895

Опубликована: Июнь 7, 2024

Dielectric capacitors with ultrahigh power density and ultra-fast charge/discharge rate are highly desired in pulse fields. Environmental-friendly AgNbO3 family have been actively studied for its large polarization antiferroelectric nature, which greatly boost the electric energy storage performance. However, high-quality AgNbO3-based films difficult to fabricate, leading a low breakdown field Eb (<1.2 MV/cm) consequently arising inferior In this work, we propose an interface engineering strategy mitigate issue. A Ag(Nb,Ta)O3/BaTiO3 bilayer film is proposed, where BaTiO3 layer acts as p-type semiconductor while Ag(Nb,Ta)O3 n-type, together n-type LaNiO3 buffer on substrate, forming n-p-n heterostructure. The heterostructure elevates potential barriers charge transport, reducing leakage current. An extremely Eb∼4.3 MV/cm achieved, being highest value up date niobate system. high recoverable Wrec∼62.3 J/cm3 decent efficiency η∼72.3% obtained, much superior that of monolayer (Wrec∼46.4 η∼80.3% at Eb∼3.3 MV/cm). Our results indicate effective method performance dielectric capacitors.

Язык: Английский

Процитировано

1
Sputter deposited silver niobate thin films: Pathway towards phase purity DOI Creative Commons
L. Kölbl, Alexander M. Kobald, Thomas Grießer

и другие.

Thin Solid Films, Год журнала: 2024, Номер 804, С. 140505 - 140505

Опубликована: Авг. 22, 2024

Язык: Английский

Процитировано

1
Energy storage performance and dielectric tunability of AgNbO3 ferroelectric films DOI
Da Li, Yao Yao, Xiaofei Wang

и другие.

Journal of Alloys and Compounds, Год журнала: 2024, Номер 1010, С. 177518 - 177518

Опубликована: Ноя. 12, 2024

Язык: Английский

Процитировано

0
Lead-free dielectric thin films: Synthesis of Ag(Nb1−xTax)O3 via reactive dc magnetron sputtering DOI
L. Kölbl,

M. Mehrabi,

Thomas Grießer

и другие.

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Год журнала: 2024, Номер 43(1)

Опубликована: Дек. 6, 2024

Growing environmental concerns have driven the switch from lead-containing dielectric perovskite ceramics to lead-free alternatives such as silver niobate tantalate [Ag(Nb1−xTax)O3], where tantalum (Ta) substitution for niobium (Nb) enhances energy-storage density. Thin film deposition presents a promising way fabricating these materials use in capacitors. In this study, Ag(Nb1−xTax)O3 (0 ≤ x 0.5) thin films are synthesized via combinatorial reactive dc magnetron sputtering metallic targets. The chemical and phase compositions of comprehensively analyzed using scanning electron microscopy coupled with energy dispersive x-ray spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectrometry, diffraction, Raman photoelectron spectroscopy. findings demonstrate that is feasible technique producing complex oxide customized composition microstructure. By enhancing understanding material system, study aims contribute development environmentally benign high-performance dielectrics could replace lead-based applications.

Язык: Английский

Процитировано

0